SILICON PNP EPITAXIAL PLANAR TYPE SILICON NPN EPITAXIAL PLANAR TYPE SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. e Including Two Devices in US6 (Ultra Super Mini Type with 6 leads) e With Built-in Bias Resistors e Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process EQUIVALENT CIRCUIT AND BIAS RESISTOR VALUES Ql Cc Q2 c RI RI Rl: 4,.7k0 Bow Bow R2: 4,7k0 Re R23 (Q1, Q2 COMMON) E E Q1 MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL | RATING | UNIT Collector-Base Voltage VCBO 50 Vv Collector-Emitter Voltage VCEO 50 Vv Emitter-Base Voltage VEBO 10 Vv Collector Current Ic 100 mA Q2 MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL | RATING | UNIT Collector-Base Voltage VcBo 50 Vv Collector-Emitter Voltage VCEO 50 Vv Emitter-Base Voltage VEBO 10 v Collector Current Ic 100 mA Q1, Q2 COMMON MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL | RATING | UNIT Collector Power Dissipation Pc* 200 mW Junction Temperature Tj 150 C Storage Temperature Range Tstg 55~150 C * :Total Rating 997 RN4901 Unit in mm 2.IDUi 1.25+0.1 | al S 1 | 6 wo ret |e 3 sj2jelz] | fs *3 | fo 3 | 4 8 3 | gZ # a : iil 2 3 2 o 1. EMITTER1 (Et) 2. BASE 1 (B1) 3. COLLECTOR 2 (C2) 4. EMITTER 2 (52) 5. BASE 2 (B2) US6 6. COLLECTOR 1 (C1) JEDEC _ EIAJ TOSHIBA 2-2J1A Weight : 6.8mg MARKING 6 5 4 me VA So ee 1 2 8 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 Be Ql Q2 Bee 1 2 8RN4901 Q1 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT I VcB= 50V, Ip=0 _ | -100 Collector Cut-off Current CBO CB E nA IcKO VCE= 50V, Ip=0 _ | 500 Emitter Cut-off Current IzBO VEB= 10V, Ic =0 0.82 | |1.52| mA DC Current Gain hrp VcE= 5V, Ic=10mA 30} _ Collector-Emitter Saturation =_ = _ _ Al _ 3 Voltage VCE (sat) | Ic 5mA, Ip 0.25mA 0 0 Input Voltage (ON) VI(ON) | VcE=90.2V, IG=5mA -1i)/ | -20] V Input Voltage (OFF) VI(OFF)| VCE=5V, Ic=-0.1mA -10)/ | -15] V Transition Frequency fp VoE=-10V, IG=5mA _ 200 | MHz Collector Output Capacitance Cob VcBp=10V, Ip=0, f=1MHz| 3 6 | pF Q2 ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT I VcBp=50V, Ip=0 _ 100 Collector Cut-off Current CBO cB E nA Icko VcE=50V, Ip=0 _ _ 500 Emitter Cut-off Current IzkBo VEB=10V, Ic=0 0.82 | 1.52 | mA DC Current Gain hFE VcE=5V, Ic=10mA 30 | _ Collector-Emitter Saturation = =0.25mA _ 0.1 0.3 Voltage VCE (sat) | Ic=5mA, Ip =0.25 Input Voltage (ON) VI(ON) | Voce =0.2V, Ic=5mA 11) 2.0) V Input Voltage (OFF) VI(OFF)| VCE=5V, Ic=0.1mA 10); 15] V Transition Frequency fr VcE=10V, Ic=5mA 250 | | MHz Collector Output Capacitance Cob VcB=10V, In=0, f=1MHz _ 3 6 | pF Q1, Q2 COMMON ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Input Resistor R1 _ 3.29 4.7 | 611] ko Resistor Ratio R1/R2 _ 0.9 1.0 11 998Ql Ic VI(ON) -100 COMMON EMITTER -80! vop=0.2V -30 (mA) | bh o I on Ta= 100C COLLECTOR CURRENT Ic | | a eo -05 ~0.3 -0.1 -03 1 -3 -10 -30 ~100 INPUT VOLTAGE Vi(QN) (V) \ Ql Ic VI(OFF) COMMON EMITTER 2 -5000 3 Vce=-5V ~ 3000 2 BK Ta=100C Z -1000 cI a 5 -500 oO ~300 oO & Q 3 3-100 8 oO ~50 -30 -06 -08 -10 -12 -14 -16 -18 -20 INPUT VOLTAGE Vi(OFF) (V) Ql hrE - Ic 300 COMMON EMITTER a Vog=-5V Ta=100C & 100 z < So 50 & g @ 30 oe 5 oO QO a ~1 -3 COLLECTOR CURRENT Ic -10 30 100 (mA) 999 (mA} Ic COLLECTOR CURRENT (eA) COLLECTOR CURRENT Ic DC CURRENT GAIN hrg RN4901 Q2 Ic VI(ON) 100 COMMON EMITTER 50 | vog=0.2V 30 Ta=100C 0.5 0.3 0.1 0.3 1 3 10 30 100 INPUT VOLTAGE Vi(on) (V) Q2 Ic VIiCOFF) COMMON EMITTER VcE=5V 5000 3000 Ta=100C 1000 Qo a e 6 o 6 be 2 & a oO 9 of a 08 10 12 14 16 18 20 INPUT VOLTAGE V(oFF) () Q2 hFE - Ic 300 COMMON EMITTER VcE=5V 100 Ta=100C 50 30 10 1 3 10 30 100 COLLECTOR CURRENT Ic (mA)