PBHV9115X,115 - NXP - Pdf.Support

1. Product profile

1.1 General description

PNP high-voltage low VCEsat Breakthrou gh In Small Signal (BISS) transistor in a

SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

High voltage

Low collector-emitter saturation voltage VCEsat

High collector current capability IC and ICM

High collector current gain (hFE) at high IC

1.3 Applications

LED driver for LED chain module

LCD backlighting

Automotive motor management

Hook switch for wired telecom

Switch Mode Power Supply (SMPS)

1.4 Quick reference data

2. Pinning information

PBHV9115X

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

Rev. 01 — 10 March 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - −150 V

ICcollector current - - −1A

hFE DC current gain VCE =−10 V;

IC=−50 mA 100 220 -

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1emitter

2 collector

3base

321 sym07

Product data sheet Rev. 01 — 10 March 2010 2 of 13

NXP Semiconductors PBHV9115X

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

3. Ordering information

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.

Table 3. Ordering information

Type number Package

Name Description Version

PBHV9115X SC-62 plastic surface-mounted package; collector pad for good

heat transfer; 3 leads SOT89

Table 4. Marking codes

Type number Marking code[1]

PBHV9115X *4G

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - −200 V

VCEO collector-emitter voltage open base - −150 V

VCESM collector-emitter peak

voltage VBE =0V - −200 V

VEBO emitter-base voltage open collector - −6V

ICcollector current - −1A

ICM peak collector current single pulse;

tp≤1ms -−2A

IBM peak base current single pulse;

tp≤1ms -−400 mA

Ptot total power dissipation Tamb ≤25 °C[1] 520 mW

[2] 1.5 W

Tjjunction temperature - 150 °C

Tamb ambient temperature −55 +150 °C

Tstg storage temperature −65 +150 °C

Product data sheet Rev. 01 — 10 March 2010 3 of 13

NXP Semiconductors PBHV9115X

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, sing le-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2.

(1) FR4 PCB, mounting pad for collector 6 cm2

(2) FR4 PCB, standard footprint

Fig 1. Power derating curves

Tamb (°C)

−75 17512525 75−25

006aab846

0.8

1.2

0.4

1.6

2.0

Ptot

(W)

0.0

(2)

(1)

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1] - - 240 K/W

[2] --80K/W

Rth(j-sp) thermal resistance from

junction to solder point --20K/W

Product data sheet Rev. 01 — 10 March 2010 4 of 13

NXP Semiconductors PBHV9115X

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junctio n to ambient as a function of p ulse du ration; typical values

FR4 PCB, mounting pad for collector 6 cm 2

Fig 3. Transient thermal impedance from junctio n to ambient as a function of p ulse du ration; typical values

006aab847

102

103

Zth(j-a)

(K/W)

10−1

10−51010−2

10−4102

10−1

tp (s)

10−3103

duty cycle = 1

0.01

0.02

0.05

0.1

0.2

0.33

0.5

0.75

006aab848

102

103

Zth(j-a)

(K/W)

10−1

10−51010−2

10−4102

10−1

tp (s)

10−3103

duty cycle = 1

0.75

0.5 0.33

0.2

0.1

0.05

0.02

0.01

Product data sheet Rev. 01 — 10 March 2010 5 of 13

NXP Semiconductors PBHV9115X

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

7. Characteristics

[1] Pulse test: tp≤300 μs; δ≤0.02.

Table 7. Characteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base

cut-off current VCB =−120 V;

IE=0A --−100 nA

VCB =−120 V;

IE=0A; T

j= 150 °C--−10 μA

ICES collector-emitter

cut-off current VCE =−120 V;

VBE =0V --−100 nA

IEBO emitter-base

cut-off current VEB =−4V; I

C=0A - - −100 nA

hFE DC current gain VCE =−10 V

IC=−50 mA 100 220 -

IC=−100 mA [1] 100 220 -

IC=−1A [1] 10 30 -

VCEsat collector-emitter

saturation voltage IC=−100 mA;

IB=−10 mA [1] -−60 −120 mV

IC=−100 mA;

IB=−20 mA [1] -−50 −100 mV

IC=−500 mA;

IB=−50 mA [1] -−200 −300 mV

VBEsat base-emitter

saturation voltage IC=−1A;

IB=−100 mA [1] -−1−1.2 V

tddelay time VCC =−6V;

IC=−0.5 A;

IBon =−0.1 A;

IBoff =0.1A

-8-ns

trrise time - 282 - ns

ton turn-on time - 290 - ns

tsstorage time - 430 - ns

tffall time - 300 - ns

toff turn-off time - 730 - ns

fTtransition frequency VCE =−10 V;

IC=−10 mA;

f=100MHz

-115-MHz

Cccollector capacitance VCB =−20 V;

IE=i

e=0A;

f=1MHz

-10-pF

Ceemitter capacitance VEB =−0.5 V;

IC=i

c=0A;

f=1MHz

- 150 - pF

Product data sheet Rev. 01 — 10 March 2010 6 of 13

NXP Semiconductors PBHV9115X

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

VCE =−10 V

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

Fig 4. DC current gain as a function of collector

current; typical values Fig 5. Collector current as a fun ction of

collector-emitter voltage; typical values

VCE =−10 V

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

IC/IB=10

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

Fig 6. Base-emitter voltage as a function of collector

current; typical values Fig 7. Base-emitter saturation voltage as a function

of collector current; typical values

006aab166

200

100

300

400

hFE

IC (mA)

−10−1−104

−103

−1−102

−10

(1)

(2)

(3)

VCE (V)

0−5−4−2−3−1

006aab849

−1.0

−0.5

−1.5

−2.0

(A)

0.0

IB (mA) = −300

−10

−20

−50

−5

−200

−150

−100

−2

−1

006aab168

−0.4

−0.8

−1.2

VBE

(V)

IC (mA)

−10−1−104

−103

−1−102

−10

(1)

(2)

(3)

006aab850

IC (mA)

−10−1−103

−102

−1−10

−0.5

−0.9

−1.3

VBEsat

(V)

−0.1

(1)

(3)

(2)

Product data sheet Rev. 01 — 10 March 2010 7 of 13

NXP Semiconductors PBHV9115X

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

IC/IB=10

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

(1) IC/IB=50

(2) IC/IB=20

(3) IC/IB=10

Fig 8. Collector-emitter saturation voltage as a

function of collector current; typical values Fig 9. Coll ec to r-emitter sa tu ration voltage as a

function of collector current; typical values

IC/IB=10

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

(1) IC/IB=50

(2) IC/IB=20

(3) IC/IB=10

Fig 10. Collector-emitter saturation re sistance as a

function of collector current; typical values Fig 11. Collector-emitter saturation resistance as a

function of collector current; typical values

006aab851

IC (mA)

−10−1−103

−102

−1−10

−10−1

−1

VCEsat

(V)

−10−2

(1)

(3)

(2)

006aab852

IC (mA)

−10−1−103

−102

−1−10

−10−1

−1

VCEsat

(V)

−10−2

(1)

(3)

(2)

006aab853

IC (mA)

−10−1−104

−103

−1−102

−10

102

103

RCEsat

(Ω)

10−1

(2)

(1)

(3)

006aab854

IC (mA)

−10−1−104

−103

−1−102

−10

102

103

RCEsat

(Ω)

10−1

(2)

(1)

(3)

Product data sheet Rev. 01 — 10 March 2010 8 of 13

NXP Semiconductors PBHV9115X

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

8. Test information

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

[2] T1: normal taping

[3] T3: 90° taping

Fig 12. Test circuit for switchin g tim e s

DUT

mgd624

(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

VBB

VCC

Fig 13. Package outline SOT89 (SC-62/TO-243)

06-08-29Dimensions in mm

4.6

4.4

1.8

1.4

1.6

1.4

1.2

0.8

1.5

0.48

0.35

0.44

0.23

0.53

0.40

2.6

2.4 4.25

3.75

123

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

1000 4000

PBHV9115X SOT89 8 mm pitch, 12 mm tape and reel; T1 [2] -115 -135

8 mm pitch, 12 mm tape and reel; T3 [3] -120 -

Product data sheet Rev. 01 — 10 March 2010 9 of 13

NXP Semiconductors PBHV9115X

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

11. Soldering

Fig 14. Reflow soldering footprint SOT89 (SC-62/TO-243)

Fig 15. Wave soldering footprint SOT89 (SC-62/TO-243)

solder lands

solder resist

occupied area

solder paste

sot089_

1.2

1.9

2.25

4.75

(3×)

0.7

(3×)

0.6

(3×)

1.1

(2×)

1.2

0.85 0.2

0.5

1.7

4.85

3.95

4.6

1.51.5

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot089_

0.7

5.3

6.6

2.4

3.5

0.5

1.8

(2×)

1.5

(2×)

7.6

1.9 1.9

Dimensions in mm

Product data sheet Rev. 01 — 10 March 2010 10 of 13

NXP Semiconductors PBHV9115X

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PBHV9115X_1 20100310 Product data sheet - -

Product data sheet Rev. 01 — 10 March 2010 11 of 13

NXP Semiconductors PBHV9115X

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semicond uctors sales

office. In case of any inconsistency or conflict wit h the short data sheet, the

full data sheet shall pre va il.

Product specificat ion — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semicondu ctors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, milit ary, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on a weakness or default in the

customer application /use or t he application/use of customer’s third party

customer(s) (hereinafter both referred to as “Application”). It is customer’s

sole responsibility to check whether the NXP Semiconductors product is

suitable and fit for the Appl ica tion plann ed. Customer has to do all necessary

testing for the Application in order to avoid a default of the Application and t he

product. NXP Semiconductors does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter m s and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or inte llectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

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Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products — Unless this data sheet expressly

states that t his specific NXP Semiconductors prod uct is automotive qualified,

the product is not suit ab le for aut omotive u se. It is neit her qua lifi ed n or test ed

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclu sio n and/or use of

non-automotive qualifie d products in automot ive equipment or applications.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 01 — 10 March 2010 12 of 13

NXP Semiconductors PBHV9115X

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

In the event that customer uses the product for design-in and use in

automotive applications to automot ive specifications and standards, custome r

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such au tomotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design an d

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PBHV9115X

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 10 March 2010

Document identifier: PBHV9115X_1

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Packing information . . . . . . . . . . . . . . . . . . . . . 8

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Contact information. . . . . . . . . . . . . . . . . . . . . 12

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13