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1. Product profile
1.1 General description
500 mA PNP Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package.
NPN complement: PDTD123YT.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PDTB123YT
PNP 500 mA, 50 V resistor-equipped transistor;
R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 3 — 30 August 2010 Product data sheet
500 mA output current capability Reduces pick and place costs
Built-in bias resistors ±10 % resistor ratio tolerance
Simplifies circuit design AEC-Q101 qualified
Reduces component count
Digital application in automotive and
industrial segments
Cost-saving alternative for BC807 series
in digital applications
Control of IC inputs Switching loads
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 50 V
IOoutput current - - 500 mA
R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 4.1 4.55 5
PDTB123YT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 30 August 2010 2 of 10
NXP Semiconductors PDTB123YT
PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 input (base)
2 GND (emitter)
3 output (collector)
006aaa14
4
12
3
sym003
3
2
1
R1
R2
Table 3. Ordering information
Type number Package
Name Description Version
PDTB123YT - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code[1]
PDTB123YT *7Y
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 5V
VIinput voltage
positive - +5 V
negative - 12 V
IOoutput current - 500 mA
PDTB123YT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 30 August 2010 3 of 10
NXP Semiconductors PDTB123YT
PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Ptot total power dissipation Tamb 25 °C[1] -250mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature - 150 °C
Tamb ambient temperature 65 +150 °C
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1] --500K/W
Table 7. Characteristics
Tamb =25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base
cut-off current VCB =40 V; IE=0A - - 100 nA
VCB =50 V; IE=0A - - 100 nA
ICEO collector-emitter
cut-off current VCE =50 V; IB=0A - - 0.5 μA
IEBO emitter-base
cut-off current VEB =5V; I
C=0A - - 0.65 mA
hFE DC current gain VCE =5V;
IC=50 mA 70 - -
VCEsat collector-emitter
saturation voltage IC=50 mA;
IB=2.5 mA --0.3 V
VI(off) off-state input voltage VCE =5V;
IC=100 μA0.4 0.6 1.0 V
VI(on) on-state input voltage VCE =0.3 V;
IC=20 mA 0.5 1.0 1.4 V
R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 4.1 4.55 5
Cccollector capacitance VCB =10 V;
IE=i
e=0A;
f=100MHz
-11-pF
PDTB123YT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 30 August 2010 4 of 10
NXP Semiconductors PDTB123YT
PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
VCE =5V
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =40 °C
IC/IB=20
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =40 °C
Fig 1. DC current gain as a function of collector
current; typical values Fig 2. Collector- em itter saturation voltage as a
function of collector current; typical values
VCE =0.3 V
(1) Tamb =40 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
VCE =5V
(1) Tamb =40 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of
collector current; typical values Fig 4. Off-state input voltage as a function of
collector current; typical values
006aaa357
10
102
103
hFE
1
IC (mA)
101103
102
110
(1)
(2)
(3)
006aaa358
IC (mA)
1102
10
101
VCEsat
(V)
102
(1)
(2)
(3)
006aaa359
IC (mA)
101103
102
110
1
10
VI(on)
(V)
101
(1)
(2)
(3)
IC (mA)
101101
006aaa360
1
10
VI(off)
(V)
101
(1)
(2)
(3)
PDTB123YT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 30 August 2010 5 of 10
NXP Semiconductors PDTB123YT
PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in auto motive applications.
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 5. Package outline SOT23 (TO-236AB)
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
12
3
Table 8. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quantit y
3000 10000
PDTB123YT SOT23 4 mm pi tch, 8 mm tape and reel -215 -2 35
PDTB123YT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 30 August 2010 6 of 10
NXP Semiconductors PDTB123YT
PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
11. Soldering
Fig 6. Reflow soldering footprint SOT23 (TO -2 36 AB)
Fig 7. Wave soldering footprint SOT23 (TO-236AB)
solder lands
solder resist
occupied area
solder paste
sot023_
fr
0.5
(3×)
0.6
(3×)
0.6
(3×)
0.7
(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_
fw
2.8
4.5
1.4
4.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensions in mm
PDTB123YT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 30 August 2010 7 of 10
NXP Semiconductors PDTB123YT
PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PDTB123YT v.3 20100830 Product data sheet - PDTB123Y_SER_2
Modifications: Type numbers PDTB123YK and PDTB123YS deleted.
Table 7 “Characteristics: unit for VCEsat changed from mV to V.
Section 8 “Test information: added.
Section 11 “Soldering: added.
Section 13 “Legal information: updated.
PDTB123Y_SER_2 20091116 Product data sheet - PDTB123Y_SER_1
PDTB123Y_SER_1 20050427 Product data sheet - -
PDTB123YT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 30 August 2010 8 of 10
NXP Semiconductors PDTB123YT
PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
Product specificat io nThe information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however ,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indire ct, incidental,
punitive, special or consequ ential damages (including - wit hout limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconduct ors’ aggregate and cumulat ive liability toward s
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semicondu ctors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, in cluding without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suit able for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Custo mers should provide appropriate
design and operating safeguards to minimize the risks associate d with t heir
applications and products.
NXP Semiconductors does not accept any liabil i ty related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party custo m er(s). Customer is responsible for doing all necessar y
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter m s and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or inte llectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
PDTB123YT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 30 August 2010 9 of 10
NXP Semiconductors PDTB123YT
PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PDTB123YT
PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 30 August 2010
Document identifier: PDTB123YT
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 5
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
10 Packing information . . . . . . . . . . . . . . . . . . . . . 5
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 7
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 8
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
14 Contact information. . . . . . . . . . . . . . . . . . . . . . 9
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10