RS2A thru RS2K www.vishay.com Vishay General Semiconductor Surface Mount Fast Switching Rectifier FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * Fast switching for high efficiency * High forward surge capability * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * AEC-Q101 qualified DO-214AA (SMB) * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.5 A VRRM 50 V to 800 V IFSM 50 A trr 150 ns, 250 ns, 500 ns VF 1.3 V TJ max. 150 C MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code RS2A RS2B RS2D RS2G RS2J RS2K UNIT RA RB RD RG RJ RK 100 200 400 600 800 V Maximum repetitive peak reverse voltage VRRM 50 Maximum RMS voltage VRMS 35 70 140 280 420 500 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 V Maximum average forward rectified current at TL = 100 C IF(AV) 1.5 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A TJ, TSTG - 55 to + 150 C Operating junction and storage temperature range Revision: 14-Mar12 Document Number: 88708 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RS2A thru RS2K www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage 1.5 A RS2A RS2B RS2D VF TA = 25 C Maximum DC reverse current at rated DC blocking voltage SYMBOL TA = 125 C RS2G RS2J RS2K 1.3 V 5.0 IR A 200 Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 150 Typical junction capacitance 4.0 V, 1 MHz CJ 20 UNIT 250 500 17 ns pF THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) SYMBOL PARAMETER RS2B RS2D RS2G 55 RJL (1) 18 RJA Typical thermal resistance RS2A (1) RS2J RS2K UNIT C/W Note (1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.27" x 0.27" (7.0 mm x 7.0 mm) copper pad ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED P/N PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE RS2J-E3/52T 0.096 52T 750 7" diameter plastic tape and reel RS2J-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel RS2JHE3/52T (1) 0.096 52T 750 7" diameter plastic tape and reel RS2JHE3/5BT (1) 0.096 5BT 3200 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 50 Resistive or Inductive Load 1.50 1.25 1.00 0.75 0.50 P.C.B. Mounted 0.27" x 0.27" (7.0 mm x 7.0 mm) Copper Pad Areas 0.25 0 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 1.75 TL = 100 C 8.3 ms Single Half Sine-Wave 40 30 20 10 0 50 60 70 80 90 100 110 120 130 140 150 160 1 10 100 Lead Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 14-Mar12 Document Number: 88708 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 RS2A thru RS2K www.vishay.com Vishay General Semiconductor 100 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 25 C 1 Pulse Width = 300 s 1 % Duty Cycle 0.1 0.01 0.4 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p RS2A thru RS2G 10 RS2J thru RS2K 1 0.6 0.8 1.0 1.2 1.6 1.4 1.8 10 1 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 Instantaneous Reverse Current (A) 100 TJ = 125 C 10 1 TJ = 25 C 0.1 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Revision: 14-Mar12 Document Number: 88708 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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