TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu. Continuity of Specifications There is no change to this datasheet as a result of offering the device as a SPANSION revisions will occur when appropriate, and changes will be noted in a revision summary. TM product. Future routine Continuity of Ordering Part Numbers AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these products, please use only the Ordering Part Numbers listed in this document. For More Information Please contact your local AMD or Fujitsu sales office for additional information about SPANSION solutions. TM memory FUJITSU SEMICONDUCTOR DATA SHEET DS05-50230-1E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 4M (x16) STATIC RAM MB84VD22184FM-70/MB84VD22194FM-70 FEATURES * Power Supply Voltage of 2.7 V to 3.1 V * High Performance 70 ns maximum access time (Flash) 70 ns maximum access time (SRAM) * Operating Temperature -30 C to +85 C * Package 56-ball FBGA (Continued) PRODUCT LINE UP Part No. Supply Voltage(V) VD22184FM / VD22194FM VCCf= 3.0V +0.1 V -0.3 V VCCs= 3.0V Max Address Access Time (ns) 70 70 Max CE Access Time (ns) 70 70 Max OE Access Time (ns) 30 35 +0.1 V -0.3 V Note: Both VCCf and VCCs must be in recommended operation range when either part is being accessed. PACKAGE 56-ball plastic FBGA (BGA-56P-M03) MB84VD22184FM/VD22194FM-70 (Continued) -- FLASH MEMORY * Simultaneous Read/Write Operations (Dual Bank) Bank 1 : 8 Mbit (8 KB x 8 and 64 KB x 15) Bank 2 : 24 Mbit (64 KB x 48) Host system can program or erase in one bank, and then read immediately and simultaneously from the other bank with zero latency between read and write operations. Read-while-erase Read-while-program * Minimum 100,000 Write/Erase Cycles * Sector Erase Architecture Eight 4K word and sixty-three 32K word sectors in word mode Any combination of sectors can be concurrently erased. Also supports full chip erase. * Boot Code Sector Architecture MB84VD22184: Top sector MB84VD22194: Bottom sector * Embedded EraseTM * Algorithms Automatically pre-programs and erases the chip or any sector * Embedded ProgramTM * Algorithms Automatically writes and verifies data at specified address * Data Polling and Toggle Bit Feature for Detection of Program or Erase Cycle Completion * Ready-Busy Output (RY/BY) Hardware method for detection of program or erase cycle completion * Automatic Sleep Mode When addresses remain stable, automatically switch themselves to low power mode. * Low VCCf Write Inhibit 2.5 V * HiddenROM Region 256 byte of HiddenROM, accessible through a new "HiddenROM Enable" command sequence Factory serialized and protected to provide a secure electronic serial number (ESN) * WP/ACC Input Pin At VIL, allows protection of "outermost" 2 x 8 bytes on boot sectors, regardless of sector protection/unprotection status. At VIH, allows removal of boot sector protection At VACC, increases program performance * Erase Suspend/Resume Suspends the erase operation to allow a read in another sector within the same device * Please refer to "MBM29DL34TF/BF" Datasheet in Detailed Function -- SRAM * Power Dissipation Operating : 40 mA Max Standby : 10 A Max * Power Down Features using CE1s and CE2s * Data Retention Supply Voltage: 1.5 V to 3.1 V * CE1s and CE2s Chip Select * Byte Data Control: LB (DQ7 to DQ0), UB (DQ15 to DQ8) *: Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc. 2 MB84VD22184FM/VD22194FM-70 PIN ASSIGNMENT (Top View) Marking side B8 C8 D8 E8 F8 G8 A15 N.C. N.C. A16 N.C. Vss A7 B7 C7 D7 E7 F7 G7 H7 A11 A12 A13 A14 N.C. DQ15 DQ7 DQ14 A6 B6 C6 D6 E6 F6 G6 H6 A8 A19 A9 A10 DQ6 DQ13 DQ12 DQ5 A5 B5 C5 F5 G5 H5 WE CE2s A20 DQ4 Vccs N.C. A4 B4 C4 F4 G4 H4 RY/BY DQ3 Vccf DQ11 WP/ACC RESET A3 B3 C3 D3 E3 F3 G3 H3 LB UB A18 A17 DQ1 DQ9 DQ10 DQ2 A2 B2 C2 D2 E2 F2 G2 H2 A7 A6 A5 A4 VSS OE DQ0 DQ8 B1 C1 D1 E1 F1 G1 A3 A2 A1 A0 CEf CE1s (BGA-56P-M03) 3 MB84VD22184FM/VD22194FM-70 PIN DESCRIPTION Pin Name Input/Output A17 to A0 Address Inputs (Common) I A20 to A18 Address Inputs (Flash) I DQ15 to DQ0 Data Inputs / Outputs (Common) I/O CEf Chip Enable (Flash) I CE1s Chip Enable (SRAM) I CE2s Chip Enable (SRAM) I OE Output Enable (Common) I WE Write Enable (Common) I Ready/Busy Outputs (Flash) Open Drain Output O UB Upper Byte Control (SRAM) I LB Lower Byte Control (SRAM) I Hardware Reset Pin / Sector Protection Unlock (Flash) I Write Protect / Acceleration (Flash) I RY/BY RESET WP/ACC 4 Function N.C. No Internal Connection VSS Device Ground (Common) Power VCCf Device Power Supply (Flash) Power VCCs Device Power Supply (SRAM) Power -- MB84VD22184FM/VD22194FM-70 BLOCK DIAGRAM VCCf VSS A20 to A0 RY/BY A20 to A0 WP/ACC RESET CEf 32 M bit Flash Memory DQ15 to DQ0 DQ15 to DQ0 VCCs VSS A17 to A0 LB UB WE OE CE1s CE2s 4 M bit Static RAM DQ15 to DQ0 5 MB84VD22184FM/VD22194FM-70 DEVICE BUS OPERATIONS * User Bus Operations Operation *1, *3 Full Standby CEf CE1s CE2s OE H H Output Disable L Read from Flash *2 L Write to Flash L Read from SRAM Write to SRAM H H Temporary Sector Group Unprotection*4 X Flash Hardware Reset X Boot Block Sector Write Protection X H X X L L H H X X L H X X L H X X L L L H H X X H X X L X X WP/ DQ7 to DQ0 DQ15 to DQ8 RESET ACC *5 WE LB UB X X X X High-Z High-Z H H X X High-Z High-Z X X H H High-Z High-Z H H X X High-Z High-Z L H X X DOUT H L X X L L X H L H X H X DOUT H X DIN DIN H X L DOUT DOUT H L High-Z DOUT H X L H DOUT High-Z L L DIN DIN H L High-Z DIN H X L H DIN High-Z X X X X X X VID X X X X X High-Z High-Z L X X X X X X X X L Legend: L = VIL, H = VIH, X = VIL or VIH. See DC Characteristics for voltage levels. *1 : Other operations except for indicated this column are inhibited. *2 : WE can be VIL if OE is VIL, OE at VIH initiates the write operations. *3 : Do not apply CEf = VIL, CE1s = VIL and CE2s = VIH at a time. *4 : It is also used for the extended sector group protections. *5 : WP/ACC = VIL; protection of boot sectors. WP/ACC = VIH; removal of boot sectors protection. WP/ACC = VACC (9V) ; Program time will reduce by 40%. 6 MB84VD22184FM/VD22194FM-70 ABSOLUTE MAXIMUM RATINGS Parameter Rating Symbol Unit Min Max Tstg -55 +125 C TA -30 +85 C VIN, VOUT -0.3 VCCf +0.3 V VCCs +0.4 V VCCf/VCCs Supply *1 VCCf, VCCs -0.3 +3.3 V 2 VIN -0.5 + 13.0 V VIN -0.5 +10.5 V Storage Temperature Ambient Temperature with Power Applied Voltage with Respect to Ground All pins except RESET, WP/ACC *1 RESET * 3 WP/ACC * *1 : Minimum DC voltage on input or I/O pins is -0.3 V. During voltage transitions, input or I/O pins may undershoot VSS to -1.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VCCf+0.3 V or VCCs+0.4 V. During voltage transitions, input or I/O pins may overshoot to VCCf+1.0 V or VCCs + 1.0 V for periods of up to 20 ns. *2 : Minimum DC input voltage on RESET pin is -0.5 V. During voltage transitions, RESET pins may undershoot VSS to -2.0 V for periods of up to 20 ns. Voltage difference between input and supply voltage (VIN-VCCf or VCCs) does not exceed +9.0 V. Maximum DC input voltage on RESET pins is +13.0 V which may overshoot to +14.0 V for periods of up to 20 ns. *3 : Minimum DC input voltage on WP/ACC pin is -0.5 V. During voltage transitions, WP/ACC pin may undershoot Vss to -2.0 V for periods of up to 20 ns. Maximum DC input voltage on WP/ACC pin is +10.5 V which may overshoot to +12.0 V for periods of up to 20 ns, when VCCf is applied. WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. RECOMMENDED OPERATING CONDITIONS Parameter Ambient Temperature VCCf/VCCs Supply Voltages Symbol Value Unit Min Max TA -30 +85 C Vccf, Vccs +2.7 +3.1 V Note: Operating ranges define those limits between which the functionality of the device is guaranteed. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device's electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within the recommended operating conditions. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representative beforehand. 7 MB84VD22184FM/VD22194FM-70 ELECTRICAL CHARACTERISTICS 1. DC CHARACTERISTICS Parameter Symbol Test Conditions Value Min Typ Max Unit Input Leakage Current ILI VIN = VSS to VCCf, VCCs -1.0 -- +1.0 A Output Leakage Current ILO VOUT = VSS to VCCf, VCCs -1.0 -- +1.0 A RESET Inputs Leakage Current ILIT VCCf = VCCf Max, VCCs = VCCs Max, RESET = 12.5V -- -- 35 A Flash VCC Active Current (Read) *1 ICC1f CEf = VIL, OE = VIH tCYCLE = 5 MHz -- -- 18 mA tCYCLE = 1 MHz -- -- 4 mA Flash VCC Active Current (Program/Erase) *2 ICC2f CEf = VIL, OE = VIH -- -- 30 mA Flash VCC Active Current (Read-While-Program) *5 ICC3f CEf = VIL, OE = VIH -- -- 48 mA Flash VCC Active Current (Read-While-Erase) *5 ICC4f CEf = VIL, OE = VIH -- -- 48 mA Flash VCC Active Current (Erase-Suspend-Program) ICC5f CEf = VIL, OE = VIH -- -- 35 mA ACC Input Leakage Current ILIA VCCf = VCCf Max, VCCs = VCCs Max, WP/ACC = VACC Max -- -- 20 mA SRAM VCC Active Current ICC1s VCCs = VCCs Max, CE1s = VIL, CE2s = VIH tCYCLE =10 MHz -- -- 40 mA SRAM VCC Active Current ICC2s tCYCLE = 10 MHz CE1s = 0.2 V, CE2s = VCCs - 0.2 V tCYCLE = 1 MHz -- -- 40 mA -- -- 8 mA Flash VCC Standby Current ISB1f VCCf = VCCf Max, CEf = VCCf 0.3 V RESET = VCCf 0.3 V, WP/ACC = VCCf 0.3 V -- -- 5 A Flash VCC Standby Current (RESET) ISB2f VCCf = VCCf Max, RESET = VSS 0.3 V, WP/ACC = VCCf 0.3 V -- -- 5 A Flash VCC Current (Automatic Sleep Mode) *3 ISB3f VCCf = VCCf Max, CEf = VSS 0.3 V RESET = VCCf 0.3 V, WP/ACC = VCCf 0.3 V VIN = VCCf 0.3 V or VSS 0.3 V -- -- 5 A SRAM VCC Standby Current ISB1s CE1s > VCCs - 0.2 V, CE2s > VCCs - 0.2 V LB = UB > VCCs-0.2 V or < 0.2V -- -- 10 A SRAM VCC Standby Current ISB2s CE1s > VCCs - 0.2 V or < 0.2V, CE2s < 0.2 V LB = UB > VCCs-0.2 V or < 0.2V -- -- 10 A (Continued) 8 MB84VD22184FM/VD22194FM-70 (Continued) Parameter Symbol Test Conditions Input Low Level VIL Input High Level Value Unit Min Typ Max -- -0.3 -- 0.5 V VIH -- 2.2 -- VCC+0.3*6 V Voltage for Sector Protection, and Temporary Sector Unprotection (RESET) *4 VID -- 11.5 -- 12.5 V Voltage for Program Acceleration (WP/ACC) *4 VACC -- 8.5 9.0 9.5 V SRAM Output Low Level VOL VCCs = VCCs Min, IOL = 0.1 mA -- -- 0.4 V SRAM Output High Level VOH VCCs = VCCs Min, IOH = -0.1 mA 2.0 -- -- V Flash Output Low Level VOL VCCf = VCCf Min, IOL = 4.0 mA -- -- 0.45 V Flash Output High Level VOH VCCf = VCCf Min, IOH = -0.1 mA VCCs-0.4 -- -- V Flash Low VCCf Lock-Out Voltage VLKO 2.3 -- 2.5 V -- *1 : The ICC current listed includes both the DC operating current and the frequency dependent component. *2 : ICC active while Embedded Algorithm (program or erase) is in progress. *3 : Automatic sleep mode enables the low power mode when address remain stable for 150 ns. *4 : Applicable for only VCCf applying. *5 : Embedded Algorithm (program or erase) is in progress. (@5 MHz) *6 : VCC indicates lower of VCCf or VCCs. 9 MB84VD22184FM/VD22194FM-70 2. AC CHARACTERISTICS * CE Timing Symbol Parameter Test Setup JEDEC Standard -- tCCR CE Recover Time -- Min * Timing Diagram for alternating SRAM to Flash CEf tCCR tCCR tCCR tCCR CE1s CE2s * Flash Characteristics Please refer to "32M Flash Memory for MCP". * SRAM Characteristics, Please refer to "4M SRAM for MCP". 10 Value Unit 0 ns MB84VD22184FM/VD22194FM-70 32 M FLASH MEMORY for MCP 1. Flexible Sector-erase Architecture on Flash Memory * Eight 4 K words, and sixty three 32 K words. * Individual-sector, multiple-sector, or bulk-erase capability. Bank B Bank A SA70 : 8KB (4KW) SA69 : 8KB (4KW) SA68 : 8KB (4KW) SA67 : 8KB (4KW) SA66 : 8KB (4KW) SA65 : 8KB (4KW) SA64 : 8KB (4KW) SA63 : 8KB (4KW) SA62 : 64KB (32KW) SA61 : 64KB (32KW) SA60 : 64KB (32KW) SA59 : 64KB (32KW) SA58 : 64KB (32KW) SA57 : 64KB (32KW) SA56 : 64KB (32KW) SA55 : 64KB (32KW) SA54 : 64KB (32KW) SA53 : 64KB (32KW) SA52 : 64KB (32KW) SA51 : 64KB (32KW) SA50 : 64KB (32KW) SA49 : 64KB (32KW) SA48 : 64KB (32KW) SA47 : 64KB (32KW) SA46 : 64KB (32KW) SA45 : 64KB (32KW) SA44 : 64KB (32KW) SA43 : 64KB (32KW) SA42 : 64KB (32KW) SA41 : 64KB (32KW) SA40 : 64KB (32KW) SA39 : 64KB (32KW) SA38 : 64KB (32KW) SA37 : 64KB (32KW) SA36 : 64KB (32KW) SA35 : 64KB (32KW) SA34 : 64KB (32KW) SA33 : 64KB (32KW) SA32 : 64KB (32KW) SA31 : 64KB (32KW) SA30 : 64KB (32KW) SA29 : 64KB (32KW) SA28 : 64KB (32KW) SA27 : 64KB (32KW) SA26 : 64KB (32KW) SA25 : 64KB (32KW) SA24 : 64KB (32KW) SA23 : 64KB (32KW) SA22 : 64KB (32KW) SA21 : 64KB (32KW) SA20 : 64KB (32KW) SA19 : 64KB (32KW) SA18 : 64KB (32KW) SA17 : 64KB (32KW) SA16 : 64KB (32KW) SA15 : 64KB (32KW) SA14 : 64KB (32KW) SA13 : 64KB (32KW) SA12 : 64KB (32KW) SA11 : 64KB (32KW) SA10 : 64KB (32KW) SA9 : 64KB (32KW) SA8 : 64KB (32KW) SA7 : 64KB (32KW) SA6 : 64KB (32KW) SA5 : 64KB (32KW) SA4 : 64KB (32KW) SA3 : 64KB (32KW) SA2 : 64KB (32KW) SA1 : 64KB (32KW) SA0 : 64KB (32KW) (Top Boot Block) 1FFFFFh 1FF000h 1FE000h 1FD000h 1FC000h 1FB000h 1FA000h 1F9000h 1F8000h 1F0000h 1E8000h 1E0000h 1D8000h 1D0000h 1C8000h 1C0000h 1B8000h 1B0000h 1A8000h 1A0000h 198000h 190000h 188000h 180000h 178000h 170000h 168000h 160000h 158000h 150000h 148000h 140000h 138000h 130000h 128000h 120000h 118000h 110000h 108000h 100000h 0F8000h 0F0000h 0E8000h 0E0000h 0D8000h 0D0000h 0C8000h 0C0000h 0B8000h 0B0000h 0A8000h 0A0000h 098000h 090000h 088000h 080000h 078000h 070000h 068000h 060000h 058000h 050000h 048000h 040000h 038000h 030000h 028000h 020000h 018000h 010000h 008000h 000000h Bank B Bank A SA70 : 64KB (32KW) SA69 : 64KB (32KW) SA68 : 64KB (32KW) SA67 : 64KB (32KW) SA66 : 64KB (32KW) SA65 : 64KB (32KW) SA64 : 64KB (32KW) SA63 : 64KB (32KW) SA62 : 64KB (32KW) SA61 : 64KB (32KW) SA60 : 64KB (32KW) SA59 : 64KB (32KW) SA58 : 64KB (32KW) SA57 : 64KB (32KW) SA56 : 64KB (32KW) SA55 : 64KB (32KW) SA54 : 64KB (32KW) SA53 : 64KB (32KW) SA52 : 64KB (32KW) SA51 : 64KB (32KW) SA50 : 64KB (32KW) SA49 : 64KB (32KW) SA48 : 64KB (32KW) SA47 : 64KB (32KW) SA46 : 64KB (32KW) SA45 : 64KB (32KW) SA44 : 64KB (32KW) SA43 : 64KB (32KW) SA42 : 64KB (32KW) SA41 : 64KB (32KW) SA40 : 64KB (32KW) SA39 : 64KB (32KW) SA38 : 64KB (32KW) SA37 : 64KB (32KW) SA36 : 64KB (32KW) SA35 : 64KB (32KW) SA34 : 64KB (32KW) SA33 : 64KB (32KW) SA32 : 64KB (32KW) SA31 : 64KB (32KW) SA30 : 64KB (32KW) SA29 : 64KB (32KW) SA28 : 64KB (32KW) SA27 : 64KB (32KW) SA26 : 64KB (32KW) SA25 : 64KB (32KW) SA24 : 64KB (32KW) SA23 : 64KB (32KW) SA22 : 64KB (32KW) SA21 : 64KB (32KW) SA20 : 64KB (32KW) SA19 : 64KB (32KW) SA18 : 64KB (32KW) SA17 : 64KB (32KW) SA16 : 64KB (32KW) SA15 : 64KB (32KW) SA14 : 64KB (32KW) SA13 : 64KB (32KW) SA12 : 64KB (32KW) SA11 : 64KB (32KW) SA10 : 64KB (32KW) SA9 : 64KB (32KW) SA8 : 64KB (32KW) SA7 : 8KB (4KW) SA6 : 8KB (4KW) SA5 : 8KB (4KW) SA4 : 8KB (4KW) SA3 : 8KB (4KW) SA2 : 8KB (4KW) SA1 : 8KB (4KW) SA0 : 8KB (4KW) 1FFFFFh 1F8000h 1F0000h 1E8000h 1E0000h 1D8000h 1D0000h 1C8000h 1C0000h 1B8000h 1B0000h 1A8000h 1A0000h 198000h 190000h 188000h 180000h 178000h 170000h 168000h 160000h 158000h 150000h 148000h 140000h 138000h 130000h 128000h 120000h 118000h 110000h 108000h 100000h 0F8000h 0F0000h 0E8000h 0E0000h 0D8000h 0D0000h 0C8000h 0C0000h 0B8000h 0B0000h 0A8000h 0A0000h 098000h 090000h 088000h 080000h 078000h 070000h 068000h 060000h 058000h 050000h 048000h 040000h 038000h 030000h 028000h 020000h 018000h 010000h 008000h 007000h 006000h 005000h 004000h 003000h 002000h 001000h 000000h (Bottom Boot Block) 11 MB84VD22184FM/VD22194FM-70 Sector Address Table (Top Boot Type) B a Sector n k B A N K B SA0 SA1 SA2 SA3 SA4 SA5 SA6 SA7 SA8 SA9 SA10 SA11 SA12 SA13 SA14 SA15 SA16 SA17 SA18 SA19 SA20 SA21 SA22 SA23 SA24 SA25 SA26 SA27 SA28 SA29 SA30 SA31 Sector address Bank address A20 A19 A18 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 1 0 0 1 0 0 1 0 0 1 0 0 1 0 0 1 0 0 1 0 1 0 0 1 0 0 1 0 0 1 0 0 1 0 0 1 0 0 1 0 0 1 0 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 A17 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 A16 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 A15 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 A14 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X A13 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X A12 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X A11 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X Sector size (Kwords) Address range 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 000000h to 007FFFh 008000h to 00FFFFh 010000h to 017FFFh 018000h to 01FFFFh 020000h to 027FFFh 028000h to 02FFFFh 030000h to 037FFFh 038000h to 03FFFFh 040000h to 047FFFh 048000h to 04FFFFh 050000h to 057FFFh 058000h to 05FFFFh 060000h to 067FFFh 068000h to 06FFFFh 070000h to 077FFFh 078000h to 07FFFFh 080000h to 087FFFh 088000h to 08FFFFh 090000h to 097FFFh 098000h to 09FFFFh 0A0000h to 0A7FFFh 0A8000h to 0AFFFFh 0B0000h to 0B7FFFh 0B8000h to 0BFFFFh 0C0000h to 0C7FFFh 0C8000h to 0CFFFFh 0D0000h to 0D7FFFh 0D8000h to 0DFFFFh 0E0000h to 0E7FFFh 0E8000h to 0EFFFFh 0F0000h to 0F7FFFh 0F8000h to 0FFFFFh (Continued) 12 MB84VD22184FM/VD22194FM-70 (Continued) B a Sector n k B A N K B B a n k A SA32 SA33 SA34 SA35 SA36 SA37 SA38 SA39 SA40 SA41 SA42 SA43 SA44 SA45 SA46 SA47 SA48 SA49 SA50 SA51 SA52 SA53 SA54 SA55 SA56 SA57 SA58 SA59 SA60 SA61 SA62 SA63 SA64 SA65 SA66 SA67 SA68 SA69 SA70 Sector address Bank address A20 A19 A18 1 0 0 1 0 0 1 0 0 1 0 0 1 0 0 1 0 0 1 0 0 1 0 0 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 A17 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 1 1 1 1 1 1 1 A16 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 1 1 1 1 1 1 1 A15 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 1 1 1 1 1 1 1 A14 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 0 0 0 0 1 1 1 1 A13 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 0 0 1 1 0 0 1 1 A12 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 0 1 0 1 0 1 0 1 A11 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X Sector size (Kwords) Address range 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 4 4 4 4 4 4 4 4 100000h to 107FFFh 108000h to 10FFFFh 110000h to 117FFFh 118000h to 11FFFFh 120000h to 127FFFh 128000h to 12FFFFh 130000h to 137FFFh 138000h to 13FFFFh 140000h to 147FFFh 148000h to 14FFFFh 150000h to 157FFFh 158000h to 15FFFFh 160000h to 167FFFh 168000h to 16FFFFh 170000h to 177FFFh 178000h to 17FFFFh 180000h to 187FFFh 188000h to 18FFFFh 190000h to 197FFFh 198000h to 19FFFFh 1A0000h to 1A7FFFh 1A8000h to 1AFFFFh 1B0000h to 1B7FFFh 1B8000h to 1BFFFFh 1C0000h to 1C7FFFh 1C8000h to 1CFFFFh 1D0000h to 1D7FFFh 1D8000h to 1DFFFFh 1E0000h to 1E7FFFh 1E8000h to 1EFFFFh 1F0000h to 1F7FFFh 1F8000h to 1F8FFFh 1F9000h to 1F9FFFh 1FA000h to 1FAFFFh 1FB000h to 1FBFFFh 1FC000h to 1FCFFFh 1FD000h to 1FDFFFh 1FE000h to 1FEFFFh 1FF000h to 1FFFFFh 13 MB84VD22184FM/VD22194FM-70 Sector Address Table (Bottom Boot Type) B a Sector n k B a n k B SA70 SA69 SA68 SA67 SA66 SA65 SA64 SA63 SA62 SA61 SA60 SA59 SA58 SA57 SA56 SA55 SA54 SA53 SA52 SA51 SA50 SA49 SA48 SA47 SA46 SA45 SA44 SA43 SA42 SA41 SA40 SA39 Sector address Bank address A20 A19 A18 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 1 1 0 0 1 0 0 1 0 0 1 0 0 1 0 0 1 0 0 1 0 0 1 0 0 A17 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 A16 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 A15 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 A14 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X A13 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X A12 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X A11 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X Sector size (Kwords) Address range 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 1F8000h to 1FFFFFh 1F0000h to 1F7FFFh 1E8000h to 1EFFFFh 1E0000h to 1E7FFFh 1D8000h to 1DFFFFh 1D0000h to 1D7FFFh 1C8000h to 1CFFFFh 1C0000h to 1C7FFFh 1B8000h to 1BFFFFh 1B0000h to 1B7FFFh 1A8000h to 1AFFFFh 1A0000h to 1A7FFFh 198000h to 19FFFFh 190000h to 197FFFh 188000h to 18FFFFh 180000h to 187FFFh 178000h to 17FFFFh 170000h to 177FFFh 168000h to 16FFFFh 160000h to 167FFFh 158000h to 15FFFFh 150000h to 157FFFh 148000h to 14FFFFh 140000h to 147FFFh 138000h to 13FFFFh 130000h to 137FFFh 128000h to 12FFFFh 120000h to 127FFFh 118000h to 11FFFFh 110000h to 117FFFh 108000h to 10FFFFh 100000h to 107FFFh (Continued) 14 MB84VD22184FM/VD22194FM-70 B a Bank Sector n address k A20 A19 A18 SA38 0 1 1 SA37 0 1 1 SA36 0 1 1 SA35 0 1 1 SA34 0 1 1 SA33 0 1 1 B SA32 0 1 1 a SA31 0 1 1 n 0 1 0 k SA30 SA29 0 1 0 B SA28 0 1 0 SA27 0 1 0 SA26 0 1 0 SA25 0 1 0 SA24 0 1 0 SA23 0 1 0 SA22 0 0 1 SA21 0 0 1 SA20 0 0 1 SA19 0 0 1 SA18 0 0 1 SA17 0 0 1 SA16 0 0 1 SA15 0 0 1 SA14 0 0 0 SA13 0 0 0 B 0 0 0 a SA12 n SA11 0 0 0 k SA10 0 0 0 A SA9 0 0 0 SA8 0 0 0 SA7 0 0 0 SA6 0 0 0 SA5 0 0 0 SA4 0 0 0 SA3 0 0 0 SA2 0 0 0 SA1 0 0 0 SA0 0 0 0 Sector address A17 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 0 0 0 0 0 0 0 A16 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 1 1 0 0 0 0 0 0 0 0 0 A15 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 1 0 0 0 0 0 0 0 0 A14 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 1 1 1 1 0 0 0 0 A13 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 1 1 0 0 1 1 0 0 A12 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 1 0 1 0 1 0 1 0 A11 X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X Sector size (Kwords) Address range 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 32 4 4 4 4 4 4 4 4 0F8000h to 0FFFFFh 0F0000h to 0F7FFFh 0E8000h to 0EFFFFh 0E0000h to 0E7FFFh 0D8000h to 0DFFFFh 0D0000h to 0D7FFFh 0C8000h to 0CFFFFh 0C0000h to 0C7FFFh 0B8000h to 0BFFFFh 0B0000h to 0B7FFFh 0A8000h to 0AFFFFh 0A0000h to 0A7FFFh 098000h to 09FFFFh 090000h to 097FFFh 088000h to 08FFFFh 080000h to 087FFFh 078000h to 07FFFFh 070000h to 077FFFh 068000h to 06FFFFh 060000h to 067FFFh 058000h to 05FFFFh 050000h to 057FFFh 048000h to 04FFFFh 040000h to 047FFFh 038000h to 03FFFFh 030000h to 037FFFh 028000h to 02FFFFh 020000h to 027FFFh 018000h to 01FFFFh 010000h to 017FFFh 008000h to 00FFFFh 007000h to 007FFFh 006000h to 006FFFh 005000h to 005FFFh 004000h to 004FFFh 003000h to 003FFFh 002000h to 002FFFh 001000h to 001FFFh 000000h to 000FFFh 15 MB84VD22184FM/VD22194FM-70 Sector Group Addresses Table (Top Boot Type) Sector group A20 A19 A18 A17 A16 A15 A14 A13 A12 Sectors SGA0 0 0 0 0 0 0 X X X SA0 0 1 1 0 X X X SA1 to SA3 1 1 SGA1 0 0 0 SGA2 0 0 0 1 X X X X X SA4 to SA7 SGA3 0 0 1 0 X X X X X SA8 to SA11 SGA4 0 0 1 1 X X X X X SA12 to SA15 SGA5 0 1 0 0 X X X X X SA16 to SA19 SGA6 0 1 0 1 X X X X X SA20 to SA23 SGA7 0 1 1 0 X X X X X SA24 to SA27 SGA8 0 1 1 1 X X X X X SA28 to SA31 SGA9 1 0 0 0 X X X X X SA32 to SA35 SGA10 1 0 0 1 X X X X X SA36 to SA39 SGA11 1 0 1 0 X X X X X SA40 to SA43 SGA12 1 0 1 1 X X X X X SA44 to SA47 SGA13 1 1 0 0 X X X X X SA48 to SA51 SGA14 1 1 0 1 X X X X X SA52 to SA55 SGA15 1 1 1 0 X X X X X SA56 to SA59 0 0 0 1 X X X SA60 to SA62 1 0 SGA16 16 0 1 1 1 1 SGA17 1 1 1 1 1 1 0 0 0 SA63 SGA18 1 1 1 1 1 1 0 0 1 SA64 SGA19 1 1 1 1 1 1 0 1 0 SA65 SGA20 1 1 1 1 1 1 0 1 1 SA66 SGA21 1 1 1 1 1 1 1 0 0 SA67 SGA22 1 1 1 1 1 1 1 0 1 SA68 SGA23 1 1 1 1 1 1 1 1 0 SA69 SGA24 1 1 1 1 1 1 1 1 1 SA70 MB84VD22184FM/VD22194FM-70 Sector Group Addresses Table (Bottom Boot Type) Sector group A20 A19 A18 A17 A16 A15 A14 A13 A12 Sectors SGA0 0 0 0 0 0 0 0 0 0 SA0 SGA1 0 0 0 0 0 0 0 0 1 SA1 SGA2 0 0 0 0 0 0 0 1 0 SA2 SGA3 0 0 0 0 0 0 0 1 1 SA3 SGA4 0 0 0 0 0 0 1 0 0 SA4 SGA5 0 0 0 0 0 0 1 0 1 SA5 SGA6 0 0 0 0 0 0 1 1 0 SA6 SGA7 0 0 0 0 0 0 1 1 1 SA7 0 1 1 0 X X X SA8 to SA10 1 1 SGA8 0 0 0 0 SGA9 0 0 0 1 X X X X X SA11 to SA14 SGA10 0 0 1 0 X X X X X SA15 to SA18 SGA11 0 0 1 1 X X X X X SA19 to SA22 SGA12 0 1 0 0 X X X X X SA23 to SA26 SGA13 0 1 0 1 X X X X X SA27 to SA30 SGA14 0 1 1 0 X X X X X SA31 to SA34 SGA15 0 1 1 1 X X X X X SA35 to SA38 SGA16 1 0 0 0 X X X X X SA39 to SA42 SGA17 1 0 0 1 X X X X X SA43 to SA46 SGA18 1 0 1 0 X X X X X SA47 to SA50 SGA19 1 0 1 1 X X X X X SA51 to SA54 SGA20 1 1 0 0 X X X X X SA55 to SA58 SGA21 1 1 0 1 X X X X X SA59 to SA62 SGA22 1 1 1 0 X X X X X SA63 to SA66 0 0 0 1 X X X SA67 to SA69 1 0 1 1 X X X SA70 SGA23 SGA24 1 1 1 1 1 1 1 1 17 MB84VD22184FM/VD22194FM-70 Sector Group Protection Verify Autoselect Codes Table (Top Boot Type) A20 to A12 A6 A3 A2 A1 A0 Code (HEX) Manufacture's Code BA L L L L L 04h Device Code BA L L L L H 2250h Sector Group Protection SA L L L H L 01h* Type Legend: L = VIL, H = VIH. See DC Characteristics for voltage levels. * : Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses. Expanded Autoselect Code Table (Top Boot Type) Type Code Manufacture's Code DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0 04h 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 Device Code 2250h 0 0 1 0 0 0 1 0 0 1 0 1 0 0 0 0 Sector Group Protection 01h 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 Sector Group Protection Verify Autoselect Codes Table (Bottom Boot Type) A20 to A12 A6 A3 A2 A1 A0 Code (HEX) Manufacture's Code BA L L L L L 04h Device Code BA L L L L H 2253h Sector Group Protection SA L L L H L 01h* Type Legend: L = VIL, H = VIH. See DC Characteristics for voltage levels. * : Outputs 01h at protected sector group addresses and outputs 00h at unprotected sector group addresses. Expanded Autoselect Code Table (Bottom Boot Type) Type 18 Code DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0 Manufacture's Code 04h 0 0 0 0 0 0 0 0 0 0 0 0 0 1 0 0 Device Code 2253h 0 0 1 0 0 0 1 0 0 1 0 1 0 0 1 1 Sector Group Protection 01h 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 1 MB84VD22184FM/VD22194FM-70 Command Definitions Table Command sequence Bus First bus write write cycle cycles req'd Addr. Data 1 XXXh F0h 3 555h AAh Second bus write cycle Addr. Data Addr. Data 90h A0h PA PD Sixth bus write cycle Autoselect 3 555h AAh 2AAh 55h Program Program Suspend Program Resume Chip Erase Sector Erase Erase Suspend Erase Resume Set to Fast Mode Fast Program *2 Reset from Fast Mode *2 Extended Sector Group Protection *3 4 555h AAh 2AAh 55h 1 BA B0h 1 BA 30h 6 6 1 1 555h 555h BA BA AAh AAh B0h 30h 2AAh 2AAh 55h 55h 555h 555h 80h 80h 555h 555h AAh AAh 2AAh 2AAh 55h 55h 555h SA 10h 30h 3 555h AAh 2AAh 55h 555h 20h 2 XXXh A0h PA PD 2 BA 90h XXXh F0h*6 4 XXXh 60h SPA 60h SPA 40h SPA SD 1 (BA) 55h 98h 3 555h AAh 2AAh 55h 555h 88h 4 555h AAh 2AAh 55h 555h A0h (HRA) PA PD 4 555h AAh 2AAh 55h (HRBA) 555h 90h XXXh 00h Query *4 HiddenROM Entry HiddenROM Program *5 HiddenROM Exit *5 Data 55h Fifth bus write cycle Addr. 555h (BA) 555h 555h Read/Reset*1 Read/Reset*1 Addr. 2AAh Fourth bus read/write cycle Data Addr. Data F0h RA RD Third bus write cycle (Continued) 19 MB84VD22184FM/VD22194FM-70 (Continued) *1 : Both of these reset commands are equivalent. *2 : This command is valid during Fast Mode. *3 : This command is valid while RESET = VID. *4 : The valid address are A6 to A0. *5 : This command is valid during HiddenROM mode. *6 : The date "00h" is also acceptable. Notes: * Address bits A20 to A11 = X = "H" or "L" for all address commands except or Program Address (PA) , Sector Address (SA) , Bank Address (BA) . * Bus operations are defined in "User Bus Operations Tables" (DEVICE BUS OPERATION). * RA = Address of the memory location to be read PA = Address of the memory location to be programmed Addresses are latched on the falling edge of the write pulse. SA = Address of the sector to be erased. The combination of A20, A19, A18, A17, A16, A15, A14, A13, and A12 will uniquely select any sector. BA = Bank Address (A20 to A18) * RD = Data read from location RA during read operation. PD = Data to be programmed at location PA. Data is latched on the rising edge of write pulse. * SPA = Sector group address to be protected. Set sector group address and (A6, A3, A2, A1, A0) = (0, 0, 0, 1, 0) . SD = Sector group protection verify data. Output 01h at protected sector group addresses and output 00h at unprotected sector group addresses. * HRA = Address of the HiddenROM area Top Boot Type : 1FFF80h to 1FFFFFh Bottom Boot Type : 000000h to 00007Fh * HRBA = Bank Address of the HiddenROM area Top Boot Type : A20 = A19 = A18 = 1 Bottom Boot Type : A20 = A19 = A18 = 0 * The system should generate the following address patterns : Word Mode : 555h or 2AAh to addresses A10 to A0 * Both Read/Reset commands are functionally equivalent, resetting the device to the read mode. * The command combinations not described in "Command Definitions Table" are illegal. 20 MB84VD22184FM/VD22194FM-70 2. AC Characteristics * Read Only Operations Characteristics Symbol Value* Parameter Test setup JEDEC Standard Read Cycle Time tAVAV tRC Address to Output Delay tAVQV tACC Chip Enable to Output Delay tELQV tCE Output Enable to Output Delay tGLQV tOE Chip Enable to Output High-Z tEHQZ Output Enable to Output High-Z Output Hold Time from Addresses, CEf or OE, Whichever Occurs First RESET Pin Low to Read Mode Unit Min Max 70 ns CEf = VIL OE = VIL 70 ns OE = VIL 70 ns -- 30 ns tDF -- 25 ns tGHQZ tDF -- 25 ns tAXQX tOH -- 0 ns -- tREADY -- 20 s -- * : Test Conditions: Output Load:1 TTL gate and 30 pF Input rise and fall times: 5 ns Input pulse levels: 0.0 V to 3.0 V Timing measurement reference level Input: 0.5 x Vccf Output: 0.5 x Vccf 21 MB84VD22184FM/VD22194FM-70 * Write/Erase/Program Operations Parameter Write Cycle Time Address Setup Time Address Setup Time to OE Low During Toggle Bit Polling Address Hold Time Address Hold Time from CEf or OE High During Toggle Bit Polling Data Setup Time Data Hold Time Read Output Enable Hold Time Toggle and Data Polling CEf High During Toggle Bit Polling OE High During Toggle Bit Polling Read Recover Time Before Write Read Recover Time Before Write CEf Setup Time WE Setup Time CEf Hold Time WE Hold Time Write Pulse Width CEf Pulse Width Write Pulse Width High CEf Pulse Width High Sector Erase Operation *1 VCCf Setup Time Rise Time to VID *2 Rise Time to VID *2 Voltage Transition Time *2 Write Pulse Width *2 OE Setup Time to WE Active *2 CEf Setup Time to WE Active *2 Recover Time from RY/BY RESET Pulse Width RESET High Level Period before Read Program/Erase Valid to RY/BY Delay Delay Time from Embedded Output Enable Erase Time-Out Time Erase Suspend Transition Time Symbol JEDEC Standard tAVAV tWC tAS tAVWL *1 : This does not include the preprogramming time. *2 : This timing is for Sector Group Protection operation. 22 Min 70 0 Value Typ Max Unit ns ns -- tASO 12 ns tWLAX tAH 45 ns -- tAHT 0 ns tDVWH tWHDX tDS tDH -- tOEH -- -- tCEPH tOEPH tGHWL tGHEL tCS tWS tCH tWH tWP tCP tWPH tCPH tWHWH2 tVCS tVIDR tVACCR tVLHT tWPP tOESP tCSP tRB tRP tRH tBUSY tEOE tTOW tSPD 30 0 0 10 20 20 0 0 0 0 0 0 35 35 25 25 50 500 500 4 100 4 4 500 200 50 0.5 90 70 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns s s ns ns s s s s ns ns ns ns ns s s tGHWL tGHEL tELWL tWLEL tWHEH tEHWH tWLWH tELEH tWHWL tEHEL tWHWH2 -- -- -- -- -- -- -- -- -- -- -- -- -- -- MB84VD22184FM/VD22194FM-70 * Read Cycle (Flash) tRC Address Stable Address tACC CEf tOE tDF OE tOEH WE tCEf High-Z DQ High-Z Output Valid tRC Address Address Stable tACC CEf tRH tRP tRH tCEf RESET tOH DQ High-Z Output Valid 23 MB84VD22184FM/VD22194FM-70 * Write Cycle (WE control) (Flash) 3rd Bus Cycle Data Polling 555h Address tWC PA tAS PA tRC tAH CEf tCH tCS tCEf OE tGHWL tWP tOE tWHWH1 tWPH WE tOH tDS tDH DQ A0h PD DQ7 DOUT Notes : * PA is address of the memory location to be programmed. * DQ7 is the output of the complement of the data written to the device. * DOUT is the output of the data written to the device. * Figure indicates last two bus cycles out of four bus cycle sequence. * These waveforms are for the x16 mode. 24 DOUT MB84VD22184FM/VD22194FM-70 * Write Cycle (CEf control) (Flash) 3rd Bus Cycle Address Data Polling PA 555h tWC tAS PA tAH WE tWS tWH OE tGHEL tCP tWHWH1 tCPH CEf tDS tDH DQ A0h PD DQ7 DOUT Notes : * PA is address of the memory location to be programmed. * DQ7 is the output of the complement of the data written to the device. * DOUT is the output of the data written to the device. * Figure indicates last two bus cycles out of four bus cycle sequence. * These waveforms are for the x16 mode. 25 MB84VD22184FM/VD22194FM-70 * AC Waveforms Chip/Sector Erase Operations (Flash) 2AAh 555h Address tWC tAS 555h SA* 2AAh 555h tAH CEf tCS tCH OE tGHWL tWP tWPH WE tDS tDH AAh DQ 30h for Sector Erase 55h 80h AAh 55h tVCS VCCf * : SA is the sector address for Sector Erase. Addresses = 555h for Chip Erase. Note : These waveform are for the x16 mode. 26 10h/ 30h MB84VD22184FM/VD22194FM-70 * AC Waveforms for Data Polling during Embedded Algorithm Operations (Flash) CEf tCH tDF tOE OE tOEH WE tCEf * DQ7 DQ7 = Valid Data DQ7 Data Input High-Z tWHWH1 or 2 DQ (DQ6 to DQ0) DQ6 to DQ0 = Output Flag Data Input tBUSY DQ8 to DQ0 Valid Data High-Z tEOE RY/BY * : DQ7 = Valid Data (The device has completed the Embedded operation.) 27 MB84VD22184FM/VD22194FM-70 * AC Waveforms for Toggle Bit during Embedded Algorithm Operations (Flash) Address tAHT tASO tAHT tAS CEf tCEPH WE tOEH tOEH tOEPH OE tDH DQ6/DQ2 Data tCEf * tOE Toggle Data Toggle Data Toggle Data tBUSY RY/BY * : DQ6 stops toggling (The device has completed the Embedded operation). 28 Stop Toggling Output Valid MB84VD22184FM/VD22194FM-70 * Back-to-back Read/Write Timing Diagram (Flash) Address Read Command Read Command Read Read tRC tWC tRC tWC tRC tRC BA1 BA2 (555h) BA1 BA2 (PA) BA1 BA2 (PA) tAS tACC tAH tAS tAHT tCE CEf tOE tCEPH OE tGHWL tDF tOEH tWP WE tDS DQ Valid Output tDH Valid Intput (A0h) tDF Valid Output Valid Intput (PD) Valid Output Status Note : This is example of Read for Bank 1 and Embedded Algorithm (program) for Bank 2. BA1: Address of Bank 1. BA2: Address of Bank 2. 29 MB84VD22184FM/VD22194FM-70 * RY/BY Timing Diagram during Write/Erase Operations (Flash) CEf Rising edge of the last write pulse WE Entire programming or erase operations RY/BY tBUSY * RESET, RY/BY Timing Diagram (Flash) WE RESET tRP tRB RY/BY tREADY 30 MB84VD22184FM/VD22194FM-70 * Temporary Sector Unprotection (Flash) VCCf tVIDR tVCS tVLHT VID 3V 3V RESET CEf WE tVLHT tVLHT Program or Erase Command Sequence RY/BY Unprotection Period 31 MB84VD22184FM/VD22194FM-70 * Extended Sector Group Protection (Flash) VCCf tVCS RESET tVLHT tVIDR tWC Add tWC SGAx SGAx SGAy A0 A1 A6 CEf OE TIME-OUT tWP WE Data 60h 60h 40h 01h tOE SGAx : Sector Group Address to be protected SGAy : Next Group Sector Address to be protected TIME-OUT : Time-Out window = 250 s (Min) 32 60h MB84VD22184FM/VD22194FM-70 * Accelerated Program (Flash) VCCf tVACCR tVCS tVLHT VACC 3V 3V WP/ACC CEf WE tVLHT Program Command Sequence tVLHT RY/BY Acceleration period 33 MB84VD22184FM/VD22194FM-70 3. Erase and Programming Performance Limits Parameter Comments Typ Max Sector Erase Time 0.5 2.0 s Excludes programming time prior to erasure Word Programming Time 6.0 100 s Excludes system-level overhead Chip Programming Time 12.6 50 s Excludes system-level overhead 100,000 cycle Program/Erase Cycle 34 Unit Min MB84VD22184FM/VD22194FM-70 4 M SRAM for MCP 1. AC Characteristics * Read Cycle (SRAM) Parameter Symbol Value Min Max Unit Read Cycle Time tRC 70 -- ns Address Access Time tAA -- 70 ns Chip Enable (CE1s) Access Time tCO1 -- 70 ns Chip Enable (CE2s) Access Time tCO2 -- 70 ns Output Enable Access Time tOE -- 35 ns LB, UB to Output Valid tBA -- 70 ns Chip Enable (CE1s Low and CE2s High) to Output Active tCOE 5 -- ns Output Enable Low to Output Active tOEE 0 -- ns UB, LB Enable Low to Output Active tBE 0 -- ns Chip Enable (CE1s High or CE2s Low) to Output High-Z tOD -- 25 ns Output Enable High to Output High-Z tODO -- 25 ns UB, LB Output Enable to Output High-Z tBD -- 25 ns Output Data Hold Time tOH 10 -- ns Note: Test Conditions- Output Load:1 TTL gate and 30 pF Input rise and fall times: 5 ns Input pulse levels: 0.0 V to VCCs Timing measurement reference level Input: 0.5xVCCs Output: 0.5xVCCs 35 MB84VD22184FM/VD22194FM-70 * Read Cycle (SRAM) tRC Address tAA tOH tCO1 CE1s tCOE tOD tCO2 CE2s tOD tOE OE tODO tOEE LB, UB tBD tBA tBE tCOE DQ Note: WE remains HIGH for the read cycle. 36 Valid Data Output MB84VD22184FM/VD22194FM-70 * Write Cycle (SRAM) Parameter Symbol Value Min Max Unit Write Cycle Time tWC 70 -- ns Write Pulse Width tWP 50 -- ns Chip Enable to End of Write tCW 55 -- ns Address valid to End of Write tAW 55 -- ns UB, LB to End of Write tBW 55 -- ns Address Setup Time tAS 0 -- ns Write Recovery Time tWR 0 -- ns WE Low to Output High-Z tODW -- 25 ns WE High to Output Active tOEW 0 -- ns Data Setup Time tDS 30 -- ns Data Hold Time tDH 0 -- ns 37 MB84VD22184FM/VD22194FM-70 * Write Cycle *1 (WE control) (SRAM) tWC Address tAS tWP tWR WE tAW tCW CE1s CE2s tCW tBW LB, UB tOEW tODW DOUT *2 *3 tDS DIN *4 tDH Valid Data Input *4 *1 : If OE is HIGH during the write cycle, the outputs will remain at high impedance. *2 : If CE1s goes LOW (or CE2s goes HIGH) coincident with or after WE goes LOW, the output will remain at high impedance. *3 : If CE1s goes HIGH (or CE2s goes LOW) coincident with or before WE goes HIGH, the output will remain at high impedance. *4 : Because I/O signals may be in the output state at this Time, input signals of reverse polarity must not be applied. 38 MB84VD22184FM/VD22194FM-70 * Write Cycle *1 (CE1s control) (SRAM) tWC Address tAS tWP tWR WE tAW tCW CE1s CE2s tCW tBW LB, UB tBE tCOE tODW DOUT tDS DIN *2 tDH Valid Data Input *2 *1 : If OE is HIGH during the write cycle, the outputs will remain at high impedance. *2 : Because I/O signals may be in the output state at this Time, input signals of reverse polarity must not be applied. 39 MB84VD22184FM/VD22194FM-70 * Write Cycle *1 (CE2s Control) (SRAM) tWC Address tAS tWP tWR WE tCW CE1s tAW CE2s tCW tBW LB, UB tBE tCOE tODW DOUT tDS DIN *2 tDH Valid Data Input *2 *1 : If OE is HIGH during the write cycle, the outputs will remain at high impedance. *2 : Because I/O signals may be in the output state at this Time, input signals of reverse polarity must not be applied. 40 MB84VD22184FM/VD22194FM-70 * Write Cycle *1 (LB, UB Control) (SRAM) tWC Address tWP tWR WE tCW CE1s tCW CE2s tAW tAS tBW LB, UB tBE tCOE tODW DOUT tDS DIN *2 tDH Valid Data Input *2 *1 : If OE is HIGH during the write cycle, the outputs will remain at high impedance. *2 : Because I/O signals may be in the output state at this Time, input signals of reverse polarity must not be applied. 41 MB84VD22184FM/VD22194FM-70 2. Data Retention Characteristics (SRAM) Parameter Symbol Data Retention Supply Voltage Standby Current VDH = 3.0 V Chip Deselect to Data Retention Mode Time Recovery Time Value Unit Min Typ Max VDH 1.5 -- 3.1 V IDDS2 -- -- 10 A tCDR 0 -- -- ns tR tRC -- -- ns Note : tRC: Read cycle time * CE1s Controlled Data Retention Mode *1 VCCs Data Retention Mode 2.7 V VIH VDH *2 *2 VCCs - 0.2 V CE1s tR tCDR GND *1 : In CE1s controlled data retention mode, input level of CE2s should be fixed Vccs to Vccs-0.2 V or Vss to 0.2 V during data retention mode. Other input and input/output pins can be used between -0.3 V to Vccs+0.3 V. *2 : When CE1s is operating at the VIH Min level, the standby current is given by ISB1s during the transition of VCCs from VCCs Max to VIH Min level. * CE2s Controlled Data Retention Mode * VCCs Data Retention Mode 2.7 V VDH VIH tCDR tR CE2s VIL 0.2 V GND * : In CE2s controlled data retention mode, input and input/output pins can be used between -0.3 V to Vccs+0.3V. 42 MB84VD22184FM/VD22194FM-70 PIN CAPACITANCE Value Parameter Symbol Test Setup Unit Typ Max Input Capacitance CIN VIN = 0 11 14 pF Output Capacitance COUT VOUT = 0 12 16 pF Control Pin Capacitance CIN2 VIN = 0 14 16 pF WP/ACC Pin Capacitance CIN3 VIN = 0 21.5 26 pF Note : Test conditions TA = + 25C, f = 1.0 MHz HANDLING OF PACKAGE Please handle this package carefully since the sides of package create acute angles. CAUTION * The high voltage (VID) cannot apply to address pins and control pins except RESET. Exception is when autoselect and sector group protect function are used, then the high voltage (VID) can be applied to RESET. * Without the high voltage (VID) , sector group protection can be achieved by using "Extended Sector Group Protection" command. 43 MB84VD22184FM/VD22194FM-70 ORDERING INFORMATION MB84VD2218 4 FM -70 PBS PACKAGE TYPE PBS = 56-ball FBGA SPEED OPTION See Product Selector Guide Device Revision Bank Architecture 4 = 8Mbit / 24Mbit (Fixed Bank) DEVICE NUMBER/DESCRIPTION 32Mega-bit (2M x 16-bit) Dual Operation Flash Memory 3.0 V-only Read, Program, and Erase 4Mega-bit (256K x 16-bit) SRAM BOOT CODE SECTOR ARCHITECTURE 84VD2218 = Top sector 84VD2219 = Bottom sector 44 MB84VD22184FM/VD22194FM-70 PACKAGE DIMENSION 56-ball plastic FBGA (BGA-56P-M03) 9.000.10(.354.004) 1.2(.047) (Mounting height) MAX. 0.300.10 (Stand off) (.012.004) 7.000.10 (.276.004) 5.60(.220) 0.80 (.031) 8 7 6 5 4 3 2 1 5.60(.220) 0.80 (.031) K J H G F E D C B A INDEX-MARK AREA 56-o0.45 56-o.018 +0.10 -0.05 +.004 -.002 0.08(.003) M 0.10(.004) C 2002 FUJITSU LIMITED BGA560030Sc-1-1 Dimensions in mm (inches) Note: The values in parentheses are reference values. 45 MB84VD22184FM/VD22194FM-70 FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of Fujitsu semiconductor device; Fujitsu does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. Fujitsu assumes no liability for any damages whatsoever arising out of the use of the information. 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