BTD2568L3 - CYStech Electronics Corp.

CYStech Electronics Corp.

Spec. No. : C211L3

Issued Date : 2004.11.18

Revised Date : 2005.03.25

Page No. : 1/4

BTD2568L3 CYStek Product Specification

High Voltage NPN Epitaxial Planar Transistor

BTD2568L3

Features

• High BVCEO, 400V minimum

Symbol Outline

Absolute Maximum Ratings (Ta=25°C)

Parameter Symbol Limits Unit

Collector-Base Voltage VCBO 400 V

Collector-Emitter Voltage VCEO 400 V

Emitter-Base Voltage VEBO 6 V

Collector Current(DC) IC 300 mA

Collector Current(Pulse) ICP 1 A

Base Current IB 200 mA

Power Dissipation @TC=25°C Pd 5 W

Junction Temperature Tj 150 °C

Storage Temperature Tstg -55~+150 °C

BTD2568L3

B：Base

C：Collector

E：Emitter

SOT-223

B

C

E

CYStech Electronics Corp.

Spec. No. : C211L3

Issued Date : 2004.11.18

Revised Date : 2005.03.25

Page No. : 2/4

BTD2568L3 CYStek Product Specification

Characteristics (Ta=25°C)

Symbol Min. Typ. Max. Unit Test Conditions

BVCBO 400 - - V IC=100µA

BVCEO 400 - - V IC=1mA

BVEBO 6 - - V IE=10µA

ICBO - - 100 nA VCB=400V

ICES - - 100 nA VCE=360V

IEBO - - 100 nA VEB=5V

*VCE(sat)1 - - 0.2 V IC=20mA, IB=2mA

*VCE(sat)2 - - 0.4 V IC=50mA, IB=5mA

*VBE(sat)1 - - 0.8 V IC=10mA, IB=1mA

*VBE(sat)2 - - 0.9 V IC=50mA, IB=5mA

*VBE(on) - - 0.9 V VCE=10V, IC=50mA

hFE1 50 - - - VCE=10V, IC=1mA

hFE2 100 - 250 - VCE=10V, IC=10mA

*hFE3 100 - 250 - VCE=10V, IC=50mA

*hFE4 40 - - - VCE=10V, IC=100mA

fT 50 - - MHz VCE=10V, IC=10mA

Cob - 3.5 - pF VCB=20V, IE=0A, f=1MHz

*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%

CYStech Electronics Corp.

Spec. No. : C211L3

Issued Date : 2004.11.18

Revised Date : 2005.03.25

Page No. : 3/4

BTD2568L3 CYStek Product Specification

Characteristic Curves

Current Gain vs Collector Current

10

100

1000

1 10 100 1000

Collector Current ---IC(mA)

Current Gain---

HFE

VCE=10V

VCE=5V

Saturation Voltage vs Collector Current

10

100

1000

10000

1 10 100 1000

Collector Current ---IC(mA)

Saturation Voltage-(m

V

VCESAT

IC=10IB

IC=20IB

IC=30IB

Saturation Voltage vs Collector Current

100

1000

10000

1 10 100 1000

Collector Current--- IC(mA)

Saturation Voltage-(m

V

VBESAT@IC=10IB

Power Derating Curve

0

1

2

3

4

5

6

0 50 100 150 200

Ambient Temperature---TA(℃)

Power Dissipation---PD(

W

CYStech Electronics Corp.

Spec. No. : C211L3

Issued Date : 2004.11.18

Revised Date : 2005.03.25

Page No. : 4/4

BTD2568L3 CYStek Product Specification

SOT-223 Dimension

*: Typical

Inches Millimeters Inches Millimeters

DIM Min. Max. Min. Max.

A 0.1142 0.1220 2.90 3.10 G 0.0551 0.0709 1.40 1.80

B 0.2638 0.2874 6.70 7.30 H 0.0098 0.0138 0.25 0.35

C 0.1299 0.1457 3.30 3.70 I 0.0008 0.0039 0.02 0.10

D 0.0236 0.0315 0.60 0.80 a1 *13o - *13o -

E *0.0906 - *2.30 - a2 0 o 10 o 0

o 10 o

F 0.2480 0.2638 6.30 6.70

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: 42 Alloy; solder plating

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

321

F

B

A

C

D

E

G

Ha1

a2

I

Style: Pin 1.Base 2.Collector 3.Emitter

Marking:

3-Lead SOT-223 Plastic

Surface Mounted Package

CYStek Package Code: L3

CE