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CM25MD1-24H
CI Module
Three Phase Converter + Three Phase Inver ter
25 Amperes / 1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics Symbol CM25MD1-24H Units
Power Device Junction Temperature Tj-40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Mounting Torque, M4 Mounting Screws — 13 in-lb
Module Weight (Typical) — 100 Grams
Isolation Voltage, AC 1 minute, 60Hz VRMS 2500 Volts
Converter Sector
Repetitive Peak Reverse Voltage VRRM 1600 Volts
Recommended AC Input Voltage Ea440 Volts
DC Output Current IO25 Amperes
Surge (Non-repetitive) Forward Current IFSM 250 Amperes
I2t for Fusing I2t260A
2s
IGBT Inverter Sector
Collector-Emitter Voltage (G-E Short) VCES 1200 Volts
Gate-Emitter Voltage (C-E Short) VGES ±20 Volts
Collector Current IC25 Amperes
Collector Current (Pulse)* ICM 50 Amperes
Emitter Current** IE25 Amperes
Emitter Current** (Pulse)* IEM 50 Amperes
Maximum Collector Dissipation PC104 Watts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Converter Sector
Repetitive Reverse Current IRRM VR = VRRM, Tj = 150°C——8mA
Forw ard Voltage Drop VFM IF = 25A — — 1.5 Volts
Thermal Resistance (Junction-to-Fin) Rth(j-f) Per Diode — — 1.7 °C/W
IGBT Inverter Sector
Collector Cutoff Current ICES VCE = VCES, VGE = 0V — — 1 mA
Gate-Emitter Threshold Voltage VGE(th) VCE = 10V, IC = 2.5mA 4.5 6.0 7.5 Volts
Gate-Emitter Cutoff Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Collector-Emitter Saturation Voltage VCE(sat) VGE = 15V, IC = 25A, Tj = 25°C — 2.7 3.4 Volts
VGE = 15V, IC = 25A, Tj = 150°C — 2.45 — Volts
Input Capacitance Cies — — 5.0 nF
Output Capacitance Coes VGE = 0V, VCE = 10V — — 3.8 nF
Re verse Transf er Capacitance Cres — — 1.0 nF
Total Gate Charge QGVCC = 600V, IC = 25A, VGE = 15V — 125 — nC
Resistive Turn-on Time td(on) VGE1 = VGE2 = 15V, — — 100 nS
Load Rise Time trVCC = 600V, IC = 25A, — — 200 nS
Switching Turn-off Time td(off) Rg = 13Ω, — — 150 nS
Times F all Time tfResistive Load — — 350 nS
Emitter-Collector V oltage VEC IE = 25A, VGE = 0V — — 3.5 Volts
Reverse Recovery Time trr IE = 25A, VGE = 0V, — — 250 nS
Reverse Recovery Charge Qrr diE/dt = -50A/µs — 0.22 — µC
Thermal Resistance (Junction-to-Fin) Rth(j-f) Per IGBT — — 1.2 °C/W
Per FWDi — — 1.9 °C/W
*Pulse width and repetition rate should be such that device junction temperature does not exceed maximum rating.
**Characteristics of the anti-parallel emitter-collector free-wheel diode.