© 2008 IXYS CORPORATION, All rights reserved
GenX3TM 300V IGBT IXGH120N30C3
(TAB)
High speed PT IGBTs for
50-150kHz switching
Preliminary Technical Information
VCES = 300V
IC110 = 120A
VCE(sat) ≤ ≤
≤ ≤
≤ 2.1V
tfi(typ) =
86ns
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
BVCES IC= 250μA, VGE = 0V 300 V
VGE(th) IC= 250μA, VCE = VGE 2.5 5.0 V
ICES VCE = VCES 50 μA
VGE = 0V TJ = 125°C 1.0 mA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC= 120A, VGE = 15V 1.75 2.10 V
TJ = 125°C 1.70 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 300 V
VCGR TJ= 25°C to 150°C, RGE = 1MΩ 300 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C (limited by leads) 75 A
IC110 TC= 110°C (chip capability) 120 A
ICM TC= 25°C, 1ms 600 A
IATC= 25°C 120 A
EAS TC= 25°C 850 mJ
SSOA VGE= 15V, TVJ = 125°C, RG = 2Ω ICM = 240 A
(RBSOA) Clamped inductive load @ ≤ 300V
PCTC= 25°C 540 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum lead temperature for soldering 300 °C
TSOLD 1.6mm (0.062 in.) from case for 10s 260 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight 6g
DS99850B(01/08)
GCE
TO-247 AD
(IXGH)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
zHigh Frequency IGBT
zSquare RBSOA
zHigh avalanche capability
zDrive simplicity with MOS Gate
Turn-On
zHigh current handling capability
Applications
zPFC Circuits
zPDP Systems
zSwitched-mode and resonant-mode
converters and inverters
zSMPS
zAC motor speed control
zDC servo and robot drives
zDC choppers
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH120N30C3
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs IC = 60A, VCE = 10V, 50 83 S
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Cies 8700 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 715 pF
Cres 195 pF
Qg 230 nC
Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES 32 nC
Qgc 87 nC
td(on) 28 ns
tri 37 ns
Eon 0.23 mJ
td(off) 109 160 ns
tfi 86 ns
Eoff 0.73 1.3 mJ
td(on) 28 ns
tri 38 ns
Eon 0.37 mJ
td(off) 120 ns
tfi 113 ns
Eoff 0.88 mJ
RthJC 0.23 °C/W
RthCK 0.21 °C/W
Inductive Load, TJ = 125°°
°°
°C
IC = 60A, VGE = 15V
VCE = 200V, RG = 2Ω
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
Inductive Load, TJ = 25°°
°°
°C
IC = 60A, VGE = 15V
VCE = 200V, RG = 2Ω
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
© 2008 IXYS CORPORATION, All rights reserved
IXGH120N30C3
Fig. 1. Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
160
180
200
220
240
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4
V
CE - Volts
IC - Am peres
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 2 . Ex tend ed Output Characteristics
@ 2 5ºC
0
50
100
150
200
250
300
012345678910
V
CE - Volts
IC
-
Amperes
V
GE
= 15V
11V
7V
9V
5V
Fig. 3. Output Characteristics
@ 125ºC
0
20
40
60
80
100
120
140
160
180
200
220
240
0 0.4 0.8 1.2 1.6 2 2.4 2.8
V
CE - Volts
IC - A m peres
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 4. Depend enc e of V
CE(sat)
on
Junction Te m pe rature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-50 -25 0 25 50 75 100 125 150
T
J - Degrees Cen tigra de
VCE(sat) - Norm alized
V
GE
= 15V I
C
= 240A
I
C
= 120A
I
C
= 60A
Fig . 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5 6 7 8 9 101112131415
V
GE - Volts
VCE - V olts
I
C
= 240A
120A
60A
T
J
= 25ºC
Fig. 6 . Input Adm ittance
0
20
40
60
80
100
120
140
160
33.544.555.566.57
V
GE - Volts
IC
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH120N30C3
Fig. 7. Transcon ductance
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120 140 160
I
C
- Am peres
g f s -
Siemens
TJ
= - 40ºC
25ºC
125º C
Fig. 10. Reverse-Bias Safe Operating Area
0
40
80
120
160
200
240
280
50 100 150 200 250 300 350
V
CE
- Volts
I
C
- Am peres
TJ
= 125ºC
RG = 2Ω
dV / dT < 10V / ns
Fig. 1 1 . Maximum Transie nt The rmal Impedanc e
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Widt h - Secon ds
Z
(th)JC
- ºC / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200 240
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 150V
I
C
= 120A
I
G
= 10 m A
Fig. 9 . Capacitance
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Cies
Coes
Cres
© 2008 IXYS CORPORATION, All rights reserved
Fig. 12. Inductive Switching
Energy Loss vs. Gate Resistance
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
2345678910
R
G
- Ohms
E
off
- MilliJoules
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
E
on
- MilliJo u les
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 200V
I
C
= 60A
I
C
= 30A
Fig. 17. Inductive Turn-off
Switching Time s vs. Junction Te mpe rature
40
50
60
70
80
90
100
110
120
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Cen tigra de
t
f
- Nanoseconds
100
105
110
115
120
125
130
135
140
t d(off) - Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2Ω , V
GE
= 15V
V
CE
= 200V
I
C
= 60A, 30A
Fig. 15. Inductive Turn-off
Switching Times vs. Gate Resistance
60
70
80
90
100
110
120
130
140
150
2345678910
R
G
- Ohms
t f - Nanoseconds
80
120
160
200
240
280
320
360
400
440
t d(off)
- N anoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC,
VGE
= 15V
VCE
= 200V
I
C
= 60A
I
C
= 30A
Fig. 13. Induc tive Swiching
Energy Loss vs. Collector Current
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
30 40 50 60 70 80 90
I
C
- Am peres
E
off
- M illiJoules
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
E
on
- M illiJoules
E
off
E
on
- - - -
R
G
= 2Ω , V
GE
= 15V
V
CE
= 200V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Induc tive Swiching
Energy Los s vs. Junc tion Te mpe rature
0
0.2
0.4
0.6
0.8
1
1.2
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Cen tigra de
E
off
- MilliJo ules
0.0
0.1
0.2
0.3
0.4
0.5
0.6
E
on
- MilliJo ules
E
off
E
on
- - - -
R
G
= 2Ω , V
GE
= 15V
V
CE
= 200V
I
C
= 60A
I
C
= 30A
Fig. 16. Inductiv e Turn-off
Switching Tim es vs. Collector Current
40
60
80
100
120
140
160
30 40 50 60 70 80 90
I
C
- Amperes
t f
- N anoseconds
105
110
115
120
125
130
135
t d(off)
- Nan oseconds
t
f
t
d(off)
- - - -
R
G
= 2Ω , V
GE
= 15V
V
CE
= 200V
T
J
= 125ºC
T
J
= 25ºC
IXGH120N30C3
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH120N30C3
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
10
20
30
40
50
60
70
30 40 50 60 70 80 90
I
C
- Am peres
t
r
- N anoseconds
23
25
27
29
31
33
35
t
d(on)
- N anoseconds
t
r
t
d(on)
- - - -
R
G
= 2Ω
, V
GE
= 15V
V
CE
= 200V
T
J
= 25ºC, 125ºC
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Tempe rature
15
20
25
30
35
40
45
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanose conds
23
24
25
26
27
28
29
t
d(on)
- N anoseconds
t
r
t
d(on)
- - - -
R
G
= 2Ω
, V
GE
= 15V
V
CE
= 200V
I
C
= 30A
I
C
= 60A
Fig. 18. Induc tive Turn-on
Switching Times vs. Gate Resistance
15
20
25
30
35
40
45
50
55
60
2345678910
R
G
- Ohms
t
r
- N anoseconds
22
24
26
28
30
32
34
36
38
40
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 200V
I
C
= 30A
I
C
= 60A
IXYS REF: G_120N30C3(76)7-13-07
