Preliminary Technical Information GenX3TM 300V IGBT IXGH120N30C3 VCES IC110 VCE(sat) tfi(typ) High speed PT IGBTs for 50-150kHz switching Test Conditions Maximum Ratings VCES TJ = 25C to 150C 300 V VCGR TJ = 25C to 150C, RGE = 1M 300 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C (limited by leads) 75 A IC110 TC = 110C (chip capability) 120 A ICM TC = 25C, 1ms 600 A IA TC = 25C 120 A EAS TC = 25C 850 mJ SSOA (RBSOA) VGE = 15V, TVJ = 125C, RG = 2 Clamped inductive load @ 300V ICM = 240 A PC TC = 25C G 540 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 300 260 C C 1.13/10 Nm/lb.in. 6 g Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s Md Mounting torque z z z z z z z z Test Conditions BVCES VGE(th) IC IC ICES VCE = VCES VGE = 0V Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. = 250A, VGE = 0V = 250A, VCE = VGE IGES VCE = 0V, VGE = 20V VCE(sat) IC 300 2.5 TJ = 125C = 120A, VGE = 15V TJ = 125C (c) 2008 IXYS CORPORATION, All rights reserved 1.75 1.70 5.0 V V 50 1.0 A mA 100 nA 2.10 V V (TAB) C = Collector, TAB = Collector High Frequency IGBT Square RBSOA High avalanche capability Drive simplicity with MOS Gate Turn-On High current handling capability Applications z Symbol E Features z Weight C G = Gate, E = Emitter, z TL TSOLD 300V 120A 2.1V 86ns TO-247 AD (IXGH) Symbol TJ = = = z PFC Circuits PDP Systems Switched-mode and resonant-mode converters and inverters SMPS AC motor speed control DC servo and robot drives DC choppers DS99850B(01/08) IXGH120N30C3 Symbol Test Conditions (TJ = 25C, unless otherwise specified) Min. 83 S 8700 pF 715 pF Cres 195 pF Qg 230 nC 32 nC gfs IC = 60A, VCE = 10V, Pulse test, t 300s; duty cycle, d 2%. Characteristic Values Typ. Max. 50 Cies Coes Qge VCE = 25V, VGE = 0V, f = 1MHz IC = IC110, VGE = 15V, VCE = 0.5 * VCES Qgc 87 nC td(on) 28 ns 37 ns tri Eon td(off) tfi Inductive Load, TJ = 25C 0.23 IC = 60A, VGE = 15V 109 VCE = 200V, RG = 2 86 Eoff 0.73 td(on) 28 tri Eon td(off) tfi mJ 160 ns ns 1.3 mJ ns Inductive Load, TJ = 125C 38 ns 0.37 mJ IC = 60A, VGE = 15V 120 ns VCE = 200V, RG = 2 113 ns 0.88 mJ Eoff TO-247 AD Outline P e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 0.23 C/W RthJC RthCK 0.21 C/W PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGH120N30C3 Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 300 240 VGE = 15V 11V VGE = 15V 13V 11V 220 200 250 9V 9V 160 IC - Amperes IC - Amperes 180 140 120 7V 100 80 200 7V 150 100 60 40 50 5V 20 5V 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 1 2 3 240 6 7 8 9 10 1.4 V GE = 15V 13V 11V 220 200 V GE = 15V I C = 240A 1.3 9V VCE(sat) - Normalized 180 IC - Amperes 5 Fig. 4. Dependence of VCE(sat) on Junction Temperature Fig. 3. Output Characteristics @ 125C 160 7V 140 120 100 80 60 1.2 1.1 I C = 120A 1.0 0.9 I C = 60A 40 0.8 5V 20 0 0.7 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -50 -25 0 VCE - Volts 25 50 75 100 125 150 6.5 7 TJ - Degrees Centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 5.0 160 TJ = 25C 140 4.5 120 IC - Amperes 4.0 VCE - Volts 4 VCE - Volts VCE - Volts I C = 240A 120A 60A 3.5 3.0 2.5 TJ = 125C 25C - 40C 100 80 60 40 2.0 20 1.5 0 5 6 7 8 9 10 11 VGE - Volts (c) 2008 IXYS CORPORATION, All rights reserved 12 13 14 15 3 3.5 4 4.5 5 VGE - Volts 5.5 6 IXGH120N30C3 Fig. 7. Transconductance Fig. 8. Gate Charge 140 16 120 14 I G = 10 mA 12 100 TJ = - 40C 25C 125C 80 VGE - Volts g f s - Siemens VCE = 150V I C = 120A 60 40 10 8 6 4 20 2 0 0 0 20 40 60 80 100 120 140 0 160 40 80 I C - Amperes 120 160 200 240 QG - NanoCoulombs Fig. 9. Capacitance Fig. 10. Reverse-Bias Safe Operating Area 10,000 280 C ies 200 1,000 IC - Amperes Capacitance - PicoFarads 240 C oes 160 120 80 TJ = 125C C res RG = 2 dV / dT < 10V / ns 40 f = 1 MHz 0 100 0 5 10 15 20 25 30 35 50 40 100 150 VCE - Volts 200 250 300 350 VCE - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - C / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 IXGH120N30C3 Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance Fig. 13. Inductive Swiching Energy Loss vs. Collector Current 1.6 2.4 VCE = 200V 0.5 2.0 0.6 Eon RG = 2 , VGE = 15V 0.6 VCE = 200V 0.5 1.6 0.4 1.2 0.2 0.8 0.1 0.4 0.3 TJ = 125C - MilliJoules 0.3 ---- Eoff on 0.8 - MilliJoules 0.4 on E I C = 60A 1.0 0.7 E 0.6 ---- TJ = 125C , VGE = 15V 1.2 Eoff - MilliJoules Eon 2.8 Eoff - MilliJoules Eoff 1.4 0.7 0.2 I C = 30A 0.4 0.1 TJ = 25C 0.2 0.0 2 3 4 5 6 7 8 9 0.0 0.0 30 10 40 50 RG - Ohms ---0.5 130 on 0.3 0.4 0.2 - MilliJoules 0.6 t f - Nanoseconds 0.4 I C = 60A 360 120 320 110 280 I C = 60A 100 240 90 200 I C = 30A 80 0.2 400 t d(off) - Nanoseconds 0.8 E Eoff - MilliJoules 440 td(off) - - - TJ = 125C, VGE = 15V VCE = 200V tf 140 RG = 2 , VGE = 15V VCE = 200V 160 0.1 70 I C = 30A 0 25 35 45 55 65 75 85 95 105 115 0.0 125 120 60 80 2 3 4 5 160 135 80 115 TJ = 25C VCE = 200V 105 50 60 130 90 125 I C = 60A, 30A 80 120 70 115 60 110 50 105 110 40 40 t f - Nanoseconds 120 t d(off) - Nanoseconds TJ = 125C 135 RG = 2 , VGE = 15V 100 125 30 10 70 I C - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 80 90 40 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 100 125 t d(off) - Nanoseconds VCE = 200V td(off) - - - - tf 130 120 60 9 140 110 RG = 2 , VGE = 15V 100 8 120 td(off) - - - - tf 7 Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature Fig. 16. Inductive Turn-off Switching Times vs. Collector Current 140 6 RG - Ohms TJ - Degrees Centigrade t f - Nanoseconds 90 150 0.6 Eon 80 Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance 1.2 Eoff 70 I C - Amperes Fig. 14. Inductive Swiching Energy Loss vs. Junction Temperature 1 60 IXGH120N30C3 Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 19. Inductive Turn-on Switching Times vs. Collector Current 60 40 td(on) - - - - tr 55 70 38 40 32 I C = 60A 35 30 I C = 30A 30 28 25 26 20 24 15 22 2 3 4 5 6 7 8 9 VCE = 200V t r - Nanoseconds 34 33 RG = 2 , VGE = 15V 50 31 40 29 TJ = 25C, 125C 30 27 20 25 10 10 23 30 RG - Ohms t d(on) - Nanoseconds 45 t d(on) - Nanoseconds t r - Nanoseconds 60 36 VCE = 200V td(on) - - - - tr TJ = 125C, VGE = 15V 50 35 40 50 60 70 80 90 I C - Amperes 45 29 40 28 I C = 60A 35 27 td(on) - - - - tr RG = 2 , VGE = 15V 30 26 VCE = 200V 25 25 I C = 30A 20 t d(on) - Nanoseconds t r - Nanoseconds Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature 24 15 25 35 45 55 65 75 85 95 105 115 23 125 TJ - Degrees Centigrade IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: G_120N30C3(76)7-13-07