POWEREX b4YE D MB 7294621 OCO0b73b 278 MEPRX CM150DY-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Dual IGBTMOD Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 E Series Mo du le POWEREX INC OUTLINE ORAWING. mi eee CONRECTION DIAGRAM G2 OE? C2e1 tOE2 CI EL Gt CM150DY-12E Outline Drawing Dimensions Inches Millimeters A 3.70 94.0 B 3.150+0.01 80.0+0.25 Cc 1.89 48.0 D 1.18 Max. 30.0 Max. E 0.90 23.0 F 0.83 21.2 G 0.71 18.0 H 0.67 17.0 J 0.63 16.0 K 0.51 13.0 L 0.47 12.0 M 0.30 7.5 N 0.28 7.0 Pp 0.256 Dia. Dia. 6.5 Q 0.26 6.5 R M65 Metric M5 s$ 0.16 40 CM150DY-12E Dual IGBTMOD E-Series Module 150 Amperes/600 Volts 150 Amperes/600 Volts Description: Powerex IGBTMOD Modules are designed for use in switching applications. Each module con- sists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-con- nected super-fast recovery free- wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: [-] Low Drive Power CL) Low VcE\sat) Discrete Super-Fast Recovery (150ns) Free-Wheel Diode O O High Frequency Operation (15-20kHz) O Isolated Baseplate for Easy Heat Sinking Applications: {| AC Motor Control [1 Motion/Servo Control CL] UPS [] Welding Power Supplies [] Laser Power Supplies Ordering information: Example: Select the complete part module number you desire from the table below -i.e. CM150DY-12E is a 600V (VcEs), 150 Ampere Dual IGBTMOD Power Module. Type Current Rating Vces Amperes Volts (x 50) CM 150 12 E-51POWEREX POWEREX INC Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 CM1S50DY-12E Dual iGBTMOD E-Series Module 150 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified BYE D MM ?294b21] 0006737 104 MEPRX Ratings Symbol CM150DY-12E Units Junction Temperature Tj ~40 to 150 i @} Storage Temperature Tstq 40 to 125 C Collector-Emitter Voltage (G-E SHORT) Voces 600 Volts Gate-Emitter Voltage VaeEsS +20 Volts Collector Current fe 150 Amperes Peak Collector Current lou 300 Amperes Diode Forward Current lIEM 150 Amperes Diode Forward Surge Current lEM 300" Amperes Power Dissipation Py 600 Watts Max. Mounting Torque M5 Terminal! Screws - 17 in-Ib Max. Mounting Torque M6 Mounting Screws - 26 in-Ib Module Weight (Typical) = 270 Grams V Isolation VamMs 2500 Volts * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditians Min. Typ. Max. Units Collector-Cutoff Current Ices Voce = Vces. Voge = OV - - 1.0 mA Gate Leakage Current IGES VGeE = Vaes: Voge = OV ~ - 0.5 uA Gate-Emitter Threshold Voltage VGEtth) Io = 15mMA, Vor = 10V 3.0 4.0 6.0 Volts Collector-Emitter Saturation Voltage VCE(sat) Ico = 150A, Veg = 15V = 27 3.5** Volts Ig = 150A, Voge = 15V, T) = 150C - 2.7 - Volts Total Gate Charge Qg Vog = 300V, Ig = 150A, Vag = 15V - 750 - nc Diode Forward Voltage Vem Ig = 150A, Vas = 0V = - 2.5 Volts ** Puise width and repetition rate should be such that device junction temperature rise 1s negligible Dynamic Electrical Characteristics, Tj= 25 C unless otherwise specitied Characteristics Symbol Test Conditions Min Typ. Max. Units Input Capacitance Cies - ~ 30 nF Output Capacitance Coes VGeE = OV, Voce = 10V, f = 1MHz - - 9 nF Reverse Transfer Capacitance Cres - - 6 nF Resistive Turn-on Delay Time tdion) - - 400 ns Load Rise Time tr Voc = 300V, Iq = 150A, _ 700 ns Switch Times _Turn-off Delay Time tarot) VGE1 = VGE2 = 15V. Rg = 4.20 - ~ 600 ns Fall Time tf - - 350 sns Diode Reverse Recovery Time ter Ig = 150A, dic/dt = -300A/us - - 200 ns Diode Reverse Recovery Charge Orr IE = 150A, dig/dt = -300A/us - 2.0 - pe Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rthi(j-c) Per IGBT - - 0.21 CW Thermal Resistance, Junction to Case Pihij-c) Per Free Wheel Diode - - 0.47 C/W Contact Thermal Resistance Renie-f) Per Half Module - = 0.13 C/Wyy bye D MM 7294621 00067346 O4O MMPRX Vi POWEREX INC a Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP 107, 72003 Le Mans, France (43) 41.14.14 CM150DY-12E Dual IGBTMOD E-Series Module 150 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 400 400 5 Vgg = 10V _ Veg =15V a g wmme F, = 25C e ~. oo 4 320 & 320 mee T, = 125C 3 4 = - a = 240 = 240 =z 3 z a a zo & r 6x 5 g 55 & 160 e 160 iu 22 e 88 w w 3 80 a 80 g 1 8 5 0 0 0 0 2 4 6 8 10 0 4 8 12 16 20 9 80 160 240 320 400 COLLECTOR-EMITTER VOLTAGE, Voge (VOLTS) GATE-EMITTER VOLTAGE, Veg. (VOLTS) COLLECTOR-CUARENT, |, (AMPERES) COLLECTOR-EMITTER FREE-WHEEL DIODE SATURATION VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS CAPACITANCE VS. Vcg (TYPICAL) (TYPICAL) (TYPICAL) 10 103 105 a T, = 25C T, = 25C 38 5 & = Ig = 300A ~ ag w & wo 5 o 4 Eu z g 10 => 6 i 9 ou Ig = 150A 2 A Oa Z 102 oO nS FS w ad > 4 3 g 88 & = 103 = wi Oo E E 2 3 wo 0 101 102 0 4 8 12 16 20 o 08 1.6 2.4 3.2 4.0 10-1 100 101 102 GATE-EMITTER VOLTAGE Vge (VOLTS) EMITTER COLLECTOA VOLTAGE, Vgc (VOLTS) COLLECTOR-EMITTER VOLTAGE Vog (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS REVERSE RECOVERY CHARACTERISTICS (TYPICAL) (TYPICAL) GATE CHARGE, Vge 103 103 102 dvdt = -300A/usec yo Ig = 150A es - & . - 2 3 z = =u g eS Voc = 200V w - wow 2 z zg g 192 102 01 384 F 3 > x 5 a > oO Ww w 5S ec > Ww & 4 SE Voc = 300V = 2 & Voge = t15V 3 woul Rg =422 * os T= 125C | G 401 101 100 101 102 103 101 102 403 0 200 400 600 800 1000 COLLECTOR CURRENT, I, (AMPERES) EMITTER CURRENT |, (AMPERES) GATE CHARGE QO (nC) E-53b4YE D MM 7294621 0006739 Ta? MPRX POWEREX POWEREX INC nd Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP 107, 72003 Le Mans, France (43) 41.14.14 CM150DY-12E Dual IGBTMOD E-Series Module 150 Amperes/600 Volts TRANSIENT THERMAL TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS IMPEDANCE CHARACTERISTICS (IGBT) (DIODE) 1 1 2 1 1 = o = ary ao = Oo ae ao Single Pulse To = 25C Per Unit Base = Pulse Te = 25C Per Unit Base = = Qo o 109 RMALIZED TRANSIENT THERMAL IMPEDANCE, Zing) AMALIZED TRANSIENT THERMAL IMPEDANCE Zing) =a Qo = 10-1 10-1 1071 10-2 10-2 10-2 10-2 8 103 10-3 3 10-3 10-3 2 yy * Ryy * (NORMALIZED VALUE) 105 10-4 10-3 Zin = Pen * (NORMALIZED VALUE) 10-5 10-4 103 TIME,{s) TIME {s) SWITCHING TIME TEST CIRCUITS & WAVEFORMS FLoAD B \E +L Yoo 7 Tt Yoc +VGE1 +VGe1 et _ __ VGE2 -VaE2 i} } RESISTANCE LOAD SWITCHING TEST CIRCUIT HALF-BRIDGE SWITCHING TEST CIRCUIT VGE p 90% S A _ ' 0 > \ br dig/dt > Is s#+ 90% I 10% r 08 te 0 >t tavon) oon i Orr 72 SWITCHING TIME TEST WAVEFORMS trr, Qr WAVEFORMS