ZZ | ACT-PS512K8 | High oe | S peed Ic SRAM Plastic Path Features m= Low Power Monolithic CMOS 512K x 8 SRAM = Operating Temperature Range e Full Military (-55C to +125C) e Industrial (-40C to +85C) = Burn-in and Temperature Cycle Available m 10, 12, 15,17, 20 & 25ns Access Times mg +5V Power Supply g Industry Standard Pinouts e Center Power / Ground Pins a TTL Compatible I/O # 3.3V Device I/O Interfacing mg JEDEC Standard 36 pin Plastic SOJ Package e 36 Lead, .93" x .405" x 0.148 Small Outline J lead (SOU), Aeroflex code# "L2" mg Fully Static Operation e No Clocks or Refresh Required (\EROFLEX CIRCUIT TECHNOLOGY www.aeroflex.com Block Diagram SOu (L2) CE WE OE Ao - A18 - Vss 512Kx8 t 1/00-7 Vec 4 Pin Description /Oo-7 Data /O Ao-18 Address Inputs WE Write Enable CE Chip Enable OE Output Enable Vec Power Supply Vss Ground NC Not Connected General Description The ACT-PS512K8 is a Plastic High Speed, 4 Megabit (4,194,304 bits) CMOS Monolithic SRAM organized as 524,288 words by 8 bits. Designed for high-speed, high density, high reliablility, mass memory and fast cache system applications. The plastic monolithic is input and output TTL compatible. Writing is executed when the write enable (WE) and chip enable (CE) inputs are low. Reading is accomplished when WE is high and CE and output enable (OE) are both low. Access time grades of 10ns 12ns, 15ns, 17ns, 20ns and 25ns are standard. (jeroflex Circuit Technology - Advanced Multichip Modules SCD3764 REV A 6/2/98Absolute Maximum Ratings Symbol Parameter MINIMUM MAXIMUM Units To Case Operating Temperature -55 +125 C Tste Storage Temperature -65 +150 C Pp Maximum Package Power Dissipation 1.0 W Ve Maximum Signal Voltage to Ground -0.5 Veco + 0.5 Vv Voc Power Supply Voltage -0.5 +7.0 V Recommended Operating Conditions Symbol Parameter Minimum Maximum Units Voc Power Supply Voltage +4.5 +5.5 V Vss Ground 0 0 V Vin Input High Voltage +2.2 Voc t+ 0.5 V Vit Input Low Voltage -0.5 +0.8 V To Operating Temperature (Military) -55 +125 C To Operating Temperature (Industrial) -40 +85 C Truth Table Mode Standby Output Disable Read Write Capacitance Data I/O High Z High Z Data OUT Data IN Supply Current (Vin & Vout = OV, f = 1MHz, Tc = 25C, unless otherwise noted, Guaranteed but not tested) Symbol Parameter Maximum Units Cin Input Capacitance (Ao.1g, WE & OE) 6 pF Cout Output Capacitance (I/O9.7 & CE) 8 pF DC Characteristics (Vcc = 5.0V, Vss = OV, Tc = -55C to +125C or -40C to +85C) Parameter Sym Conditions Min Max Units Input Leakage Current ltt | Veco = Max, Vin = Vgg to Veo -10 +10 HA Output Leakage Current | ILo | CE = Viy, OE = Vin, Vout = Veg to Voc -10 +10 LA Operating Supply Current] loc | CE = Vi, OE = Viy,f =5MHz,Vec=5.5V 130 mA Standby Current Isp |CE = Viy, OE= Viyq, f =5MHz,Vcc=5.5V 20 mA Output Low Voltage Vor | lop = 8 mA, Vcc = 4.5V 0.4 V Output High Voltage Vou | low = -4 mA, Vec = 4.5V 2.4 Vv Note: DC Test conditions: VIL = 0.3V, VIH = Vcc - 0.3V. Aeroflex Circuit Technology SCD3764 REV A 6/2/98 Plainview NY (516) 694-6700AC Characteristics (Vcc = 5.0V, Vss= OV, Tc = -55C to +125C or -40C to +85C) Read Cycle Parameter Sym 010 012 015 017 020 025 Units Min Max] Min Max}|Min Max}|Min Max]|Min Max] Min Max Read Cycle Time trac | 10 12 15 17 20 25 ns Address Access Time tana 10 12 15 17 20 25 ns Chip Enable Access Time tack 10 12 15 17 20 25 ns Output Hold from Address Change tou 3 3 3 3 4 5 ns Output Enable to Output Valid log 5 6 7 8 10 12 ns Chip Enable to Output in Low Z (1) tecz |] 3 3 3 3 3 3 ns Output Enable to Output in Low Z(1) | torz] 0 0 0 0 0 ns Chip Deselect to Output in High Z (1) | tcnz 6 10 ns Output Disable to Output in High Z (1)] tonz 6 10 ns Note 1. Guaranteed by design, but not tested Write Cycle Parameter Sym 010 012 015 017 020 025 Units Min Max] Min Max|Min Max|Min Max]|Min Max] Min Max Write Cycle Time twe 10 12 15 17 20 25 ns Chip Enable to End of Write tow 7 8 10 12 13 15 ns Address Valid to End of Write taw 7 8 10 12 13 15 ns Data Valid to End of Write tow 5 6 8 8 9 10 ns Write Pulse Width twp 7 8 10 12 13 15 ns Address Setup Time tas 0 0 a) a) 0 0 ns Address Hold Time taH 0 0 0 0 0 ns Output Active from End of Write (1) tow 3 3 3 3 4 5 ns Write to Output in High 2 (1) twuz 5 6 7 8 8 10 ns Data Hold from Write Time toy 0 0 0 0 0 0 ns Note 1. Guaranteed by design, but not tested Data Fetention Electrical Characteristics ( Special Order Only) Vcc = 5.0V, Vss= OV, Tc = -55C to +125C or -40C to +85C) Parameter Sym Test Conditions . All Speeds Units Min Typ Max Vcc for Data Retention Vor CE = Vec 0.2V 2 5.5 V Data Retention Current locpr1 Voc = 38V 0.5 2.0 mA 3 Aeroflex Circuit Technology SCD3764 REV A 6/2/98 Plainview NY (516) 694-6700Timing Diagrams SRAM Read Cycle Timing Diagrams Read Cycle 1 (SCE = OE = VIL, SWE = VIH) tre Data Valid Ao-18 AA Duo Previous Data Valid Read Cycle 2 (SWE = Vi) tre | Ao-18 MK a TAA SCE tace TCHZ telz SEE NOTE __ SEE NOTE OE TOHZ toe SEE NOTE toLz > SEE NOTE Duo High Z Data Valid UNDEFINED [| DONT CARE Write Cycle Timing Diagrams Write Cycle (SWE Controlled, OE = VIH) Ao-18 Duo Ao-18 S mi Duo VY TWHZ SEE NOTE x Te c Wo 7 k tow>| 1DH Data Valid Note: Guaranteed by design, but not tested. AC Test Circuit Current Source | Io To Device Under Test Vz ~ 1.5 V (Bipolar Supply) CL=50 pF Tt lou Current Source Notes: AC Test Conditions Parameter Typical Units Input Pulse Level 0-3.0 Vv Input Rise and Fall 5 ns Input and Output Timing Reference Level 1.5 Vv 1) VZis programmable from -2V to +7V. 2) IOL and IOH programmable from 0 to 16 mA. 3) Tester Impedance ZO = 75Q. 4) VZ is typically the midpoint of VOH and Vor. 5) IOL and IOH are adjusted to simulate a typical resistance load circuit. 6) ATE Tester includes jig capacitance. Aeroflex Circuit Technology 4 SCD3764 REV A 6/2/98 Plainview NY (516) 694-6700Pin Numbers & Functions 36 Pins SOJ Function Pin # Function Ao 19 NC Al 20 A1o A2 21 Att A3 22 A12 A4 23 A13 CE 24 A14 25 1/04 26 /O5 27 Vcc 28 Vss 29 1/06 30 1/07 WE 31 OE 32 A15 A6 33 A16 A7 34 A17 35 A18 Ag 36 NC Package Outline "L2" SOJ Package, 36 Leads 23.62 (.930) 36 23.37 (.920) 19 ROLE ELIE Lee | 11.30 (.445) 11.05 (.435) O 10.29 (.405) 9.65 (.380) 10.03 (.395) 9.14 (.360) { WO WOOO 1 18 r>| ~ .69 | (.027) MIN | 3.76 (.148) MAX | | L_ +.10 [= [.004 MAX | 43 0.95 | |< 1.27 <_ -.05 TYP (.037) (.050) "YP (.0177:094) All dimensions in inches Dimensions in millmeters mm Dimensions in inches (.xxx) Aeroflex Circuit Technology 5 $CD3764 REV A 6/2/98 Plainview NY (516) 694-6700(\EROFLEX othe een Peery Ordering Information (Typical) Model Number Options Speed Package ACT-PS512K8N-010L2I None 10ns 36 Lead SOJ ACT-PS512K8W-012L21 Burn-in 12ns 36 Lead SOJ ACT-PS512K8X-015L2T Temp Cycle 15ns 36 Lead SOJ ACT-PS512K8Y017L2T Temp Cycle & Burn-in 17ns 36 Lead SOJ ACT-PS512K8Y020L2T Temp Cycle & Burn-in 20ns 36 Lead SOJ ACT-PS512K8Y025L2T Temp Cycle & Burn-in 25ns 36 Lead SOJ Aeroflex Circuit Technology Plastic Path Memory Type S = Plastic SRAM Memory Depth, Locations Memory Width, Bits Part Number Breakdown ACT- PS 512K 8 N- 010 L2 T ___! |] Options N= None W = Burn-in * X = Temperature Cycle * Y = Burn-in & Temperature Cycle * Electrical Testing | = Industrial Temp, -40C to +85C T = Military Temp, -55C to +125C Package Type & Size L2 = 36 Pin Plastic SOJ * Screened to the test methods of MIL-STD-883 Memory Speed, ns 010 = 10ns 012 = 12ns 015 = 15ns 017 =17ns 020 = 20ns 025 = 25ns Aeroflex Circuit Technology 35 South Service Road Plainview New York 11830 Telephone: (516) 694-6700 FAX: (516) 694-6715 Toll Free Inquiries: 1-(800) 843-1553 Aeroflex Circuit Technology SCD3764 REV A 6/2/98 Plainview NY (516) 694-6700