HARRIS SEMICONDUCTOR HCS109MS Radiation Hardened Dual JK Flip Flop aD September 1995 Features 3 Micron Radiation Hardened SOS CMOS Total Dose 200K RAD (Si) Pinouts 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T16, LEAD FINISH C + SEP Effective LET No Upsets: >100 MEV-cm2/mg TOP VIEW + Single Event Upset (SEU) Immunity < 2 x 10 Errors/ Rt 5 to} vec Bit-Day (Typ) aE 5] R2 + Dose Rate Survivability: >1 x 101? RAD (Si)/s Kt [& pay 2 40 . crt [4] 3] K2 + Dose Rate Upset >10" RAD (Si}/s 20ns Pulse 1 GF Fa] cp + Cosmic Ray Upset Immunity < 2 x 10 Errors/Bit-Day at [Fy FT] S2 + Latch-Up Free Under Any Conditions enp [Bi] ra] Gz + Military Temperature Range: -55C to +125C Significant Power Reduction Compared to LSTTL ICs + DC Operating Voltage Range: 4.5V to 5.5V Input Logic Levels - VIL = 30% of VCC Max 16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F16, LEAD FINISH C TOP VIEW - VIH = 70% of VCC Min m ve 6 vee J 2 15 R2 * Input Current Levels li < 5A at VOL, VOH K1 3 14 J2 cP1 4 13 K2 Description a 5 12 cPp2 The Harris HCS109MS is a Radiation Hardened Dual JK Flip at 8 " $2 Flop with set and reset. The flip flop changes state with the a1 7 10 a2 positive transition of the clock (CP1 or GP2). GND 3 9 a2 The HCS109MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HGS109MS is supplied in a 16 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix). Ordering Information PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE HCS108DMSR -5BC to +125C Harris Class S Equivalent 16 Lead SBDIP HCS10SKMSR -55C to +125C Harris Class S Equivalent 16 Lead Ceramic Flatpack HCS108D/Sample 425C Sample 16 Lead SBDIP HCS109K/Sample 425C Sample 16 Lead Ceramic Flatpack HG310SHMSR 425C Die Die CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper |.C. Handling Procedures. Copyright Harris Corporation 1995 1 Spec Number File Number 518748 2466.2HCS109MS Functional Diagram vec o 8 GNDo TRUTH TABLE INPUTS OUTPUTS s R cP J K Q Q L H x x x H L H L x x x L H L L x x x H* H* H H _f- L L L H H H _f- H L Toggle H H _f- L H No Change H H f H H H L H H L Xx Xx No Change *Unpredictable and unstable condition if both S and R go high simultaneously L= Logic Level Low H = Logic Level High _/ = Transition from Low to High Level Spec Number 518748Specifications HCS109MS Absolute Maximum Ratings Supply Voltage... 2.2.0.0. 0.000.002 ee eee -0.5V to +7.0V Input Voltage Range, All Inputs ............. -0.5V to VCC 40.5V DC Input Current, Any One Input DC Drain Current, Any One Output. ... 0.0... . ceca eee aes +25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG)........... -65C to +150C Lead Temperature (Soldering 10sec).................. 4+265C Junction Temperature (TU)... ee 4175C ESD Classification .... 0.0.0... ee Class 1 Reliability Information Thermal Resistance BA Bie SBDIP Package.................... 73CAN 24C AW Ceramic Flatoack Package........... 114C/hW 29C /W Maximum Package Power Dissipation at +125C Ambient SBDIP Package......... 0.0.0... 0.68W Ceramic Flatpack Package If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package..................0 0002000 eee 13.7mW/C Ceramic Flatpack Package CAUTION: As wiih all semiconductors, siress listed under Absolute Maximum Ratings may De applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under Electrical Performance Characteristics are the only conditions recommended for satisfactory device operation.. Operating Conditions Supply Voltage... 6... eee +4.5V to +5.5V Input Rise and Fall Times at 4.5 VCC (TR, TF)........ 500ns Max Operating Temperature Range (Ta)............ -55C to +125C 0.0V to 30% of VCC bee ee 70% of VCC to VCC Input Low Voltage (VIL)..........0.0..000. Input High Voltage (VIH) TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP LIMITS (NOTE 1) A SUB- PARAMETER SYMBOL CONDITIONS GROUPS TEMPERATURE MIN MAX | UNITS Quiescent Current ICC VGC = 5.5V, 1 4+25C 20 pA VIN = VCC or GND 2,3 +125C, -55C 400 pA Output Current IOL VCC = 4.5V, VIH = 4.5V, 1 425C 48 mA (Sink) VOLT = 0.4V, VIL = OV 2,3 +125C, -55C 40 mA Output Current IOH VCC = 4.5V, VIH = 4.5V, 1 +25C -4.8 mA (Source) VOUT = VCC -0.4, VIL = OV 2,3 +125C, -55C -4.0 mA Output Voltage Low VOL VOC = 4.5V, VIH = 3.15V, 1,2,3 425C, +125C, -55C O14 Vv IOL = 50pA, VIL = 1.35V VGC = 5.5V, VIH = 3.85V, 1,2,3 425C, +125C, -55C 0.1 Vv IOL = 50pA, VIL = 1.65V Output Voltage High VOH VGC = 4.5V, VIH = 3.15V, 1,2,3 425C, +125C, -55C VCC - Vv IGH = -50uA, VIL = 1.35V -0.1 VCC = 5.5V, VIH = 3.85V, 1,2,3 425C, +125C, -55C VCC - Vv IGH = -50uA, VIL = 1.65V -0.1 Input Leakage lIN VOC = 5.5V, VIN = VOC or 1 425C +0.5 yA Current GND 2,3 +125C, -55C +5.0 pA Noise Immunity FN VCC = 4.5V, 7, 8A, 8B 425C, +125C, -55C Functional Test VIH = 0.70(VCC), VIL = 0.30(VCC) (Note 2) NOTES: 1. All voltages reference to device GND. 2. For functional tests, VO = 4.0V is recognized as a logic 1, and VO <0.5Vis recognized as a logic 0. Spec Number 518748Specifications HCS109MS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTES 1, 2) GROUP A LIMITS PARAMETER SYMBOL CONDITIONS SUBGROUPS TEMPERATURE MIN MAX UNITS CP to Q, TPLH VCC = 4.5V 9 +25C VGC = 4.5V 10,11 +125C, -55C VCC = 4.5V 9 425C 26 ns 30 ns 30 ns VCC = 4.5V 10,11 +125C, -55C 35 ns VCC = 4.5V i) +25C 19 ns VOC = 4.5V 10,11 4+125C, -55C 23 ns VGC = 4.5V 9 4+25C 31 ns VCC = 4.5V 10,11 4+125C, -55C 33 ns VGC = 4.5V 9 4+25C 31 ns VCC = 4.5V 19,11 +125C, -55C 33 ns VCC = 4.5V g +25C VCC = 4.5V 10,11 +125C, -55C 31 ns Oe ee ee ee Oe ke ee ee es ek 33 ns NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500%, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX | UNITS Capacitance Power cPD VOC = 5.0V, f = 1MHz 1 425C - 41 pF Dissipation 1 +125C, -55C - 56 pF Input Capacitance VOC = 5.0V, f = 1MHz +25C - 10 pF +125C, -55C - 10 pF Output Transition VCC = 4.5V +25C - 15 Time +125C, -55C ; 22 Max Operating VCC = 4.5V +25C - 30 F requency +125C, -55C - 20 Setup Time JK to VCC = 4.5V +25C cP 4+125C, -55C Hold Time JK to GP VCC = 4.5V +25C 4+125C, -55C Removal Time R, VCC = 4.5V 425C Stop +125C, -B5C Pulse Width CP VOC = 4.5V 425C +125C, -55C Pulse Width R, S VCC = 4.5V +25C +125C, -55C NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. Spec Number 518748Specifications HCS109MS TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K RAD LIMITS (NOTES 1, 2) PARAMETER SYMBOL CONDITIONS TEMPERATURE MIN MAX | UNITS Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND 425C 0.4 mA Output Current (Sink) IOL VOC = 4.5V, VIN = VOC or GND, +25C 40 mA VOUT = 0.4V Output Current IOH VCC = 4.5V, VIN = VCC or GND, 425C -4.0 mA (Source) VOUT = VCC -0.4V Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = 0.70(VCC), +25C 01 Vv VIL = 0.30(VCC), IOL = 50nA Output Voltage High VOH VCC = 4.5V and 5.5V, VIH = 0.70(VCC), +25C Vcc Vv VIL = 0.30(VCC), IOH = -50nA -0.4 Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25C +5 pA Noise Immunity FN VOG = 4.5V, VIH = 0.70(VCC), +25C Functional Test VIL = 0.30(VCC}, (Note 3) CP 10 QQ TPLH | VOC =4.5V +25C 2 30 ns TPHL VCC = 4.5V +25C 2 35 ns Sto Q TPLH | VOC =4.5V +25C 2 23 ns StoQ TPHL VCC = 4.5V +25C 2 33 ns RtoQ TPHL VCC = 4.5V +25C 2 33 ns RtoQ TPLH | VOC =4.5V +25C 2 33 ns NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. 3. For functional tests, VO > 4.0V is recognized as a logic 1, and VO < 0.5V is recognized as a logic 0. TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25C) GROUP B PARAMETER SUBGROUP DELTA LIMIT ICG 5 6A IGLAQH 5 -15% of 0 Hour Spec Number 518748Specifications HCS109MS TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS METHOD GROUP A SUBGROUPS READ AND RECORD Initial Test (Preburn-In) 100%/5004 1,7,9 Icc, IOL/H Interim Test 1 (Postburn-In} 100%/5004 17,9 ISG, IOL/H Interim Test 11 (Postburn-In) 100% /5004 1,7,9 Icc, IOL/H PDA 100%/5004 1,7, 9, Deltas Interim Test 111 (Postburn-In) 100%/5004 1,7,9 Icc, IOL/H PDA 100%/5004 1,7, 9, Deltas Final Test 100%/5004 2, 3, 8A, 8B, 10, 11 Group A (Note 1) Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Group B Subgroup B-5 Sample/5005 1,2, 3,7, 8A, 8B, 9, 10,11, Deltas | Subgroups 1, 2, 3, 9, 10, 11, (Note 2) Subgroup B-6 Sample/5005 1,7,9 Group D Sample/5005 1,7,9 NOTES: 1. Alternate group A testing in accordance with method 5005 of MIL-STD-883 may be exercised. 2. Table 5 parameters only. TABLE 7. TOTAL DOSE IRRADIATION TEST READ AND RECORD CONFORMANCE GROUPS METHOD PRE RAD POST RAD PRE RAD POST RAD Group E Subgroup 2 5005 1,7,9 Table 4 1,9 Table 4 (Note 1) NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 1/2VCC=3V+0.5V VCC =6V+0.5V 50kHz 25kHz STATIC BURN-IN | TEST CONNECTIONS (Note 1) 6,7, 9, 10 1-5,8,11-15 STATIC BURN-IN Il TEST CONNECTIONS (Note 1) 6, 7, 9, 10 8 - 1-5,11-16 DYNAMIC BURN-IN TEST CONNECTIONS (Note 2) 8 6, 7, 9,10 1,5, 11, 15, 16 2,3, 13, 14 NOTES: 1. Each pin except VCC and GND will have a resistor of 10KQ + 5% for static burn-in 2. Each pin except CC and GND will have a resistor of 1K@ + 5% for dynamic burn-in TABLE 9. IRRADIATION TEST CONNECTIONS OPEN GROUND VOC = 5V + 0.5V 6, 7,9, 10 8 1-5,11-16 NOTE: Each pin except VCC and GND will have a resistor of 47K& + 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures. Spec Number 518748HCS109MS Harris Space Level Product Flow - MS Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Methed 2011 Sample - Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection, Methed 2010, Condition A 100% Temperature Cycle, Method 1019, Gondition , 10 Cycles 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% PIND, Method 2020, Condition A 100% External Visual 100% Serialization 100% Initial Electrical Test (TO) 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125C min., Method 1015 NOTES: 100% Interim Electrical Test 1 (71) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125G min., Method 1015 100% Interim Electrical Test 2 (T2) 100% Delta Calculation (T0-T2) 100% PDA 1, Method 5004 (Notes 1and 2) 100% Dynamic Bum-In, Condition D, 240 hrs., +125C or Equivalent, Method 1015 100% Interim Electrical Test 3 (T3) 100% Delta Calculation (TO-T3) 100% PDA 2, Method 5004 (Note 2) 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 3) 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5) 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents: X-Ray report and film. Includes penetrometer measurements. by an authorized Quality Representative. Cover Sheet (Harris Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Harris Part Number, Lot Number, Quantity). Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on tile at Harris. Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). Lot Serial Number Sheet (Good units serial number and lot number). Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformanceis signed Spec Number 518748HCS109MS AC Timing Diagrams AC Load Circuit BUT TEST POINT VIH VS INPUT c= > AL a VIL TPLH TPHL VOH ee CL = 50pF RL = 5000 J VS OUTPUT VOL TTLH TTHL WOH one cece cece eee be tetees 80% 80% VOL OUTPUT AC VOLTAGE LEVELS PARAMETER Hes UNITS VCC 4.50 Vv VIH 4.50 Vv V8 2.25 Vv VIL 0 Vv GND 0 Vv Pulse Width, Setup, Hold Timing Diagram | Load Circuit Positive Edge Trigger put TEST POINT CP INPUT ....0.0cc cee VIH VS j VIL TH = Hold Time TSU = Setup Time TW = Pulse Width TSU TW PULSE WIDTH, SETUP, HOLD VOLTAGE LEVELS PARAMETER voc VIH VS Hs 4.50 4.50 2.25 id Q UNITS Vv a CL = 50pF RL = 5002 a 4 aA a - Spec Number 518748HCS109MS Die Characteristics DIE DIMENSIONS: 89 x 88 mils 2.25 x 2.24mm METALLIZATION: Type: AlSi 5 5 Metal Thickness: 11kA +1kA GLASSIVATION: Type: SiO, 5 5 Thickness: 13kA + 2.6kA WORST CASE CURRENT DENSITY: <2.0 x 10A/om? BOND PAD SIZE: 100um x 100um 4x4mils Metallization Mask Layout HGS109MS J Rl vcc (2) (1) (16) K14 (3) (15) R2 CP1 (4) (14) J2 S1 (5) (13) K2 Q1 (6) (12) CP2 _ (11) S2 Qi (7) GND Q2 Q2 NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask series for the HCS109 is TA14340A. Spec Number 518748