© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 250 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ250 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C90 A
IDM TC= 25°C, pulse width limited by TJM 360 A
IATC= 25°C45 A
EAS TC= 25°C3 J
PDTC= 25°C 960 W
TJ-55...+150 °C
TJM 150 °C
Tstg -55...+150 °C
TL1.6mm (0.063 in.) from case for 10s 300 °C
TSOLD Plastic body for 10s 260 °C
MdMounting torque (IXTK) 1.13/10 Nm/lb.in.
FCMounting Force (IXTX) 20..120 / 4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 250 V
VGS(th) VDS = VGS, ID = 3mA 2.0 4.5 V
IGSS VGS = ±20V, VDS = 0V ±200 nA
IDSS VDS = VDSS 50 μA
VGS = 0V TJ = 125°C 2.5 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25 , Note 1 33 mΩ
LinearL2TM Power
MOSFET w/Extended
FBSOA
IXTK90N25L2
IXTX90N25L2
N-Channel Enhancement Mode
Avalanche Rated
VDSS = 250V
ID25 = 90A
RDS(on) < 33mΩΩ
ΩΩ
Ω
DS100080(11/08)
G = Gate D = Drain
S = Source TAB = Drain
TO-264
GDS
GDS
PLUS247
(TAB)
(TAB)
Preliminary Technical Information
Features
zDesigned for linear operation
zInternational standard packages
zAvalanche rated
zGuaranteed FBSOA at 75°C
Advantages
•Easy to mount
•Space savings
•High power density
Applications
zSolid state circuit breakers
zSoft start controls
zLinear amplifiers
zProgrammable loads
zCurrent regulators
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTK90N25L2
IXTX90N25L2
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS= 10V, ID = 0.5 • ID25, Note 1 35 50 65 S
Ciss 23 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 2140 pF
Crss 360 pF
td(on) 50 ns
tr 175 ns
td(off) 40 ns
tf 160 ns
Qg(on) 640 nC
Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 125 nC
Qgd 385 nC
RthJC 0.13 °C/W
RthCS 0.15 °C/W
Safe Operating Area Specification
Symbol Test Conditions Characteristic Values
Min. Typ. Max.
SOA VDS = 250V, ID = 2.3A, TC = 75°C, Tp = 5s 575 W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 90 A
ISM Repetitive, pulse width limited by TJM 360 A
VSD IF = 45A, VGS = 0V, Note 1 1.5 V
trr 266 ns
IRM 23 A
QRM 3.0 μC
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IF = 45A, -di/dt = 100A/μs,
VR = 80V, VGS = 0V
TO-264 (IXTK) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM (IXTX) Outline
© 2008 IXYS CORPORATION, All rights reserved
IXTK90N25L2
IXTX90N25L2
Fig. 1. Outp ut C har acteri sti cs
@ 25ºC
0
10
20
30
40
50
60
70
80
90
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
V
DS
- Volt s
I
D
- A m p ere s
V
GS
= 20V
12V
10V
7
V
5
V
6
V
8
V
9
V
Fig. 2. Extended Output Ch aracteristics
@ 25º C
0
30
60
90
120
150
180
210
240
270
300
0 5 10 15 20 25 30
V
DS
- Volt s
I
D
- A mp e res
V
GS
= 20V
14V
12V
7
V
6
V
8
V
9
V
10
V
Fi g . 3. Ou tp u t C h ar acter i stic s
@ 125ºC
0
10
20
30
40
50
60
70
80
90
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V
DS
- Volts
I
D
- Am peres
V
GS
= 20V
12V
10V
9V
5
V
7V
6V
8
V
Fig. 4. RDS(on) Normalized to ID = 45A Valu e
vs. Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- N orm a lize d
V
GS
= 10V
I
D
= 90A
I
D
= 45A
Fig. 5. RDS(on) Normalized to ID = 45A Val ue
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0 20 40 60 80 100 120 140 160 180 200 220 240
I
D
- Amperes
R
DS(on)
- N ormal ize d
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 6. Maxim um Drain Curren t vs.
Case Temp er a tu r e
0
10
20
30
40
50
60
70
80
90
100
-50 -25 0 25 50 75 100 125 150
T
C
- Deg rees Centigrade
I
D
- A mpe re s
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTK90N25L2
IXTX90N25L2
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
3.54.04.55.05.56.06.57.07.58.08.5
V
GS
- Volts
I
D
- A mpe res
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
120
0 20 40 60 80 100 120 140
I
D
- Amperes
g
f s
- S ie men s
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
40
80
120
160
200
240
280
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V
SD
- Vo lts
I
S
- A m p ere s
T
J
= 125ºC
T
J
= 25ºC
Fi g . 10. Gate C h ar g e
0
2
4
6
8
10
12
14
16
0 100 200 300 400 500 600 700 800 900 1000
Q
G
- NanoCoulombs
V
GS
- V o lt s
V
DS
= 125V
I
D
= 45A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - P icoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maximu m Transi en t Ther mal
Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2008 IXYS CORPORATION, All rights reserved
IXTK90N25L2
IXTX90N25L2
IXYS REF: T_90N25L2(9R)12-01-08
Fig. 13. Fo rward-Bias Safe Operating Area
@ T
C
= 25ºC
1
10
100
1,000
10 100 1000
V
DS
- V o lts
I
D
- Amperes
TJ = 150ºC
TC = 25ºC
Single Puls e
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC 100ms
Fi g. 14. F o r w ar d -B i a s Safe Op erati n g Area
@ T
C
= 75ºC
1
10
100
1,000
10 100 1000
V
DS
- Volts
I
D
- Am pe re s
TJ = 150ºC
TC = 75ºC
Sing le Pulse
25µs
1ms
100µs
R
DS(on)
Limit
10ms
DC 100ms