Original Creation Date: 12/02/96
Last Update Date: 12/20/96
Last Major Revision Date: 12/02/96
MNLM103-3.3-H REV 0A0 MILITARY DATA SHEET
REFERENCE DIODE
General Description
The LM103 is a two-terminal monolithic reference diode electrically equivalent to a
breakdown diode. The device makes use of the reverse punch-through of double-diffused
transistors, combined with active circuitry, to produce a breakdown characteristic which
is ten times sharper than single-junction zener diodes at low voltages. Breakdown
voltages from 3.0V to 3.9V are available; and, although the design is optimized for
operation between 100uA and 1mA, it is completely specified from 10uA to 10mA. Noteworthy
features of the device are:
- Exceptionally sharp breakdown
- Low dynamic impedance from 10uA to 10mA
- Planar, passivated junctions for stable operation
- Low capacitance
The LM103, is useful in a wide range of circuit applications from level shifting to simple
voltage regulation. It can also be employed with operational amplifiers in producing
breakpoints to generate nonlinear transfer functions. Finally, its unique characteristics
recommend it as a reference element in low voltage power supplies with input voltages down
to 4V.
NS Part Numbers
LM103H-3.3-SMD*
LM103H-3.3/883
Industry Part Number
LM103
Prime Die
LM103
Controlling Document
7702807XA*
Processing
MIL-STD-883, Method 5004
Quality Conformance Inspection
MIL-STD-883, Method 5005
Subgrp Description Temp ( C)
o
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
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MILITARY DATA SHEET
MNLM103-3.3-H REV 0A0
(Absolute Maximum Ratings)
(Note 1)
Power Dissipation
(Note 2) 250mW
Reverse Current 20mA
Forward Current 100mA
Operating Temperature Range -55 C to 125 C
Storage Temperature Range -65 C to 150 C
Maximum Junction Temperature 150 C
Lead Temperature 300 C(Soldering, 60 seconds)
Thermal Resistance
ThetaJA 292 C/W Metal Can Pkg (Still Air @ 0.5W) 147 C/W (500LF/Min Air flow @ 0.5W)
ThetaJC 58 C/W Metal Can Pkg
ESD Tolerance
(Note 3) TBD
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicated conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is Pdmax = (Tjmax - TA)/ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
Note 3: Human body model, 1.5K Ohms in series with 100pF.
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MNLM103-3.3-H REV 0A0 MILITARY DATA SHEET
Electrical Characteristics
DC PARAMETERS:
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Tolerance = +10%.
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Vz Zener Voltage Ir = 400uA 2, 3 2.97 3.63 V 1
3 0.8 7 V 2
3 18V3
Ir = 1mA 2, 3 2.97 3.63 V 1
3 0.8 7 V 2
3 18V3
Ir = 2mA 2, 3 2.97 3.63 V 1
3 0.8 7 V 2
3 18V3
Ir = 3mA 2, 3 2.97 3.63 V 1
3 0.8 7 V 2
3 18V3
Delta Vz/
Delta Ir Zener Voltage
Change 10uA < Ir < 100uA 120 mV 1
10uA < Ir < 100uA 200 mV 2, 3
100uA < Ir < 1mA 50 mV 1
100uA < Ir < 1mA 70 mV 2
100uA < Ir < 1mA 60 mV 3
1mA < Ir < 5mA 150 mV 1
1mA < Ir < 5mA 200 mV 2, 3
Ir Reverse Leakage
Current Vr = Vz -200mV (test uses Vz reading
from Ir = 400uA subgroup 1) 5uA1
50 uA 2, 3
Vf Forward Voltage
Drop If = 5mA -0.7 -1 V 1
-0.5 -1.5 V 2, 3
Rr Reverse Dynamic
Impedance Ir = 3mA +5% 25 Ohms 1
Delta Vz/
Delta t Temperature
Coefficient of
Zener Voltage
100uA < Ir < 1mA, -55 C < TA < 125 C 1 -8 mV/ C 1
Vn Peak-to-Peak
Broadband Noise
Voltage
1Hz < f < 100KHz, Ir = 1mA 1 1000 uV 1
Rr Rev. Dynamic
Impedance Ir = 0.3mA 1 60 Ohms 1
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MNLM103-3.3-H REV 0A0 MILITARY DATA SHEET
Electrical Characteristics
DC PARAMETERS:(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Tolerance = +10%.
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Delta Vz /
Delta Ir Zener Voltage
Change 10uA < Ir < 1mA 1 260 mV 1, 2,
3
DC PARAMETERS: DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Tolerance = +10%. "Deltas not required on B-Level product. Deltas required for S-Level product ONLY as
specified on Internal Processing Instructions (IPI)."
Vz Zener Voltage Ir = 400uA -0.08 0.08 V 1
Ir = 1mA -0.08 0.08 V 1
Ir = 2mA -0.08 0.08 V 1
Ir = 3mA -0.08 0.08 V 1
Note 1: Guaranteed parameter not tested.
Note 2: Tests 1 to 4 are set on the Teradyne based on the nominal Zener Voltage of the
devices being tested. Limits are as shown. Acceptable Deltas would be as shown.
Tolerance is 10%. Nominal Zener Voltage is last two digits of device name.
Note 3: Test 1 to 4 at extreme temperatures can be datalogged (for purposes of computing
temp-coefficient) but have no set limits. The limits listed in the Min and Max
columns are those tested in the programs (for all Zener Voltages).
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