FCA20N60S_F109 - Fairchild

FCA20N60F Rev. A1

FCA20N60F 600V N-CHANNEL FRFET

FCA20N60F

600V N-CHANNEL FRFET

Features

•650V @T

J = 150°C

• Typ. Rds(on)=0.15Ω

• Fast Recovery Type ( trr = 160ns )

• Ultra low gate charge (typ. Qg=75nC)

• Low effective output capacitance (typ. Coss.eff=165pF)

• 100% avalanche tested

Description

SuperFETTM is, Fairchild’s proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and

lower gate charge performance.

This advanced technology has been tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is very suitable for various AC/DC

power conversion in switching mode operation for system

miniaturization and higher efficiency.

Absolute Maximum Ratings

Thermal Characteristics

GSDTO-3PN

FCA Series

Symbol Parameter FCA20N60F Unit

VDSS Drain-Source Voltage 600 V

IDDrain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C) 20

12.5 A

IDM Drain Current - Pulsed (Note 1) 60 A

VGSS Gate-Source voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 690 mJ

IAR Avalanche Current (Note 1) 20 A

EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns

PDPower Dissipation (TC = 25°C)

- Derate above 25°C208

1.67 W

W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds 300 °C

Symbol Parameter FCA20N60F Unit

RθJC Thermal Resistance, Junction-to-Case 0.6 °C/W

RθJA Thermal Resistance, Junction-to-Ambient 40 °C/W

* When mounted on the minimum pad size recommended (PCB Mount)

•RoHS Compliant

December 2008

SuperFET

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FCA20N60F Rev. A1

FCA20N60F 600V N-CHANNEL FRFET

Package Marking and Ordering Information

Electrical Characteristics TC = 25°C unless otherwise noted

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 20A, di/dt ≤ 1200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Device Marking Device Package Reel Size Tape Width Quantity

FCA20N60F FCA20N60F TO-3PN -- -- 30

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C600 -- -- V

VGS = 0V, ID = 250μA, TJ = 150°C-- 650 -- V

ΔBVDSS

/ ΔTJ

Breakdown Voltage Temperature

Coefficient ID = 250μA, Referenced to 25°C-- 0.6 -- V/°C

BVDSS Drain-Source Avalanche Breakdown

Voltage VGS = 0V, ID = 20A -- 700 -- V

IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V

VDS = 480V, TC = 125°C--

-- --

-- 10

100 μA

μA

IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA3.0 -- 5.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = 10V, ID = 10A -- 0.15 0.19 Ω

gFS Forward Transconductance VDS = 40V, ID = 10A (Note 4) -- 17 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25V, VGS = 0V,

f = 1.0MHz -- 2370 3080 pF

Coss Output Capacitance -- 1280 1665 pF

Crss Reverse Transfer Capacitance -- 95 -- pF

Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 65 85 pF

Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 165 -- pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 300V, ID = 20A

RG = 25Ω

(Note 4, 5)

-- 62 135 ns

trTurn-On Rise Time -- 140 290 ns

td(off) Turn-Off Delay Time -- 230 470 ns

tfTurn-Off Fall Time -- 65 140 ns

QgTotal Gate Charge VDS = 480V, ID = 20A

VGS = 10V

(Note 4, 5)

-- 75 98 nC

Qgs Gate-Source Charge -- 13.5 18 nC

Qgd Gate-Drain Charge -- 36 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 20 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A

VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0V, IS = 20A

dIF/dt =100A/μs (Note 4) -- 160 -- ns

Qrr Reverse Recovery Charge -- 1.1 -- μC

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FCA20N60F Rev. A1

FCA20N60F 600V N-CHANNEL FRFET

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10-1 100101

100

101

102

V GS

Top : 15.0 V

10 .0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

* Notes :

1. 250μs P ulse Test

2. TC = 25oC

ID, Drain Current [A]

VDS, Drain-Source Voltage [V] 246810

100

101

102

* Note:

1. VDS = 40V

2. 250μs Pulse Test

-55oC

150oC

25oC

ID , Drain Current [A]

VGS , Gate-Source Voltage [V]

0 5 10 15 20 25 30 35 40 45 50 55 60 65 70

0.0

0.1

0.2

0.3

0.4

VGS = 20V

VGS = 10V

* Note : TJ = 25oC

RDS(ON) [Ω],

Drain-Source On-Resistance

ID, Drain Current [A] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

100

101

102

25oC

150oC

* Notes :

1. VGS = 0V

2. 25 0 μs Pulse Test

IDR , Reverse Drain Current [A]

VSD , Source-Drain Voltage [V]

10-1 100101

1000

2000

3000

4000

5000

6000

7000

8000

9000

10000 Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

* Notes :

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0 1020304050607080

VDS = 250V

VDS = 100V

VDS = 400V

* Note : ID = 20A

VGS, Gate-Source Voltage [V]

QG, Total Gate Charge [n C]

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FCA20N60F Rev. A1

FCA20N60F 600V N-CHANNEL FRFET

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

Figure 9-1. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 11. Transient Thermal Response Curve

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

* Note s :

1. VGS = 0 V

2. ID = 250 μA

BVDSS, (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC] -100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

* Notes :

1. VGS = 10 V

2. ID = 20 A

RDS(ON), (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

100101102103

10-2

10-1

100

101

102Operation in This Area

is Limited by R DS(on)

DC 10 ms

1 ms

100 μs

* Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. S in g le Pulse

ID, Drain Current [A]

VDS, Drain-Source Vo ltage [V]

25 50 75 100 125 150

ID, Drain Current [A ]

TC, Case Temperature [ oC]

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

* N otes :

1 . Z θJC(t) = 0 .6oC/W Max.

2 . Duty F a c to r , D=t1/t2

3 . T JM - T C = PDM * Z θJC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC(t), Thermal Response

t1, S q u a re Wa v e P u ls e Du ra tio n [s e c]

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FCA20N60F Rev. A1

FCA20N60F 600V N-CHANNEL FRFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

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FCA20N60F Rev. A1

FCA20N60F 600V N-CHANNEL FRFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

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FCA20N60F Rev. A1

FCA20N60F 600V N-CHANNEL FRFET

Mechanical Dimensions TO-3PN

Dimensions in Millimeters

Rev. I37

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make changes at any time without notice to improve the design.

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FCA20N60F Rev. A1

FCA20N60F 600V N-CHANNEL FRFET