SuperFET TM FCA20N60F 600V N-CHANNEL FRFET Features Description * 650V @TJ = 150C SuperFETTM is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. * Typ. Rds(on)=0.15 * Fast Recovery Type ( trr = 160ns ) * Ultra low gate charge (typ. Qg=75nC) * Low effective output capacitance (typ. Coss.eff=165pF) * 100% avalanche tested * RoHS Compliant D G TO-3PN FCA Series G DS S Absolute Maximum Ratings Symbol Parameter FCA20N60F Unit 600 V 20 12.5 A A 60 A VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25C) - Continuous (TC = 100C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 20 A EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds (Note 1) (TC = 25C) - Derate above 25C 30 V 690 mJ 50 V/ns 208 1.67 W W/C -55 to +150 C 300 C Thermal Characteristics Symbol Parameter FCA20N60F Unit RJC Thermal Resistance, Junction-to-Case 0.6 C/W RJA Thermal Resistance, Junction-to-Ambient 40 C/W * When mounted on the minimum pad size recommended (PCB Mount) (c)2008 Fairchild Semiconductor Corporation FCA20N60F Rev. A1 1 www.fairchildsemi.com FCA20N60F 600V N-CHANNEL FRFET December 2008 Device Marking Device Package Reel Size Tape Width Quantity FCA20N60F FCA20N60F TO-3PN -- -- 30 Electrical Characteristics Symbol TC = 25C unless otherwise noted Parameter Conditions Min Typ Max Units VGS = 0V, ID = 250A, TJ = 25C 600 -- -- V VGS = 0V, ID = 250A, TJ = 150C -- 650 -- V ID = 250A, Referenced to 25C -- 0.6 -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage BVDSS / TJ Breakdown Voltage Temperature Coefficient BVDSS Drain-Source Avalanche Breakdown Voltage VGS = 0V, ID = 20A -- 700 -- V IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V VDS = 480V, TC = 125C --- --- 10 100 A A IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.15 0.19 -- 17 -- S -- 2370 3080 pF -- 1280 1665 pF -- 95 -- pF On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 10A gFS Forward Transconductance VDS = 40V, ID = 10A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 65 85 pF Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 165 -- pF VDD = 300V, ID = 20A RG = 25 -- 62 135 ns -- 140 290 ns -- 230 470 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 4, 5) VDS = 480V, ID = 20A VGS = 10V (Note 4, 5) -- 65 140 ns -- 75 98 nC -- 13.5 18 nC -- 36 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 20 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A -- -- 1.4 V trr Reverse Recovery Time -- 160 -- ns Qrr Reverse Recovery Charge VGS = 0V, IS = 20A dIF/dt =100A/s -- 1.1 -- C (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 10A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 20A, di/dt 1200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FCA20N60F Rev. A1 2 www.fairchildsemi.com FCA20N60F 600V N-CHANNEL FRFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 2 10 VGS 2 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 1 10 10 ID , Drain Current [A] ID, Drain Current [A] Top : 0 10 * Notes : 1. 250s Pulse Test o 1 150 C 10 o 25 C o -55 C 0 10 * Note: 1. VDS = 40V o 2. TC = 25 C -1 0 10 2. 250s Pulse Test 1 10 10 2 4 VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 10 2 10 IDR , Reverse Drain Current [A] RDS(ON) [], 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.4 Drain-Source On-Resistance 6 VGS , Gate-Source Voltage [V] 0.3 VGS = 10V 0.2 VGS = 20V 0.1 1 10 o 150 C 0 10 o 25 C * Notes : 1. VGS = 0V 2. 250s Pulse Test o * Note : TJ = 25 C 0.0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0.2 0.4 0.6 0.8 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Crss = Cgd Capacitance [pF] 7000 Coss 5000 * Notes : 1. VGS = 0 V 4000 2. f = 1 MHz Ciss 3000 2000 Crss 10 VDS = 250V VDS = 400V 8 6 4 2 * Note : ID = 20A 0 10 0 1 0 10 10 20 30 40 50 60 70 80 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] FCA20N60F Rev. A1 1.6 VDS = 100V Coss = Cds + Cgd 8000 0 -1 10 1.4 12 Ciss = Cgs + Cgd (Cds = shorted) 9000 1000 1.2 Figure 6. Gate Charge Characteristics 10000 6000 1.0 VSD , Source-Drain Voltage [V] ID, Drain Current [A] 3 www.fairchildsemi.com FCA20N60F 600V N-CHANNEL FRFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250 A Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 20 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9-1. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 25 Operation in This Area is Limited by R DS(on) 2 10 10 ID, Drain Current [A] ID, Drain Current [A] 20 100 s 1 1 ms 10 ms DC 0 10 * Notes : o 1. TC = 25 C -1 10 15 10 5 o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 2 10 0 25 3 10 10 50 75 100 125 150 o VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve 10 0 ZJC(t), Thermal Response D = 0 .5 0 .2 10 * N o te s : o -1 1 . Z JC (t) = 0 .6 C /W M a x. 0 .1 2 . D u ty F a c to r, D = t 1 /t 2 0 .0 5 3 . T J M - T C = P D M * Z JC (t) 0 .0 2 PDM t1 10 -2 10 0 .0 1 -5 t2 s in g le p u ls e 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FCA20N60F Rev. A1 4 www.fairchildsemi.com FCA20N60F 600V N-CHANNEL FRFET Typical Performance Characteristics (Continued) FCA20N60F 600V N-CHANNEL FRFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCA20N60F Rev. A1 5 www.fairchildsemi.com FCA20N60F 600V N-CHANNEL FRFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FCA20N60F Rev. A1 6 www.fairchildsemi.com FCA20N60F 600V N-CHANNEL FRFET Mechanical Dimensions TO-3PN Dimensions in Millimeters FCA20N60F Rev. A1 7 www.fairchildsemi.com FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) tm Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM F-PFSTM Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW /W /kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) (R) tm PDP SPMTM Power-SPMTM PowerTrench(R) PowerXSTM tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM XSTM The Power Franchise(R) * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 FCA20N60F Rev. A1 8 www.fairchildsemi.com FCA20N60F 600V N-CHANNEL FRFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.