P
R
ELIMINA
R
Y
ES3K thru ES3M
SMC
All Dim ensions in m illimeter
SMC
DIM. MIN. MAX.
A
C
D
E
F
G
H
B 6.60 7.11
6.22 5.59
2.92 3.18
0.31 0.15
7.75 8.13
0.05 0.20
2.01 2.62
0.76 1.52
C
HEF
G
D
B
A
FEATURES
Glass passivated chip
Super fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification 94V-0
MECHANICAL DAT A
Case : Molded plastic
Polarity : Color band denotes cathode
Weight : 0.007 ounces, 0.21 grams
NO TE S : 1. Reverse Recove ry Test Co nditions :I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A.
2. Measured at 1.0MHz and applied rev erse voltage of 4.0V DC.
3. The rmal Resistance j u nc tion to Lead.
SURFAC E MOUNT
SUPER FA ST RECT IFIERS
REVERSE VOL TAGE -
600
to
1000
Volts
FOR WARD CURRENT -
3.0
Amperes
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SEMICONDUCTOR
LITE-ON
REV. 1, 25-Mar-2002, KSGC02
Maximum Average Forward
Rectified Current
Peak Forward Surg e Current
8.3ms single half sine-wave
super imposed on rated load (JED EC METHOD)
Maximum Recurr ent Peak Rever se Vol tage
Maximum RMS Vo ltag e
Maximum DC Blocking Voltage
Maximum forward Voltage at 3.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
3.0
100
1.5
Operating Tem perature Range
Storage Temperature Range
Typ ica l Therma l Resista nce ( Note 3)
Typi c al Junction Ca pacit ance (No t e 2)
UNIT
CHARACTERISTICS SYMBOL
@TL =110 C
Maximum Reverse Recovery Time (Note 1)
@TJ =25 C
@TJ=125 C
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
RR
C
J
T
J
R
θ
JL
T
STG
800
560
V
V
V
1.7
A
A
V
uA
ns
pF
C/W
C
10
500
50
45
15
-55 to + 150
ES3K
800
1000
700
ES3M
1000
C
-55 to + 150