1997 Microchip Technology Inc.
Preliminary
DS21219B-page 1
M
MCRF200
FEATURES
Contactless programmable after encapsulation
Read only data transmission
96 or 128 bits of OTP user memory
Operates at 125 kHz
On chip rectifier and voltage regulator
Ultra low power operation
Factory programming and device serialization
available
Encoding options:
- NRZ Direct, Differential Bi-Phase,
Manchester Bi-Phase, Bi-Phase IDI
Modulation options:
- FSK, Direct, PSK (change on data change),
PSK (change at the beginning of a one)
DESCRIPTION
This device is a standard Radio Frequency Identifica-
tion (RFID) tag that provides a bidirectional interf ace for
programming and reading the contents of the user
array. The device is powered by an exter nal RF trans-
mitter through inductive coupling. When in the read
mode, the device will transmit the contents of its array
by damping (modulating) the incoming RF signal. The
reader is able to detect the damping and decodes the
data being transmitted. Code length, modulation
option, encoding option, and bit rate are set at the
factory to fit the needs of particular applications.
APPLICATION
The user memory array of this device can be pro-
grammed contactlessly after encapsulation. This
allows the user to keep encapsulated blank tags in
stock for on-demand personalization. The tags can
then be programmed with data as they are needed.
These devices are available in die form. The encoding,
modulation, frequency, and bit rate options are speci-
fied by the customer and programmed by Microchip
prior to shipment. Array programming and serialization
can also be arranged upon request.
BLOCK DIAGRAM
MCRF200
Transmitter/
Receiver
RF
Signal
Data
Column
Memory
Array
Vcc
Vss
Rectifier
Clock
Generator
coil
connections
Decode
Row
Decode
Modulation
Control
Counter
Data
Load
Contactless Programmable Passive RFID Device
MCRF200
DS21219B-page 2
Preliminary
1997 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
1.1 Maximum Ratings*
Storage temperature.....................................-65˚C to +150˚C
Ambient temp. with power applied.................-40˚C to +125˚C
Maximum current into coil pads ...................................50 mA
*Notice:
Stresses above those listed under “Maximum ratings” may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at those or any other conditions
above those indicated in the operational listings of this specification is
not implied. Exposure to maximum rating conditions for e xtended peri-
ods may affect device reliability.
TABLE 1-1: PAD FUNCTION TABLE
Name Function
VA,VB Coil connection
NC No connection, test pad
TABLE 1-2: AC AND DC CHARACTERISTICS
All parameters apply across the speci-
fied operating ranges unless otherwise
noted.
Industrial (I): Tamb = -40˚C to +85˚C
Parameter Symbol Min. Typ. Max. Units Conditions
Clock frequency F
CLK
100 150 kHz
Contactless programming time T
WC
2 s 128-bit array
Data retention 200 Years 25
°
C
Coil current (Dynamic) I
CD
—50
µ
A
Operating current I
DD
—5
µ
AV
CC
= 2V
Turn-on-voltage (Dynamic)
for modulation V
A
V
B
10 V
PP
V
CC
2—V
DC
MCRF200
1997 Microchip Technology Inc.
Preliminary
DS21219B-page 3
FIGURE 1-1: DIE PLOT
VBVA
NC NC NC NC
TABLE 1-3: RFID PAD COORDINATES (MICRONS)
Passivation Openings
Pad
Name Pad
Width Pad
Height Pad
Center X Pad
Center Y
VA 90.0 90.0 427.50 -734.17
VB 90.0 90.0 -408.60 -734.17
Note 1:
All coordinates are referenced from the center of the die.
2:
Die size 1.1215 mm x 1.7384 mm.
MCRF200
DS21219B-page 4
Preliminary
1997 Microchip Technology Inc.
2.0 FUNCTIONAL DESCRIPTION
The RF section generates all the analog functions
needed by the transponder. These include rectification
of the carrier, on-chip regulation of V
PP
(programming
voltage), and V
DD
(operating voltage), as well as high
voltage clamping to prevent excessive voltage from
being applied to the transponder. This section gener-
ates a system clock from the interrogator carrier of the
same frequency, detects carrier interrupts and modu-
lates the tuned LC antenna for transmission to the
interrogator . The chip detects a po wer-up condition and
resets the transponder when sufficient voltage devel-
ops.
2.1 Rectifier – AC Clamp
The AC voltage generated b y the transponder tuned LC
circuit is full wave rectified. This unregulated voltage is
used as the maximum DC supply v oltage f or the rest of
the chip. The peak voltage on the tuned circuit is
clamped by the internal circuitr y to a safe level to pre-
vent damage to the IC. This voltage is adjusted during
programming to allow sufficient programming voltage
to the EEPROM.
2.2 Coil Load Modulation
The MCRF200 communicates by modulating the load
across the tuned LC circuit, which modulates the
received RF field.
2.3 V
DD
Regulator
The device generates a fixed supply voltage from the
unregulated coil voltage.
2.4 V
PP
Regulator
This regulates a programming voltage during the pro-
gramming mode. The voltage is switched into the
EEPROM array to perform block erasure of the mem-
or y as well as single bit programming during both con-
tact and contactless programming. During reading this
voltage is level shifted down and kept below the pro-
gramming voltages to insure that the part is not inad-
vertently programmed.
2.5 Clock Generator
This circuit generates a cloc k with a frequency equal to
the interrogator frequency. This clock is used to derive
all timing in the tag, including the baud rate, modulation
rate, and programming rate.
2.6 IRQ Detector
This circuitry detects an interrupt in the continuous
electromagnetic field of the interrogator. An IRQ (inter-
rupt request) is defined as the absence of the electro-
magnetic field for a specific number of clock cycles.
This feature is used during contactless programming.
2.7 Power On Reset
This circuit generates a power on reset when the tag
first enters the interrogator field. The reset releases
when sufficient power has developed on the V
DD
regu-
lator to allow correct operation. The reset trip points are
set such that sufficient voltage across V
DD
has devel-
oped, which allows for correct clocking of the logic for
reading of the EEPROM and configuration data, and
correct modulation.
2.8 Modulation Logic
This logic acts upon the serial data being read from the
EEPROM and performs two operations on the data.
The logic first encodes the data according to the con-
figuration bits CB6 and CB7. The data can be sent out
direct to the modulation logic or encoded Bi-Phase Dif-
ferential, Bi-Phase Manchester or Manchester with IDI
option.
The encoded data is then either passed NRZ Direct out
to modulate the coil, or FSK modulated, or PSK modu-
lated with changes on the change of data, or PSK with
changes on the bit edge of a one. Configuration bits
CB8 and CB9 determine the modulation option. CB10
is used if the PSK option has been selected, and deter-
mines if the return carrier rate is F
CLK
/2 or F
CLK
/4.
MCRF200
1997 Microchip Technology Inc.
Preliminary
DS21219B-page 5
3.0 CONFIGURATION LOGIC
3.1 Control Bit Register
The configuration register determines the operational
parameters of the device. The configuration register
can not be programmed contactlessly; it is pro-
grammed during wafer probe at the Microchip factory.
CB11 is always a zero; CB12 is set when successful
contact or contactless programming of the data array
has been completed. Once CB12 is set, programming
and erasing of the device is disabled. Figure 3-1
contains a description of the control register bit func-
tions.
3.2 Organization
The configuration bit register directly controls logic
blocks which generate the baud rate, memory size,
encoded data and modulated data. This register also
contains bits which lock the data array.
3.3 Baud Rate Timing
The chip will access data at a baud rate determined by
bits CB2, CB3, CB4, and CB5 of the configuration reg-
ister. CB2, CB3, and CB4 determine the return data
rate (CACLK). The default rate of F
CLK
/128 is used for
contact and contactless programming. Once the array
is successfully programmed, the lock bit CB12 is set.
When the lock bit is cleared, prog ramming and er asing
the de vice becomes permanently disabled. The config-
uration register has no eff ect on device timing until after
the EEPROM data array is programmed. If CB2 is set
to a one and CB5 is set to a one, the 1.5 bit SYNC word
option is enabled.
3.4 Column and Row Decoder Logic and
Bit Counter
The column and row decoders address the EEPROM
array at the CACLK rate and generate a serial data
stream for modulation. This data stream can be up to
128 bits in length. The size of the stream is user pro-
grammable with CB1, and can be set to 96 or 128 bits.
Data lengths of 48 and 64 bits are available by pro-
gramming the data twice in the array end to end. The
data is then encoded by the modulation logic. The data
length during contactless programming is 128 bits.
The column and row decoders route the proper v oltage
to the array for programming and reading. In the pro-
gramming modes , each individual bit is addressed seri-
ally from bit 1 to bit 128.
FIGURE 3-1: CONFIGURATION REGISTER
CB12CB11 CB10 CB9 CB8 CB7 CB6 CB5 CB4 CB3 CB2 CB1 ARRAY SIZE
CB1 = 1 128-bit user array
CB1 = 0 96-bit user array
TIMING
SYNC WORD
CB5 = 1 1.5-bit sync word enable
CB5 = 0 1.5-bit sync word disable
DATA ENCODING
CB6 = 0; CB7 = 0 nrz_I (direct)
CB6 = 0; CB7 = 1 biphase_s (differential)
CB6 = 1; CB7 = 0 biphase_I (manchester)
CB6 = 1; CB7 = 1 idi (manchester)
MODULATION OPTIONS
CB8 = 0; CB9 = 0 FSK 0 = /8, 1 = /10
CB8 = 0; CB9 = 1 Direct
CB8 = 1; CB9 = 0 psk_1
(phase change on change of data)
CB8 = 1; CB9 = 1 psk_2
(phase change at beginning of a one)
PSK RATE OPTION
CB10 = 1 clk/4 carrier
CB10 = 0 clk/2 carrier
(READ ONLY)
CB11 = 0
ARRAY LOCK BIT (READ ONLY)
CB12 = 0 array not locked
CB12 = 1 array is locked
CB2 CB3 CB4 Rate
0 0 0 MOD128
0 0 1 MOD100
0 1 0 MOD80
0 1 1 MOD32
1 0 0 MOD64
1 0 1 MOD50
1 1 0 MOD40
1 1 1 MOD16
MCRF200
DS21219B-page 6
Preliminary
1997 Microchip Technology Inc.
4.0 MODES OF OPERATION
The device has two basic modes of operation, which
are discussed below.
4.1 Native Mode
In native mode, a transponder will have an unpro-
grammed arr ay and will be in the default mode f or con-
tactless programming (default baud rate F
CLK
/128,
FSK, NRZ_direct).
4.2 Read Mode
The second mode is a read mode after the contactless
or contact programming has been completed and for
the rest of the lifetime of the device. The lock bit CB12
will be set, and when the transponder is pow ered it will
have the ability to transmit according to the protocol in
the configuration register.
FIGURE 4-1: TYPICAL APPLICATION CIRCUIT
P ad VB
P ad VA
Input capacitance 5 pF
Energy
Data
2.2 nF
To read
amplifier
From
oscillator IAC 740 µH4.05 mH 390 pF
fres 1
2πLC
------------------- 125
kHz
==
125 kHz
MCRF200
1997 Microchip Technology Inc.
Preliminary
DS21219B-page 7
MCRF200 PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Sales and Support
Configuration:
Hex Code = Three digit hex value to be programmed into the
configuration register. Three hex characters corre-
spond to 12 binary bits. These bits are programmed
into the configuration register MSB first (CB12,
CB11…CB1). See the example below.
Package: WF = Sawed wafer on frame (7 mil backgrind)
W = Wafer
S = Dice in waffle pack
Temperature I= -40°C to +85°C
Range:
Sample Part MCRF200-I /W00A
Number:
MCRF200-I/W00A = 125 kHz, industrial temperature, wafer package,
contactlessly programmable, 96 bit,
FSK /8 /10, direct encoded, F/50 data return rate
tag. The configuration register is:
CB12 CB11 CB10 CB9 CB8 CB7 CB6 CB5 CB4 CB3 CB2 CB1
MCRF 200 – I /WFxxx
000000 000 110
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office (see last page).
2. The Microchip Corporate Literature Center U.S. FAX: (602) 786-7277.
3. The Microchip’s Bulletin Board, via your local CompuServe number (CompuServe membership NOT required).
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
MCRF200
DS21219B-page 8
Preliminary
1997 Microchip Technology Inc.