1999-10-28
Page 1
BSP318S
Final data
SIPMOS Small-Signal-Transistor
Features
• N-Channel
• Enhancement mode
• Avalanche rated
• Logic Level
• d
v
/d
t
rated
Product Summary
Drain source voltage V
V
DS 60
Drain-Source on-state resistance
R
DS(on) 0.09 Ω
Continuous drain current A
I
D2.6
VPS05163
123
4
Type Package Ordering Code
BSP318S SOT-223 Q67000-S4002
Pin 1 Pin 2, 4 PIN 3
G D S
Maximum Ratings,at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current 2.6 A
I
D
Pulsed drain current
T
A = 25 °C
I
D puls 10.4
Avalanche energy, single pulse
I
D = 2.6 A,
V
DD = 25 V,
R
GS = 25 Ω60 mJ
E
AS
Avalanche current,periodic limited by
T
jmax A
I
AR 2.6
Avalanche energy, periodic limited by
T
jmax 0.18 mJ
E
AR
Reverse diode d
v
/d
t
I
S = 2.6 A,
V
DS = 20 V, d
i
/d
t
= 200 A/µs,
T
jmax = 150 °C
kV/µsd
v
/d
t
6
Gate source voltage ±20 V
V
GS
Power dissipation
T
A = 25 °C W
P
tot 1.8
Operating and storage temperature
T
j ,
T
stg -55... +150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
1999-10-28
Page 2
BSP318S
Final data
Thermal Characteristics
Parameter Symbol UnitValues
typ. max.min.
Characteristics
Thermal resistance, junction - soldering point
(Pin 4) K/W-
R
thJS - 17
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
R
thJA
-
-
100
-
-
70
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter ValuesSymbol Unit
max.typ.min.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = 0.25 mA
V
(BR)DSS 60 - V-
Gate threshold voltage,
V
GS =
V
DS
I
D = 20 µA 1.2 1.6
V
GS(th) 2
Zero gate voltage drain current
V
DS = 60 V,
V
GS = 0 V,
T
j = 25 °C
V
DS = 60 V,
V
GS = 0 V,
T
j = 150 °C
1
100
0.1
-
µA
I
DSS
-
-
Gate-source leakage current
V
GS = 20 V,
V
DS = 0 V
I
GSS 10 nA100-
R
DS(on) - 0.12Drain-Source on-state resistance
V
GS = 4.5 V,
I
D = 2.6 A 0.15 Ω
Drain-Source on-state resistance
V
GS = 10 V,
I
D = 2.6 A
R
DS(on) - 0.07 0.09
1Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
1999-10-28
Page 3
BSP318S
Final data
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS≥2*
I
D*
R
DS(on)max ,
I
D = 2.6 A
g
fs 2.4 S-5.5
Input capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz - 380 pF300
C
iss
Output capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz - 90 120
C
oss
6550-
C
rss
Reverse transfer capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
Turn-on delay time
V
DD = 30 V,
V
GS = 4.5 V,
I
D = 2.6 A,
R
G = 16 Ω
t
d(on) 12 ns20-
Rise time
V
DD = 30 V,
V
GS = 4.5 V,
I
D = 2.6 A,
R
G = 16 Ω
t
r- 15 25
20 30
t
d(off)
Turn-off delay time
V
DD = 30 V,
V
GS = 4.5 V,
I
D = 2.6 A,
R
G = 16 Ω
-
Fall time
V
DD = 30 V,
V
GS = 4.5 V,
I
D = 2.6 A,
R
G = 16 Ω
t
f- 15 25
1999-10-28
Page 4
BSP318S
Final data
Electrical Characteristics, at
T
j = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Gate charge at threshold
V
DD = 40 V,
I
D = 0.1 A, V = 1 V -
Q
G(th) nC0.60.4
Gate charge at
V
GS = 5 V
V
DD = 40 V,
I
D = 2.6 A,
V
GS = 0 to 5 V
Q
g(5) 7 10-
20-
Q
g
Gate charge total
V
DD = 40 V,
I
D = 2.6 A,
V
GS = 0 to 10 V 14
Gate plateau voltage
V
DD = 40 V ,
I
D = 2.6 A
V
(plateau) - 3.6 - V
Parameter ValuesSymbol Unit
max.typ.min.
Reverse Diode
A-- 2.6
I
S
Inverse diode continuous forward current
T
A = 25 °C
Inverse diode direct current,pulsed
T
A = 25 °C -
I
SM - 10.4
Inverse diode forward voltage
V
GS = 0 V,
I
F = 5.2 A V1.2
V
SD 0.95-
Reverse recovery time
V
R = 30 V,
I
F=
I
S , d
i
F/d
t
= 100 A/µs - 75 ns50
t
rr
- 0.1 0.15
Q
rr
Reverse recovery charge
V
R = 30 V,
I
F=
l
S , d
i
F/d
t
= 100 A/µs µC
1999-10-28
Page 5
BSP318S
Final data
Power Dissipation
P
tot =
f
(TA)
0 20 40 60 80 100 120 °C 160
TA
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
W
1.9
BSP318S
P
tot
Drain current
I
D =
f
(
T
A)
0 20 40 60 80 100 120 °C 160
TA
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
A
2.8
BSP318S
I
D
Safe operating area
I
D =
f
(
V
DS )
parameter :
D
= 0 ,
T
A = 25 °C
10 -1 10 0 10 1 10 2
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A
BSP318S
I
D
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
t
p = 140.0µs
Transient thermal impedance
Z
thJA =
f
(tp)
parameter :
D =
t
p/
T
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4
s
t
p
-2
10
-1
10
0
10
1
10
2
10
K/W
BSP318S
Z
thJA
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
1999-10-28
Page 6
BSP318S
Final data
Typ. output characteristic
I
D = f (
V
DS);
T
j=25°C
parameter:
t
p = 80 µs
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V5.0
V
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
A
6.5
BSP318S
I
D
V
GS [V]
a
a 2.0
b
b 2.5
cc 3.0
d
d 3.5
e
e 4.0
f
f 4.5
g
g 5.0
h
h 5.5
i
i 6.0
j
j 7.0
k
k 8.0
l
P
tot = 1.80W
l 10.0
Typ. transfer characteristics
I
D=
f
(
V
GS )
V
DS≥ 2 x
I
D x
R
DS(on)max
parameter:
t
p = 80 µs
0 1 2 3 4 5 6 7 8 V10
V
GS
0
1
2
3
4
5
6
7
8
9
10
11
12
A
15
I
D
Drain-source on-resistance
R
DS(on) =
f
(
T
j)
parameter :
I
D = 2.6 A,
V
GS = 4.5 V
-60 -20 20 60 100 °C 180
T
j
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
Ω
0.36
BSP318S
R
DS(on)
typ
98%
Gate threshold voltage
V
GS(th) =
f
(
T
j)
parameter:
V
GS =
V
DS,
I
D = 20 µA
-60 -20 20 60 100 140 °C 200
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
V
3.0
V
GS(th)
min
typ
max
1999-10-28
Page 7
BSP318S
Final data
Typ. capacitances
C = f(VDS)
parameter:
V
GS=0 V,
f
=1 MHz
0 5 10 15 20 25 30 V40
V
DS
1
10
2
10
3
10
pF
C
C
iss
C
oss
C
rss
Forward characteristics of reverse diode
I
F =
f
(VSD)
parameter:
T
j , tp = 80 µs
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0
V
SD
-1
10
0
10
1
10
2
10
A
BSP318S
I
F
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)
Avalanche Energy
E
AS =
f
(
T
j)
parameter:
I
D = 2.6 A,
V
DD = 25 V
R
GS = 25 Ω
20 40 60 80 100 120 °C 160
T
j
0
5
10
15
20
25
30
35
40
45
50
55
mJ
65
E
AS
Typ. gate charge
V
GS =
f
(
Q
Gate)
parameter:
I
D = 2.6 A pulsed
0 4 8 12 16 nC 24
Q
Gate
0
2
4
6
8
10
12
V
16
BSP318S
V
GS
DS max
V
0,8
DS max
V
0,2
1999-10-28
Page 8
BSP318S
Final data
Drain-source breakdown voltage
V
(BR)DSS = f
(
T
j)
-60 -20 20 60 100 °C 180
T
j
54
56
58
60
62
64
66
68
V
72
BSP318S
V
(BR)DSS
1999-10-28
Page 9
BSP318S
Final data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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