BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits * * * * * * * * ID V(BR)DSS RDS(on) max -50V 10 @ VGS = -5V TA = 25C -130mA Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. * * * * * * * General Purpose Interfacing Switch Power Management Functions Analog Switch Case: SOT23 Case Material: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish (Lead Free Plating) Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) * * Drain SOT23 D Gate Source Top View S G Equivalent Circuit Top View Ordering Information (Note 3) Part Number BSS84-7-F BSS84Q-7-F BSS84-13-F BSS84Q-13-F Notes: Qualification Commercial Automotive Commercial Automotive Case SOT23 SOT23 SOT23 SOT23 Packaging 3000/Tape & Reel 3000/Tape & Reel 10000/Tape & Reel 10000/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Product manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants 3. For packaging details, go to our website at http://www.diodes.com. K84 Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 BSS84 Document number: DS30149 Rev. 17 - 2 2000 L C84 2001 M Mar 3 2002 N Apr 4 YM YM Marking Information 2003 P May 5 K = SAT (Shanghai Assembly / Test site) C = CAT (Chengdu Assembly / Test site) 84 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) 2004 R ... ... Jun 6 1 of 5 www.diodes.com 2011 Y Jul 7 2012 Z Aug 8 2013 A Sep 9 2014 B Oct O 2015 C 2016 D Nov N 2017 E Dec D March 2012 (c) Diodes Incorporated BSS84 Maximum Ratings @TA = 25C unless otherwise specified Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 20K Gate-Source Voltage Drain Current (Note 4) Pulsed Drain Current Thermal Characteristics Symbol VDSS VDGR VGSS ID IDM Continuous Continuous Value -50 -50 20 -130 -1.2 Units V V V mA A Value 300 417 -55 to +150 Units mW C/W C @TA = 25C unless otherwise specified Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Electrical Characteristics @TA = 25C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit BVDSS -50 -15 -60 -100 A A nA 10 nA VGS = 0V, ID = -250A VDS = -50V, VGS = 0V, TJ = 25C VDS = -50V, VGS = 0V, TJ = 125C VDS = -25V, VGS = 0V, TJ = 25C VGS = 20V, VDS = 0V V Test Condition Zero Gate Voltage Drain Current IDSS Gate-Body Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Turn-Off Delay Time IGSS VGS(th) RDS (ON) gFS -0.8 0.05 -2.0 10 V S VDS = VGS, ID = -1mA VGS = -5V, ID = -0.100A VDS = -25V, ID = -0.1A Ciss Coss Crss 45 25 12 pF pF pF VDS = -25V, VGS = 0V, f = 1.0MHz tD(ON) tD(OFF) 10 18 ns ns VDD = -30V, ID = -0.27A, RGEN = 50, VGS = -10V Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com. 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing BSS84 Document number: DS30149 Rev. 17 - 2 2 of 5 www.diodes.com March 2012 (c) Diodes Incorporated BSS84 -600 400 ID, DRAIN-SOURCE CURRENT (mA) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 -500 -400 -300 -200 -100 0 0 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1 Max Power Dissipation vs. Ambient Temperature 0 25 -1 -2 -3 -4 -5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 Drain-Source Current vs. Drain-Source Voltage 10 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE () -1.0 ID, DRAIN-CURRENT (A) -0.8 -0.6 -0.4 -0.2 0.0 0 9 8 7 6 5 4 3 2 TA = 125C 1 0 -1 -2 -3 -4 -5 -6 -7 -8 VGS, GATE-SOURCE VOLTAGE (V) Fig. 3 Drain-Current vs. Gate-Source Voltage 15 TA = 25C 0 -2 -3 -4 -5 VGS, GATE-SOURCE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage -1 25.0 VGS = -10V ID = -0.13A RDS(ON), ON-RESISTANCE () RDS(ON), ON-RESISTANCE () 12 9 6 3 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance vs. Junction Temperature BSS84 Document number: DS30149 Rev. 17 - 2 3 of 5 www.diodes.com 20.0 15.0 10.0 5.0 0.0 0.0 -0.2 -0.4 -0.6 -0.8 ID, DRAIN-CURRENT (A) Fig. 6 On-Resistance vs. Drain-Current -1.0 March 2012 (c) Diodes Incorporated BSS84 Package Outline Dimensions A SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm B C H K M K1 D J F L G Suggested Pad Layout Y Z C X BSS84 Document number: DS30149 Rev. 17 - 2 Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 E 4 of 5 www.diodes.com March 2012 (c) Diodes Incorporated BSS84 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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