BSS84
Document number: DS30149 Rev. 17 - 2 1 of 5
www.diodes.com March 2012
© Diodes Incorporated
BSS84
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) max ID
TA = 25°C
-50V 10Ω @ VGS = -5V -130mA
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• General Purpose Interfacing Switch
• Power Management Functions
• Analog Switch
Features and Benefits
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT23
• Case Material: UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish (Lead Free Plating) Solderable per
MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
Ordering Information (Note 3)
Part Number Qualification Case Packaging
BSS84-7-F Commercial SOT23 3000/Tape & Reel
BSS84Q-7-F Automotive SOT23 3000/Tape & Reel
BSS84-13-F Commercial SOT23 10000/Tape & Reel
BSS84Q-13-F Automotive SOT23 10000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Product manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date Code
V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 1998 1999 2000 2001 2002 2003 2004 … 2011 2012 2013 2014 2015 2016 2017
Code J K L M N P R … Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View Equivalent Circuit To
p
View
D
GS
K = SAT (Shanghai Assembly / Test site)
C = CAT (Chengdu Assembly / Test site)
84 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
Source
Gate
Drain
C84
YM
K84
YM
BSS84
Document number: DS30149 Rev. 17 - 2 2 of 5
www.diodes.com March 2012
© Diodes Incorporated
BSS84
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS -50 V
Drain-Gate Voltage RGS ≤ 20KΩ V
DGR -50 V
Gate-Source Voltage Continuous VGSS ±20 V
Drain Current (Note 4) Continuous ID -130 mA
Pulsed Drain Current IDM -1.2 A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4) PD 300 mW
Thermal Resistance, Junction to Ambient R
θ
JA 417 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BVDSS -50 ⎯ ⎯ V VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current IDSS ⎯
⎯
⎯
⎯
⎯
⎯
-15
-60
-100
µA
µA
nA
VDS = -50V, VGS = 0V, TJ = 25°C
VDS = -50V, VGS = 0V, TJ = 125°C
VDS = -25V, VGS = 0V, TJ = 25°C
Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS
(
th
)
-0.8 ⎯ -2.0 V VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance RDS
(
ON
)
⎯ ⎯ 10 Ω V
GS = -5V, ID = -0.100A
Forward Transconductance gFS 0.05 ⎯ ⎯ S VDS = -25V, ID = -0.1A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance Ciss ⎯ ⎯ 45 pF
VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss ⎯ ⎯ 25 pF
Reverse Transfer Capacitance Crss ⎯ ⎯ 12 pF
SWITCHING CHARACTERISTICS (Note 6)
Turn-On Delay Time tD
(
ON
)
⎯ 10 ⎯ ns VDD = -30V, ID = -0.27A,
RGEN = 50Ω, VGS = -10V Turn-Off Delay Time tD
(
OFF
)
⎯ 18 ⎯ ns
Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing
BSS84
Document number: DS30149 Rev. 17 - 2 3 of 5
www.diodes.com March 2012
© Diodes Incorporated
BSS84
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERA TURE (°C)
Fi g. 1 Max Pow er Di s sipati o n vs. Ambient Te mper atur e
A
150
200
250
300
350
0
400
0
-600
-500
-400
-300
-200
-100
0-2-1 -5-4-3
I, D
AIN-S
E
EN
(mA)
D
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Drain-Source Current vs. Drain-Source Voltage
DS
0.0
-1.0
-0.8
-0.6
-0.4
-0.2
0-2-3-4-1 -8-7
-6-5
I, D
AI
-
E
(A)
D
V , GATE-SOURCE VOLTAGE (V)
Fi g. 3 Drain- C ur r ent vs. Gat e- Sour c e Volt age
GS
0
1
2
4
5
3
6
8
7
10
9
0-1 -2 -3 -4 -5
V , GATE-SOURCE (V)
Fig . 4 On- R esistance vs. Gate-Source Voltage
GS
T= 25C
A
°
T = 125 C
A
°
R , NORMALIZED DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
Ω
0
3
6
9
12
15
-50 -25 0 25 50 12510075 150
T , JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance vs. Junction Temperature
J
V = -10V
I = -0.13A
GS
D
R , ON-RESISTANCE ( )
DS(ON)
Ω
0.0
5.0
10.0
0.0 -0.2 -0.4 -0.6 -0.8 -1.0
I , DRAIN-CURRENT (A)
Fig . 6 On-R esistanc e vs. Dr ai n- C urre nt
D
15.0
20.0
25.0
R , ON-RESISTANCE ( )
DS(ON)
Ω
BSS84
Document number: DS30149 Rev. 17 - 2 4 of 5
www.diodes.com March 2012
© Diodes Incorporated
BSS84
Package Outline Dimensions
Suggested Pad Layout
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
XE
Y
C
Z
A
M
JL
D
F
BC
H
K
G
K1
BSS84
Document number: DS30149 Rev. 17 - 2 5 of 5
www.diodes.com March 2012
© Diodes Incorporated
BSS84
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