IXTP42N15T - Zilog - Pdf.Support

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 175°C 150 V

VDGR TJ= 25°C to 175°C, RGS = 1MΩ150 V

VGSM Transient ± 30 V

ID25 TC= 25°C42 A

IDM TC= 25°C, pulse width limited by TJM 100 A

IATC= 25°C5 A

EAS TC= 25°C 400 mJ

PDTC= 25°C 200 W

TJ-55 ... +175 °C

TJM 175 °C

Tstg -55 ... +175 °C

TL1.6mm (0.062in.) from case for 10s 300 °C

TSOLD Plastic body for 10 seconds 260 °C

MdMounting torque (TO-220) 1.13 / 10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 250μA 150 V

VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V

IGSS VGS = ± 20V, VDS = 0V ±100 nA

IDSS VDS = VDSS 5 μA

VGS = 0V TJ = 150°C 150 μA

RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 38 45 mΩ

TrenchHVTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTA42N15T

IXTP42N15T

VDSS = 150V

ID25 = 42A

RDS(on) ≤≤

≤≤

≤ 45mΩΩ

ΩΩ

Ω

DS99799A(11/08)

G = Gate D = Drain

S = Source TAB = Drain

Features

zInternational standard packages

z175°C Operating Temperature

z Avalanche rated

Advantages

zEasy to mount

zSpace savings

zHigh power density

Applications

zDC-DC converters

zBattery chargers

zSwitched-mode and resonant-mode

power supplies

zDC choppers

zAC motor drives

zUninterruptible power supplies

zHigh speed power switching

applications

TO-263

GS

(TAB)

TO-220

GDS(TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA42N15T

IXTP42N15T

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

gfs VDS = 10V, ID = 0.5 • ID25, Note 1 20 33 S

Ciss 1880 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 255 pF

Crss 37 pF

td(on) 14 ns

tr 16 ns

td(off) 50 ns

tf 25 ns

Qg(on) 21 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 6.0 nC

Qgd 6.6 nC

RthJC 0.75 °C/W

RthCH TO-220 0.50 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

IS VGS = 0V 42 A

ISM Repetitive, Pulse width limited by TJM 126 A

VSD IF = 21A, VGS = 0V, Note 1 1.1 V

trr 100 ns

Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

2. On through-hole packages, RDS(on) Kelvin test contact

location must be 5mm or less from the package body.

Resistive Switching Times

VGS = 15V, VDS =0.5 • VDSS, ID = 0.5 • ID25

RG = 10Ω (External)

IF = 25A, VGS = 0V, -di/dt = 100A/μs, VR = 50V

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

TO-263 (IXTA) Outline

Pins: 1 - Gate 2 - Drain

3 - Source 4 - Drain

TO-220 (IXTP) Outline

IXTA42N15T

IXTP42N15T

Fi g . 1. Ou tp u t C h ar acteri sti cs

@ 25ºC

0

5

10

15

20

25

30

35

40

45

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

7V

5V

6V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

20

40

60

80

100

120

0 2 4 6 8 10121416182022242628

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

5V

6V

7V

8V

Fig. 3. Output Characteristics

@ 150ºC

0

5

10

15

20

25

30

35

40

45

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

6V

Fig. 4. R

DS(on)

Normalized to I

D

= 21A Val u e

vs. Junction T emperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 42A

I

D

= 21A

Fig. 5. R

DS(on)

Normalized to I

D

= 21A Value

vs. Dr ai n C u rr ent

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

0 102030405060708090100110

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

15V

- - - -

T

J

= 175ºC

T

J

= 25ºC

Fi g . 6. D r ai n C u r r ent vs. C ase Temp er atur e

0

5

10

15

20

25

30

35

40

45

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Amperes

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA42N15T

IXTP42N15T

IXYS REF: T_42N15T(3G)11-21-08-A

Fig. 7. Input Admittance

0

10

20

30

40

50

60

70

3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0

V

GS

- Volts

I

D

- Amperes

T

J

= 150ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

5

10

15

20

25

30

35

40

45

50

0 10203040506070

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

150ºC

Fig. 9. Forward Voltage Drop of

Intr i n si c D io d e

0

20

40

60

80

100

120

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

V

SD

- Volts

I

S

- Amperes

T

J

= 150ºC

T

J

= 25ºC

Fi g . 10. Gate C h ar g e

0

1

2

3

4

5

6

7

8

9

10

0 2 4 6 8 10121416182022

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 75V

I

D

= 25A

I

G

= 10mA

Fig. 11. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fig . 12 . Maxi mum Transi ent Thermal

Impedance

0.01

0.10

1.00

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

IXTA42N15T

IXTP42N15T

IXYS REF: T_42N15T(3G)11-21-08-A

Fi g. 14. R esisti ve Turn -o n

Ri se Time vs . D r a in C u r r e n t

8

10

12

14

16

18

20

20 22 24 26 28 30 32 34 36 38 40 42

I

D

- Amperes

t

r

- Nanoseconds

T

J

= 125ºC

T

J

= 25ºC

R

G

= 10Ω

V

GS

= 15V

V

DS

= 75V

Fi g . 15. R esi stive Tur n -o n

Swit ch i n g Times vs. Gate R es is tan ce

8

12

16

20

24

28

32

36

40

10 14 18 22 26 30 34 38 42 46 50

R

G

- Ohms

t

r

- Nanoseconds

10

12

14

16

18

20

22

24

26

t

d ( o n )

- Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GS

= 15V

V

DS

= 75V

I

D

= 42A, 21A

Fi g. 16. R esisti ve Turn -o f f

Switching T imes vs. Junction Temperature

14

16

18

20

22

24

26

28

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanoseconds

44

46

48

50

52

54

56

58

t

d ( o f f )

- Nanoseconds

I

D

= 21A

I

D

= 42A

t

f

t

d(off)

- - - -

R

G

= 10Ω, V

GS

= 15V

V

DS

= 75V

Fi g . 17. R esi st i ve Tur n -o ff

Switch i n g Times vs. D r ai n C u r r en t

15

17

19

21

23

25

27

29

20 22 24 26 28 30 32 34 36 38 40 42

I

D

- Amperes

t

f

- Nanoseconds

44

46

48

50

52

54

56

58

t

d ( o f f )

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 10Ω, V

GS

= 15V

V

DS

= 75V

T

J

= 125ºC

T

J

= 25ºC

T

J

= 125ºC

T

J

= 25ºC

Fi g. 13. R esisti v e Turn -on

Rise Time vs. Junction Temperature

8

10

12

14

16

18

20

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r

- Nanoseconds

R

G

= 10Ω

V

GS

= 15V

V

DS

= 75V

I

D

= 42A

I

D

= 21A

Fi g. 18. R esisti v e Turn -off

Switchi n g Times vs. Gate R esistan ce

10

20

30

40

50

60

70

80

10 14 18 22 26 30 34 38 42 46 50

R

G

- Ohms

t

f

- Nanoseconds

-20

20

60

100

140

180

220

260

t

d ( o f f )

- Nanoseconds

t

f

t

d(off)

- - - -

T

J

= 125ºC, V

GS

= 15V

V

DS

= 75V

I

D

= 42A

I

D

= 21A