© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 300 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ 300 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 86 A
IDM TC= 25°C, Pulse Width Limited by TJM 190 A
IATC= 25°C 15 A
EAS 2 J
PDTC= 25°C 830 W
dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns
TJ -55 to +150 °C
TJM +150 °C
Tstg -55 to +150 °C
TL1.6mm (0.063in) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6.0 g
TO-268 4.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 300 V
VGS(th) VDS = VGS, ID = 4mA 3.0 5.0 V
IGSS VGS = ±20V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS = 0V 50 μA
TJ = 125°C 1.75 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25 , Note 1 43 mΩ
TrenchTM HiperFETTM
Power MOSFET
IXFH86N30T
IXFT86N30T
DS100208(11/09)
VDSS = 300V
ID25 = 86A
RDS(on) ≤≤
≤≤
≤ 43mΩΩ
ΩΩ
Ω
Advance Technical Information
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXFH)
TO-268 (IXFT)
G
SD (Tab)
S
G
D (Tab)
D
Features
zInternational Standard Packages
z Avalanche Rated
zHigh Current Handling Capability
z Fast Intrinsic Rectifier
zLow RDS(on)
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zDC-DC Converters
zBattery Chargers
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC Choppers
zAC Motor Drives
zUninterruptible Power Supplies
zHigh Speed Power Switching
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH86N30T
IXFT86N30T
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 70 115 S
Ciss 11.3 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 720 pF
Crss 87 pF
td(on) 16 ns
tr 18 ns
td(off) 54 ns
tf 15 ns
Qg(on) 180 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 48 nC
Qgd 50 nC
RthJC 0.15 °C/W
RthCS TO-247 0.21 °C/W
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
e
∅ P
TO-247 (IXFH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 (IXFT) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 86 A
ISM Repetitive, Pulse Width Limited by TJM 340 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 150 ns
IRM 8.5 A
QRM 460 nC
IF = 43A, -di/dt = 100A/μs,
VR = 100V, VGS = 0V
© 2009 IXYS CORPORATION, All Rights Reserved
IXFH86N30T
IXFT86N30T
Fi g . 1. Ou tpu t C h ar ac ter i sti cs @ TJ = 25ºC
0
10
20
30
40
50
60
70
80
90
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6
V
5
V
Fi g . 2. Exten ded Ou tp ut C h ar acteri sti cs @ TJ = 25ºC
0
20
40
60
80
100
120
140
160
180
200
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5
V
6
V
5.5
V
Fi g . 3. Ou tp ut C h ar act er i sti cs @ TJ = 125ºC
0
10
20
30
40
50
60
70
80
90
0123456789
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
6
V
5
V
Fig. 4. RDS(on) Nor mal i z ed to I D = 43A Valu e
vs. Ju n c ti o n Temper at u r e
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 86A
I
D
= 43A
Fig. 5. RDS(on) Nor mal iz ed to I D = 43A Val u e
vs. D rai n C u r ren t
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
3.8
0 20 40 60 80 100 120 140 160 180 200
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10
V
T
J
= 125ºC
T
J
= 25ºC
Fi g. 6. Maximum Dr ain C u rr en t
vs. C a se Tempe r atu r e
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH86N30T
IXFT86N30T
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
3.0 3.5 4.0 4.5 5.0 5.5 6.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
180
200
0 20 40 60 80 100 120 140
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
In tri n sic D i o d e
0
40
80
120
160
200
240
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 150V
I
D
= 43A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g. 12. Fo r war d-B i as Safe Operati n g Area
0.1
1.0
10.0
100.0
1,000.0
1 10 100 1000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms
100µs
10ms
R
DS(
on
)
Limit
100m
© 2009 IXYS CORPORATION, All Rights Reserved
IXFH86N30T
IXFT86N30T
Fig. 14. Resistive T urn-on
Rise T ime vs. Drain Current
14
16
18
20
22
24
26
40 45 50 55 60 65 70 75 80 85 90
I
D
- Amperes
t
r - Nanoseconds
R
G
= 3.3 , V
GS
= 15V
V
DS
= 150V
T
J
= 125ºC
T
J
= 25ºC
Fi g. 15. R esi stive Tu r n-o n
Swit ch i n g Times vs. Gate R e si stan c e
18
19
20
21
22
23
24
25
26
2 4 6 8 10 12 14 16 18
R
G
- Ohms
t
r
- Nanoseconds
13
14
14
15
15
16
16
17
17
t
d
(
o n
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 150V
I
D
= 86
A
I
D
= 43
A
Fi g . 16 . R esi s ti ve Tu r n -o ff
Swit ch i n g Times vs. Ju n cti on Temp er atu re
12
14
16
18
20
22
24
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f - Nanoseconds
45
50
55
60
65
70
75
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3, V
GS
= 15V
V
DS
= 150V
I
D
= 43A
I
D
= 86A
Fi g . 17 . R esi s ti ve Tu r n -o ff
Swit ch i n g Times vs. D r ai n C u r ren t
13
14
15
16
17
18
19
20
40 45 50 55 60 65 70 75 80 85 90
I
D
- Amperes
t
f
- Nanoseconds
45
50
55
60
65
70
75
80
t d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3, V
GS
= 15V
V
DS
= 150V
T
J
= 25ºC
T
J
= 125ºC
Fig . 13. R e si sti ve Tur n -o n
Ri se Time v s. Ju n ctio n Temp er at u r e
14
16
18
20
22
24
26
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r - Nanoseconds
R
G
= 3.3 , V
GS
= 15V
V
DS
= 150V
I
D
= 86
A
I
D
= 43
A
Fig. 18. Resistive T urn-off
Switchi n g Ti mes vs. Gate R esistan ce
10
12
14
16
18
20
22
24681012141618
R
G
- Ohms
t
f - Nanoseconds
50
55
60
65
70
75
80
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 150V
I
D
= 86A
I
D
= 43A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFH86N30T
IXFT86N30T
IXYS REF: F_86N30T(8W)10-21-09
Fig . 19. Maximu m Tr an sien t Th er mal I mp edan ce
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
