General Description
The MAX1614 drives high-side, n-channel power
MOSFETs to provide battery power-switching functions
in portable equipment. The n-channel power MOSFETs
typically have one-third the on-resistance of p-channel
MOSFETs of similar size and cost. An internal micropower
regulator and charge pump generate the high-side drive
output voltage, while requiring no external components.
The MAX1614 also features a 1.5%-accurate low-battery
comparator that can be used to indicate a low-battery
condition, provide an early power-fail warning to the
system microprocessor, or disconnect the battery from the
load, preventing deep discharge and battery damage. An
internal latch allows for pushbutton on/off control with very
low current consumption. Off-mode current consumption
is only 6μA while normal operation requires less than
25μA. The MAX1614 is available in the space-saving
μMAX® package that occupies about 60% less space
than a standard 8-pin SO.
Applications
●Notebook Computers
●Portable Equipment
●Hand-Held Instruments
●Battery Packs
Benets and Features
●Integration Provides a Simple-to-Use Solution
• Requires No External Components
• Internal On/Off Latch Facilitates Pushbutton
Control
• 1.5% Accurate Low-Battery Detector Protects
Battery and Data Stored in Memory
• Controlled Turn-On for Low Inrush Current
●Low Power Consumption Extends Battery Life
• 25µA (max) Quiescent Current
• 6µA (max) Shutdown Current
●µMAX Package is 60% Smaller Than Typical 8-Pin
SO Solution
●Supports Typical Requirements of Portable, Battery-
Powered Designs
• 5V to 26V Input Voltage Range
• Drives Single or Back-to-Back MOSFETs
19-1176; Rev 3; 5/15
*Contact factory for dice specifications.
+Denotes a lead(Pb)-free/RoHS-compliant package.
Devices are also available in a tape-and-reel package.
Specify tape-and-reel by adding “T” to the part number when
μMAX is a registered trademark of Maxim Integrated Products,
Inc. ordering.
μMAX is a registered trademark of Maxim Integrated Products,
Inc.
PART TEMP RANGE PIN-PACKAGE
MAX1614C/D 0°C to +70°C Dice*
MAX1614EUA+ -40°C to +85°C 8 µMAX
MAX1614
OFF
LBO
GND
LBI
BATT
SRCGATE
ON
N N LOAD
OPTIONAL FOR
REVERSE CURRENT
PROTECTION
R1
R2
1+
2
3
4
8
7
6
5
BATT
SRC
GATE
GND
LBI
LBO
OFF
ON
MAX1614
µMAX
TOP VIEW
MAX1614 High-Side, n-Channel MOSFET
Switch Driver
Typical Operating Circuit
Pin Conguration
Ordering Information
BATT, SRC to GND.................................................-0.3V to +30V
GATE to SRC..........................................................-0.3V to +12V
GATE to GND .........................................................-0.3V to +36V
GATE + SRC Sink Current, Continuous .............................2.7mA
LBI, LBO, ON, OFF to GND....................................-0.3V to +12V
LBO Current ..........................................................................5mA
Continuous Power Dissipation (TA = +70°C)
μMAX (derate 4.10mV/°C above +70°C).....................330mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range .............................-65°C to +160°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
(VBATT = 15V, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
BATT Operating Range VGATE - VSRC > 3V, SRC = BATT 5 26 V
BATT Shutdown Current ISHDN VBATT = 26V, ON = OFF = unconnected,
IGATE = 0A, device latched off, VLBI = 1.5V 47 µA
Quiescent Current IBATT +
ISRC
VBATT = 15V, ON = OFF = unconnected,
IGATE = 0A, device latched on, VLBI = 1.5V,
SRC = BATT
17 30
µA
VBATT = 26V, ON = OFF = unconnected,
IGATE = 0A, device latched on, VLBI = 1.5V,
SRC = BATT
21 40
INTERNAL CHARGE PUMP
GATE-Drive Voltage VGS
Measured from GATE to SRC, VBATT = 15V,
IGATE = 0A 6.5 89.0
V
Measured from GATE to SRC, VBATT = VSRC
= 5V, IGATE = 1.5μA 3
GATE-Drive Output Current VGATE = VSRC = 15V 15 60 µA
GATE-Discharge Current VGATE = 4V, device latched off 0.5 2 mA
LOW-BATTERY COMPARATOR
LBI Trip Level VTH LBI input falling 1.182 1.20 1.218 V
LBI Trip Hysteresis 0.02VTH V
Minimum VBATT for Valid LBO Tested at VLBI = VBATT/4 0.9 4 V
LBI Input Current ILBI VLBI = 1.3V 10 nA
LBO Low Voltage VOL ISINK = 1mA 0.4 V
LBO High Leakage VOH VLBO = 11.5V 0.5 µA
CONTROL INPUTS (ON, OFF)
Minimum Input Pullup Current Tested at 2V 0.5 µA
Maximum Input Pullup Current Tested at 0.6V 1.5 2 µA
Input Low Voltage VIL VBATT = 5V 0.6 V
Input High Voltage VIH VBATT = 26V 2.0 V
Minimum Input Pulse Width tPW VBATT = 5V 0.5 1.0 μs
MAX1614 High-Side, n-Channel MOSFET
Switch Driver
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Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Electrical Characteristics
(VBATT = 15V, TA = -40°C to +85°C, unless otherwise noted. (Note 1)
Note 1: Specifications to TA = -40°C are guaranteed by design and not production tested.
(TA = +25°C, unless otherwise noted.)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
BATT Operating Range VGATE - VSRC > 3V, SRC = BATT 5.0 26 V
BATT Shutdown Current ISHDN VBATT = 26V, ON = OFF = unconnected,
IGATE = 0A, device latched off, VLBI = 1.5V 8 µA
Quiescent Current IBATT +
ISAC
VBATT = 26V, ON = OFF = unconnected,
IGATE = 0A, device latched on, VLBI = 1.5V 40 µA
INTERNAL CHARGE PUMP
GATE-Drive Voltage VGS
Measured from GATE to SRC, VBATT = 15V,
IGATE = 0A 6.5 9.0
V
Measured from GATE to SRC, VBATT = 5.25V,
IGATE = 1.5μA, VSRC = 5.25V 3
GATE-Drive Output Current VGATE = VSRC = 15V 15 60 µA
LOW-BATTERY COMPARATOR
LBI Trip Level VTH LBI input falling 1.176 1.20 1.224 V
4.0
1.0
5 30
OFF SUPPLY CURRENT
vs. VBATT
MAX1614 toc02
VBATT (V)
SHUTDOWN CURRENT (µA)
20
3.0
2.0
10 15
2.5
1.5
3.5
25
TA = +25°C
TA = -40°C
TA = +85°C 1.30
1.16
-40 100
LOW-BATTERY THRESHOLD
vs. TEMPERATURE
MAX1614 toc03
TEMPERATURE (°C)
LBI THRESHOLD (V)
40
1.24
1.20
-20 0
1.22
1.18
1.26
1.28
8020 60
VBATT = 15V
VLBI RISING
VLBI FALLING
22
6
5 30
ON SUPPLY CURRENT
vs. VBATT
MAX1614 toc01
VBATT (V)
SUPPLY CURRENT (µA)
20
14
10
10 15
18
20
12
8
16
25
TA = +85°C
TA = +25°C
TA = -40°C
MAX1614 High-Side, n-Channel MOSFET
Switch Driver
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Electrical Characteristics
Typical Operating Characteristics
(TA = +25°C, unless otherwise noted.)
34
26
-40 0 80 100
GATE-CHARGING CURRENT
vs. TEMPERATURE
28
27
MAX1614 toc03
TEMPERATURE (°C)
GATE-CHARGING CURRENT (µA)
40-20 6020
32
30
33
31
29
VBATT = 15V
30
22
5 30
GATE-CHARGING CURRENT
vs. BATT VOLTAGE
MAX1614 toc06
VBATT (V)
GATE-CHARGING CURRENT (µA)
25
27
25
10 15
26
24
28
29
23
20
TA = +85°C
TA = -40°C
GATE AND SOURCE TRANSITIONS
FOR TYPICAL MOSFET LOAD
MAX1614 toc07
VOFF
5V/div
Si9936 MOSFETS
ILOAD = 1A
ON = GND
10ms/div
VSRC
VSRC
GATE AND SOURCE TRANSITIONS
FOR TYPICAL MOSFET LOAD
MAX1614 toc08
VOFF
5V/div
0V
0V
Si9936 MOSFETS
ILOAD = 1A
Ciss = 400pF
ON = GND
10µs/div
VSRC
VGATE
2.5
-0.5
0 20
GATE-DISCHARGE CURRENT
vs. GATE VOLTAGE
MAX1614 toc04
VGATE (V)
GATE-DISCHARGE CURRENT (mA)
12
1.5
0.5
4 8
1.0
0
2.0
162 146 10 18
TA = +85°C
TA = +25°C
TA = -40°C
GATE TURN-OFF TRANSITION
FOR TYPICAL MOSFET LOAD
MAX1614 toc09
VOFF
5V/div
Si9936 MOSFETS
ILOAD = 1A
Ciss = 400pF
ON = GND
20µs/div
VSRC
VGATE
MAX1614 High-Side, n-Channel MOSFET
Switch Driver
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Typical Operating Characteristics (continued)
Detailed Description
The MAX1614 uses an internal, monolithic charge pump
and low-dropout linear regulator to supply the required
8V VGS voltage to fully enhance an n-channel MOSFET
high-side switch (Figure 1). The charge pump typically
supplies 30μA, charging 800pF of gate capacitance in
400μs (VBATT = 15V). For slower turn-on times, simply
add a small capacitor between the GATE and SRC pins.
When turned off, GATE and SRC pull low and typically
discharge an 800pF gate capacitance in 80μs.
The MAX1614 provides separate on/off control inputs (ON
and OFF). ON and OFF connect, respectively, to the SET
and RESET inputs of an internal flip-flop. When ON is
pulsed low (with OFF = high), the internal charge pump
turns on, and GATE is pumped to 8V above SRC, turning
on the external MOSFETs. The charge pump maintains
gate drive to the external MOSFETs until OFF is pulsed low.
When this happens, the internal charge pump turns off, and
GATE discharges to ground through an internal switch. For
slower turn-on times, simply add a small capacitor.
Applications Information
Connecting ON/OFF to 3V or 5V Logic
ON and OFF internally connect to 2μA max pullup current
sources (Figure 1). The open-circuit voltage for ON and
OFF ranges from 7V to 10.5V (nominally 8.5V). Since the
current sources are relatively weak, connecting ON and
OFF directly to logic powered from lower voltages (e.g.,
3V or 5V) poses no problem if the gate outputs driving
these pins can sink at least 2μA while high.
Although the MAX1614 shutdown function was designed
to operate with a single pushbutton on/off switch, it can
also be driven by a single gate. Connect ON to GND and
drive OFF directly (Figure 2).
Maximum Switching Rate
The MAX1614 is not intended for fast switching applica-
tions. In fact, it is specifically designed to limit the rate of
change of the load current, ΔI/Δt. The maximum switching
rate is limited by the turn-on time, which is a function of
the charge-pump output current and the total capacitance
on GATE (CGATE). Calculate the turn-on time as a func-
tion of external MOSFET gate capacitance using the
Gate Charging Current vs. VBATT graph in the Typical
Operating Characteristics. Since turn-off time is small
compared to turn-on time, the maximum switching rate is
approximately 1/tON.
Adding Gate Capacitance
The charge pump uses an internal monolithic trans-
fer capacitor to charge the external MOSFET gates.
Normally, the external MOSFET’s gate capacitance is suf-
ficient to serve as a reservoir capacitor. If the MOSFETs
are located at a significant distance from the MAX1614,
place a local bypass capacitor (100pF typ) across the
GATE and SRC pins. For slower turn-on times, simply
add a small capacitor between GATE and SRC.
PIN
NAME
FUNCTION
1
ON SET
Input to the On/Off Latch. Pulse
ON
low with
OFF
high to turn on the external MOSFET switch.
When
both
ON
and
OFF
are low, the part is off.
2OFF RESET
Input to the On/Off Latch. Pulse
OFF
low with
ON
high to turn off the external MOSFET switch.
When
both
ON
and
OFF
are low, the part is off.
3LBO
Open-Drain, Low-Battery Comparator Output.
LBO
is low when VLBI is below the trip
point.
4 LBI
Low-Battery
Comparator Input.
LBO
goes low when VLBI falls below 1.20V (typ). Connect a voltage-
divider
between BATT, LBI, and GND to set the battery
undervoltage
trip threshold (see Typical Operating Circuit).
5
GND System Ground
6
GATE Gate-Drive Output. Connect to the gates of external, n-channel
MOSFETs.
When the
MAX1614
is off, GATE
actively pulls to GND.
7
SRC Source Input. Connect to the sources of external, n-channel
MOSFETs.
When the
MAX1614
is off, SRC
actively pulls to
GND.
8
BATT Battery Input. Connect to a battery voltage between 5V and
26V.
MAX1614 High-Side, n-Channel MOSFET
Switch Driver
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Pin Description
Figure 1. Functional Diagram
8.5V
LDO
50kHz
OSC
SOFT
START
ON
0
0
1
1
OFF
0
1
0
1
STATE
OFF
ON
OFF
LAST VALID
STATE
P
BATT
POWER-ON
RESET (BATT < 2V)
1.21V
LBI
ON
N
N
GND
N
P
1µA1µA
GATE
SRC
CPUMP
LBO
OFF
ON MAX1614
MAX1614 High-Side, n-Channel MOSFET
Switch Driver
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On/Off Control with a Single Pushbutton
Switch
The MAX1614’s separate on and off inputs allow maximum
flexibility in controlling the external MOSFETs. Connect
a pushbutton switch to the ON pin and microcontroller
(μC) I/O for single-button control. Connect the OFF pin to
another μC I/O pin. On the first button depression, the
MAX1614 turns on automatically; the signal is also detect-
ed by the μC. When the button is depressed a second time,
the μC wraps around and turns off the MAX1614 by pulling
low on the OFF pin (Figure 3).
Simple Low-Battery Disconnect/Fresh
Battery Reconnect Circuit
A simple undervoltage disconnect circuit is often desirable
to prevent damage to secondary batteries due to repeated
deep discharge or cell reversal. The Typical Operating
Circuit turns off the MAX1614, disconnecting the battery
from the load when the battery voltage falls below the mini-
mum battery voltage required, (VLOW BATT). VLOW BATT =
(R1 + R2)/R2 x VTH where VTH is the LBI input threshold
(1.20V typ). When fresh cells are installed or the batteries
are recharged, a μC or pushbutton reconnects the load.
Using LBO to Generate Early Power-Fail
Interrupt
Many applications require an early warning indicating
that power is failing so that the microprocessor (μP) can
take care of any “housekeeping” functions (storing current
settings in memory, etc.) before the power fails. Connect
LBI through a resistor divider across the battery, and
connect LBO to the μP nonmaskable interrupt (NMI).
Set the threshold so that LBO goes low when the battery
decays to a point where regulation begins to degrade
(Figure 4). VLOW BATT = (R1 + R2)/R2 x VTH, where VTH
is the LBI input threshold (1.20V typ). Once housekeeping
is complete, the μP can turn off the load by pulling OFF low.
Figure 2. Single-Line Shutdown Control
Figure 3. Single-Pushbutton On/Off Control
Figure 4. Using LBO to Generate Early Power-Fail Interrupt
MAX1614
SHUTDOWN
(CMOS OR TTL LOGIC)
GND ON
OFF
MAX1614
OFF
LBO
GND
LBI
BATT
SRCGATE
ON
N N LOAD
TO µC
R1
R2
MAX1614
OFF
LBO
GND
LBI
BATT
SRCGATE
ON
N N LOAD
TO µC
PORT PINS
TO µC
NONMASKABLE
INTERRUPT
R1
R2
MAX1614 High-Side, n-Channel MOSFET
Switch Driver
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Increasing Low-Battery Comparator
Hysteresis
The MAX1614 contains an on-chip comparator with 2%
hysteresis for low-battery detection. If more than 2%
hysteresis is needed on the low-battery comparator and
LBO is connected to OFF, use the circuit in Figure 5 to add
hysteresis. The circuit of Figure 5 shows LBO controlling
an n-channel MOSFET that shorts R2 to add positive feed-
back to the trip point. This is necessary to prevent loading
down the 1μA pullup at OFF (Figure 1).
Figure 5. Increasing Hysteresis of the Battery Disconnect
Circuit
PACKAGE
TYPE
PACKAGE
CODE
OUTLINE
NO.
LAND
PATTERN NO.
8 μMAX U8+1 21-0036 90-0092
MAX1614
OFF
LBO
GND
LBI
SRCGATE
N
ON
BATT
LOAD
R2N
2N7002
(SOT23)
R1
R3
R1 = 909kΩ
R2, R3 = 150kΩ
VL = 8.5V
VH = 9.8V
HYSTERESIS = 6%
FALLING TRIP POINT VL
VL = VTH
( )
RISING TRIP POINT VH
VH = VTH
( )
R1 + R2 + R3
R3
R1 + R3
R3
MAX1614 High-Side, n-Channel MOSFET
Switch Driver
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Package Information
For the latest package outline information and land patterns
(footprints), go to www.maximintegrated.com/packages. Note
that a “+”, “#”, or “-” in the package code indicates RoHS status
only. Package drawings may show a different suffix character, but
the drawing pertains to the package regardless of RoHS status.
Chip Information
SUBSTRATE CONNECTED TO GND
REVISION
NUMBER
REVISION
DATE DESCRIPTION PAGES
CHANGED
0 12/96 Initial release —
1 6/11 Added automotive-qualied part to the Ordering Information, added soldering
temperature to the Absolute Maximum Ratings.1, 2
2 4/15 Deleted MAX1614EUA/V+ from Ordering Information and /V footnote below table 1
3 5/15 Updated Benets and Features section
Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent licenses
are implied. Maxim Integrated reserves the right to change the circuitry and specications without notice at any time. The parametric values (min and max limits)
shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance.
Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc.
MAX1614 High-Side, n-Channel MOSFET
Switch Driver
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Revision History
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim Integrated’s website at www.maximintegrated.com.
