2N3250 2N3250A
2N3251 2N3251A
SILICON
PNP TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3250, 2N3251
series devices are silicon PNP transistors designed for
small signal, general purpose switching applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) 2N3250 2N3250A
SYMBOL 2N3251 2N3251A UNITS
Collector-Base Voltage VCBO 50 60 V
Collector-Emitter Voltage VCEO 40 60 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 200 mA
Power Dissipation PD 360 mW
Power Dissipation (TC=25°C) PD 1.2 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JC 146 °C/W
Thermal Resistance JA 486 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEV V
CE=40V, VEB=3.0V 20 nA
BVCBO I
C=10µA (2N3250, 2N3251) 50 V
BVCBO I
C=10µA (2N3250A, 2N3251A) 60 V
BVCEO I
C=10mA (2N3250, 2N3251) 40 V
BVCEO I
C=10mA (2N3250A, 2N3251A) 60 V
BVEBO I
E=10µA 5.0 V
VCE(SAT) I
C=10mA, IB=1.0mA 0.25 V
VCE(SAT) I
C=50mA, IB=5.0mA 0.50 V
VBE(SAT) I
C=10mA, IB=1.0mA 0.60 0.90 V
VBE(SAT) I
C=50mA, IB=5.0mA 1.20 V
2N3250 2N3251
2N3250A 2N3251A
MIN MAX MIN MAX
hFE V
CE=1.0V, IC=0.1mA 40 - 80 -
hFE V
CE=1.0V, IC=1.0mA 45 - 90 -
hFE V
CE=1.0V, IC=10mA 50 150 100 300
hFE V
CE=1.0V, IC=50mA 15 - 30 -
TO-18 CASE
R1 (4-March 2014)
www.centralsemi.com
2N3250 2N3250A
2N3251 2N3251A
SILICON
PNP TRANSISTORS
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
TO-18 CASE - MECHANICAL OUTLINE
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
2N3250 2N3251
2N3250A 2N3251A
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
fT V
CE=20V, IC=10mA, f=100MHz 250 - 300 - MHz
Cob V
CB=10V, IE=0, f=100kHz - 6.0 - 6.0 pF
Cib V
EB=1.0V, IC=0, f=100kHz - 8.0 - 8.0 pF
NF VCE=5.0V, IC=100A,
R
s=1.0k, f=100Hz - 6.0 - 6.0 dB
ton V
CC=3.0V, VBE=0.5V,
I
C=10mA, IB1=1.0mA - 70 - 70 ns
toff V
CC=3.0V, IC=10mA,
I
B1=IB2=1.0mA - 225 - 250 ns
www.centralsemi.com
R1 (4-March 2014)
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(001)
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