©2001 Fairchild Semiconductor Corporation
FYV0203S/DN/DP/DS
Rev. A, September 2001
Schottky Diode
Absolute Maximu m Rating s TA=25°
°°
°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics TA=25°
°°
°C unless otherwise noted
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Symbol Parameter Value Units
VRRM Maximum Repet itive Reverse Voltage 30 V
IF(AV) Average Rectified Forward Current 0.2 A
IFSM Non-repetitive Peak Surge Current
Pulse Width = 1.0s 0.6 A
TSTG Storage Temperature Range -65 to +150 °C
TJOperating Junction Temperature 150 °C
Symbol Parameter Value Units
RθJA Thermal Resistance, Junction to Ambient 430 °C/W
Symbol Parameter Min. Typ. Max. Units
VF *Forward Voltage Drop
IF = 0.1mA
IF = 1mA
IF = 10mA
IF = 30mA
IF = 100mA
IF = 200mA
-
-
-
-
-
-
210
270
340
390
485
600
240
320
400
500
800
1000
mV
IR *Reverse Current
@ Rated VRTA = 25 °C
TA= 125 °C-
-0.2
130 2
-
uA
CTTotal Capacitance
VR = 1V , f = 1.0 MHz - - 10 pF
trr Reverse Recovery Time
IF = IR = 10mA, IRR = 1mA, RL = 100Ω--5ns
FYV0203S/DN/DP/DS
3
1
2
SOT-23
Connection Diagram
2
Y
B
1
3
1
3
1 2 FYV0203DP
3
1 2 FYV0203D
S
3
1 2 FYV0203DN
3
1 FYV0203S
Marking
FYV0203S = YB1 FYV0203DP = YB3
FYV0203DN = YB2 FYV0203DS = YB4
©2001 Fairchild Semiconductor Corporation Rev. A, September 2001
FYV0203S/DN/DP/DS
Typical Characteristics
Figure 1. Typ ic al For w ar d Vol ta ge Character istics
Figure 3. Total Diode Capacitance
Figure 2. Typical Reverse Current
vs. Rever se Voltage
0.0001
0.001
0.01
0.1
0.0 0.2 0.4 0.6 0.8 1.0
TJ=125 oC
TJ=75 oC
TJ=25 oC
Forward Voltage Drop, VF[V]
Forward Current, I F[A]
012345678910
1
2
3
4
5
6
7
8
9
10
11
12
TJ=25 oC
Total Diode C ap acitance , C T[pF]
Reverse Voltage, VR[V]
0102030
0.01
0.1
1
10
100
1000
TJ=1 25 oC
TJ=75 oC
TJ=25 oC
Reverse Current, IR[㎂]
Reverse Voltage, VR[V]
©2001 Fairchild Semiconductor Corporation Rev. A, September 2001
FYV0203S/DN/DP/DS
Package Dimensions
Dimensions in Millimeters
0.96~1.14
0.12
0.03~0.10
0.38 REF
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.023
0.20 MIN
0.40 ±0.03
SOT-23
Rev. H4©2001 Fairchild Semiconductor Corporation
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