AUIRF8736M2TR AUTOMOTIVE GRADE Automotive DirectFET(R) Power MOSFET V(BR)DSS RDS(on) typ. max. ID (Silicon Limited) Qg Advanced Process Technology Optimized for Automotive Motor Drive, DC-DC and other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling 175C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Lead Free, RoHS Compliant and Halogen Free Automotive Qualified * SC M2 DirectFET(R) ISOMETRIC M4 Applicable DirectFET(R) Outline and Substrate Outline SB 40V 1.3m 1.9m 137A 136nC M4 L4 L6 L8 Description The AUIRF8736M2 combines the latest Automotive HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFET(R) packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET(R) package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET(R) package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET(R) Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET(R) packaging platform coupled with the latest silicon technology allows the AUIRF8736M2 to offer substantial system level savings and performance improvement specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications. Base Part Number Package Type AUIRF8736M2 DirectFET2 M-CAN Standard Pack Form Quantity Tape and Reel Orderable Part Number AUIRF8736M2TR 4800 Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. VDS VGS ID @ TC = 25C ID @ TC = 100C ID @ TA = 25C IDM PD @TC = 25C PD @TA = 25C EAS EAS (Tested) IAR EAR TP TJ TSTG *Qualification 1 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Soldering Temperature Operating Junction and Storage Temperature Range Max. 40 20 137 97 27 565 63 2.5 82 254 See Fig. 14, 15, 22a, 22b Units V 270 -55 to + 175 mJ A W mJ A C standards can be found at http://www.irf.com/ www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback January 14, 2014 AUIRF8736M2TR Thermal Resistance Symbol RJA RJA RJA RJ-Can RJ-PCB Parameter Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Can Junction-to-PCB Mounted Linear Derating Factor Typ. --- 12.5 20 --- 1.0 Max. 60 --- --- 2.4 --- 0.42 Units C/W W/C Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 --- --- V VGS = 0V, ID = 250A --- 0.03 --- V/C Reference to 25C, ID = 1.0mA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- 1.3 1.9 Static Drain-to-Source On-Resistance RDS(on) m VGS = 10V, ID = 85A VGS(th) Gate Threshold Voltage 2.2 --- 3.9 V VDS = VGS, ID = 150A Gate Threshold Voltage Coefficient --- -9.3 --- mV/C VGS(th)/TJ gfs Forward Transconductance 150 --- --- S VDS = 10V, ID = 85A RG Internal Gate Resistance --- 0.73 --- --- --- 1.0 VDS = 40V, VGS = 0V Drain-to-Source Leakage Current A IDSS --- --- 150 VDS = 40V, VGS = 0V, TJ = 125C IGSS Gate-to-Source Forward Leakage --- --- 100 VGS = 20V nA Gate-to-Source Reverse Leakage --- --- -100 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge --- 136 204 VDS = 20V VGS = 10V Qgs1 Gate-to-Source Charge --- 28 --- Qgs2 Gate-to-Source Charge --- 10 --- nC ID = 85A Qgd Gate-to-Drain ("Miller") Charge --- 45 --- Qgodr Gate Charge Overdrive --- 53 --- Qsw Switch Charge (Qgs2 + Qgd) --- 55 --- Qoss Output Charge --- 41 --- nC VDS = 32V, VGS = 0V td(on) Turn-On Delay Time --- 36 --- VDD = 40V, VGS = 10V ID = 85A tr Rise Time --- 119 --- ns td(off) Turn-Off Delay Time --- 82 --- RG = 6.8 tf Fall Time --- 83 --- Ciss Input Capacitance --- 6867 --- VGS = 0V VDS = 25V Coss Output Capacitance --- 1045 --- pF = 1.0 MHz Crss Reverse Transfer Capacitance --- 682 --- Coss eff. Effective Output Capacitance --- 1362 --- VGS = 0V, VDS = 0V to 32V 2 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback January 14, 2014 AUIRF8736M2TR Diode Characteristics Symbol Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) Diode Forward Voltage VSD trr Reverse Recovery Time Qrr Reverse Recovery Charge Surface mounted on 1 in. square Cu board (still air). 3 Min. --- Typ. --- --- --- --- --- --- --- 46 59 Mounted to a PCB with small clip heatsink (still air) www.irf.com (c) 2014 International Rectifier Max. Units Conditions 137 MOSFET symbol A showing the integral reverse 565 A p-n junction diode. 1.3 V TJ = 25C, IS = 85A, VGS = 0V --- ns IF = 85A, VDD = 25V --- nC dv/dt = 100A/s Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air). Submit Datasheet Feedback January 14, 2014 AUIRF8736M2TR 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 1 4.5V 100 BOTTOM 4.5V 10 60s PULSE WIDTH 60s PULSE WIDTH Tj = 175C Tj = 25C 1 0.1 0.1 1 10 0.1 100 5.0 ID = 85A 4.0 3.0 T J = 125C 2.0 T J = 25C 0.0 4 6 8 10 12 14 16 100 18 2.0 T J = 125C 1.8 1.6 1.4 T J = 25C 1.2 1.0 0 20 20 40 VGS, Gate -to -Source Voltage (V) 60 80 100 120 140 ID, Drain Current (A) Fig. 3 Typical On-Resistance vs. Gate Voltage Fig. 4 Typical On-Resistance vs. Drain Current 1000 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig. 2 Typical Output Characteristics RDS(on), Drain-to -Source On Resistance ( m) RDS(on), Drain-to -Source On Resistance (m ) Fig. 1 Typical Output Characteristics 1.0 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) 100 T J = -40C T J = 25C T J = 175C 10 VDS = 10V 60s PULSE WIDTH 1.0 3 4 5 6 7 8 VGS, Gate-to-Source Voltage (V) Fig 5. Transfer Characteristics 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V www.irf.com (c) 2014 International Rectifier 1.6 ID = 85A VGS = 10V 1.4 1.2 1.0 0.8 0.6 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C) Fig 6. Normalized On-Resistance vs. Temperature Submit Datasheet Feedback January 14, 2014 AUIRF8736M2TR 1000 4.0 ISD, Reverse Drain Current (A) VGS(th) , Gate threshold Voltage (V) 4.5 3.5 3.0 ID ID ID ID 2.5 = 150A = 250A = 1.0mA = 1.0A 2.0 T J = 175C 100 10 T J = 25C 1 VGS = 0V 1.5 0.1 -75 -50 -25 0 25 50 75 100 125 150 175 0.2 T J , Temperature ( C ) Fig. 7 Typical Threshold Voltage vs. Junction Temperature 1.0 1.2 1.4 100000 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd 250 Coss = Cds + Cgd TJ = 25C 200 150 TJ = 175C 100 50 10000 VDS = 10V 20s PULSE WIDTH 0 20 40 60 Ciss Coss Crss 1000 100 1 80 100 120 140 160 180 Fig 9. Typical Forward Transconductance vs. Drain Current 10 100 VDS, Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) Fig 10. Typical Capacitance vs. Drain-to-Source Voltage 140 14.0 ID= 85A 12.0 VDS= 32V VDS= 20V VDS= 8.0V 10.0 8.0 6.0 4.0 120 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 0.8 Fig 8. Typical Source-Drain Diode Forward Voltage 0 100 80 60 40 20 2.0 0 0.0 0 20 40 60 80 100 120 140 160 180 QG, Total Gate Charge (nC) Fig 11. Typical Gate Charge vs. Gate-to-Source Voltage 5 0.6 VSD, Source-to-Drain Voltage (V) C, Capacitance (pF) GFS , Forward Transconductance (S) 300 0.4 www.irf.com (c) 2014 International Rectifier 25 50 75 100 125 150 175 T C , Case Temperature (C) Fig 12. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback January 14, 2014 AUIRF8736M2TR 400 EAS , Single Pulse Avalanche Energy (mJ) ID, Drain-to-Source Current (A) 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) 1000 100sec 1msec 100 10 10msec 1 0.1 DC Tc = 25C Tj = 175C Single Pulse ID 12A 20A BOTTOM 85A TOP 300 200 100 0 0.01 0.1 1 10 25 100 50 75 100 125 150 175 Starting T J , Junction Temperature (C) VDS, Drain-to-Source Voltage (V) Fig 14. Maximum Avalanche Energy vs. Temperature Fig 13. Maximum Safe Operating Area Thermal Response ( Z thJC ) C/W 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) 100 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 tav (sec) Fig 16. Single Avalanche Event: Pulse Current vs. Pulse Width 6 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback January 14, 2014 AUIRF8736M2TR EAR , Avalanche Energy (mJ) 100 Notes on Repetitive Avalanche Curves , Figures 16, 17: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 18a, 18b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 16, 17). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 15) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 85A 80 60 40 20 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Fig 17. Maximum Avalanche Energy vs. Temperature Fig 18a. Unclamped Inductive Test Circuit PD (ave) = 1/2 ( 1.3*BV*Iav) = T/ ZthJC Iav = 2T/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 18b. Unclamped Inductive Waveforms VDD Fig 19a. Gate Charge Test Circuit Fig 20a. Switching Time Test Circuit 7 www.irf.com (c) 2014 International Rectifier Fig 19b. Gate Charge Waveform Fig 20b. Switching Time Waveforms Submit Datasheet Feedback January 14, 2014 AUIRF8736M2TR DirectFET(R) Board Footprint, M4 Outline (Medium Size Can, 4-Source Pads) Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. G = GATE D = DRAIN S = SOURCE D D S S S S G D D Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback January 14, 2014 AUIRF8736M2TR DirectFET(R) Outline Dimension, M4 Outline (Medium Size Can, 4-Source Pads) Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DIMENSIONS CODE A B C D E F G H J K L L1 M P R METRIC MIN MAX 6.25 6.35 4.80 5.05 3.85 3.95 0.35 0.45 0.58 0.62 0.78 0.82 0.78 0.82 0.78 0.82 0.38 0.42 1.10 1.20 2.30 2.40 3.50 3.60 0.68 0.74 0.09 0.17 0.02 0.08 IMPERIAL MAX MIN 0.250 0.246 0.189 0.199 0.156 0.152 0.018 0.014 0.024 0.023 0.032 0.031 0.031 0.032 0.031 0.032 0.015 0.017 0.043 0.047 0.094 0.090 0.138 0.142 0.027 0.029 0.003 0.007 0.001 0.003 Dimensions are shown in millimeters (inches) DirectFET(R) Part Marking "AU" = GATE AND AUTOMOTIVE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback January 14, 2014 AUIRF8736M2TR DirectFET(R) Tape & Reel Dimension (Showing component orientation) F E A B C D G H NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as AUIRF8736M2TR). For 1000 parts on 7" reel, order AUIRF8736M2TR1 LOADED TAPE FEED DIRECTION A H F C D B E NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H G DIMENSIONS IMPERIAL METRIC MIN MAX MIN MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 0.484 11.90 12.30 0.215 0.219 5.45 5.55 0.201 0.209 5.10 5.30 0.256 0.264 6.50 6.70 0.059 N.C 1.50 N.C 0.059 0.063 1.50 1.60 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback January 14, 2014 AUIRF8736M2TR Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model ESD Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Medium Can MSL1 Class M4 (+/- 800V) AEC-Q101-002 Human Body Model Class H2 (+/- 4000V) AEC-Q101-001 RoHS Compliant Yes Qualification standards can be found at International Rectifier's web site: http//www.irf.com/ Highest passing voltage. Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET(R) Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. 11 www.irf.com (c) 2014 International Rectifier Starting TJ = 25C, L = 0.023mH, RG = 50, IAS = 85A, Vgs = 10V. Pulse width 400s; duty cycle 2%. Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. R is measured at TJ of approximately 90C. Submit Datasheet Feedback January 14, 2014 AUIRF8736M2TR IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. 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Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105 12 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback January 14, 2014