AUIRF8736M2TR
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback January 14, 2014
Base Part Number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRF8736M2 DirectFET2 M-CAN Tape and Reel 4800 AUIRF8736M2TR
*Qualification standards can be found at http://www.irf.com/
AUTOMOTIVE GRADE
V(BR)DSS 40V
RDS(on) typ. 1.3m
ID (Silicon Limited) 137A
max. 1.9m
Qg 136nC
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Lead Free, RoHS Compliant and Halogen Free
Automotive Qualified *
DirectFET® ISOMETRIC
M4
Automotive DirectFET® Power MOSFET
Applicable DirectFET® Outline and Substrate Outline
SB SC M2 M4 L4 L6 L8
Description
The AUIRF8736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF8736M2 to offer substantial system level savings and performance improvement
specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing
techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current
automotive applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Max. Units
VGS Gate-to-Source Voltage ±20
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 137
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 97
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 27
IDM Pulsed Drain Current 565
PD @TC = 25°C Power Dissipation 63
W
PD @TA = 25°C Power Dissipation 2.5
EAS Single Pulse Avalanche Energy (Thermally Limited) 82
mJ
EAS (Tested) Single Pulse Avalanche Energy 254
IAR Avalanche Current See Fig. 14, 15, 22a, 22b A
EAR Repetitive Avalanche Energy
TP Peak Soldering Temperature 270 mJ
TJ Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
VDS Drain-to-Source Voltage 40 V
AUIRF8736M2TR
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Thermal Resistance
Symbol Parameter Typ. Max. Units
RJA Junction-to-Ambient ––– 60
RJA Junction-to-Ambient 12.5 –––
RJA Junction-to-Ambient 20 –––
RJ-Can Junction-to-Can ––– 2.4
RJ-PCB Junction-to-PCB Mounted 1.0 –––
Linear Derating Factor 0.42
°C/W
W/°C
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = 1.0mA
RDS(on) Static Drain-to-Source On-Resistance ––– 1.3 1.9 m VGS = 10V, ID = 85A
VGS(th) Gate Threshold Voltage 2.2 ––– 3.9 V VDS = VGS, ID = 150µA
VGS(th)/TJ Gate Threshold Voltage Coefficient ––– -9.3 ––– mV/°C
gfs Forward Transconductance 150 ––– ––– S VDS = 10V, ID = 85A
RG Internal Gate Resistance ––– 0.73 –––
IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 40V, VGS = 0V
––– ––– 150 VDS = 40V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge ––– 136 204 VDS = 20V
Qgs1 Gate-to-Source Charge ––– 28 –––
VGS = 10V
Qgs2 Gate-to-Source Charge ––– 10 ––– nC ID = 85A
Qgd Gate-to-Drain ("Miller") Charge ––– 45 –––
Qgodr Gate Charge Overdrive ––– 53 –––
Qsw Switch Charge (Qgs2 + Qgd) ––– 55 –––
Qoss Output Charge ––– 41 ––– nC VDS = 32V, VGS = 0V
td(on) Turn-On Delay Time ––– 36 –––
ns
VDD = 40V, VGS = 10V
tr Rise Time ––– 119 ––– ID = 85A
td(off) Turn-Off Delay Time ––– 82 ––– RG = 6.8
tf Fall Time ––– 83 –––
Ciss Input Capacitance ––– 6867 –––
pF
VGS = 0V
Coss Output Capacitance ––– 1045 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 682 ––– ƒ = 1.0 MHz
Coss eff. Effective Output Capacitance ––– 1362 ––– VGS = 0V, VDS = 0V to 32V
AUIRF8736M2TR
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Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 137 A MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 565 A integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 85A, VGS = 0V
trr Reverse Recovery Time ––– 46 ––– ns IF = 85A, VDD = 25V
Qrr Reverse Recovery Charge ––– 59 ––– nC dv/dt = 100A/µs
Surface mounted on 1 in.
square Cu board (still air).
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air).
Mounted to a PCB with
small clip heatsink (still air)
AUIRF8736M2TR
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0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
60µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
46810 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
0.0
1.0
2.0
3.0
4.0
5.0
RDS(on), Drain-to -Source On Resistance (m)
ID = 85A
TJ = 25°C
TJ = 125°C
3 4 5 6 7 8
VGS, Gate-to-Source Voltage (V)
1.0
10
100
1000
ID, Drain-to-Source Current (A)
TJ = -40°C
TJ = 25°C
TJ = 175°C
VDS = 10V
60µs PULSE WIDTH
Fig. 3 Typical On-Resistance vs. Gate Voltage
-60 -40 -20 020 40 60 80 100120140160180
TJ , Junction Temperature (°C)
0.6
0.80.8
1.01.0
1.21.2
1.41.4
1.61.6
1.8
0.6
0.8
1.0
1.2
1.4
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 85A
VGS = 10V
Fig. 4 Typical On-Resistance vs. Drain Current
0.1 110 100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
60µs PULSE WIDTH
Tj = 25°C
4.5V
Fig. 1 Typical Output Characteristics
Fig 5. Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature
020 40 60 80 100 120 140
ID, Drain Current (A)
1.0
1.2
1.4
1.6
1.8
2.0
RDS(on), Drain-to -Source On Resistance (m)
TJ = 125°C
TJ = 25°C
Fig. 2 Typical Output Characteristics
AUIRF8736M2TR
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0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
110 100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C, Capacitance (pF)
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
Fig 8. Typical Source-Drain Diode Forward Voltage
0 20 40 60 80 100 120 140 160 180
QG, Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
VGS, Gate-to-Source Voltage (V)
VDS= 32V
VDS= 20V
VDS= 8.0V
ID= 85A
Fig 11. Typical Gate Charge vs.
Gate-to-Source Voltage
25 50 75 100 125 150 175
TC , Case Temperature (°C)
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
ID, Drain Current (A)
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 10. Typical Capacitance vs. Drain-to-Source Voltage
0 20 40 60 80 100 120 140 160 180
ID, Drain-to-Source Current (A)
0
50
100
150
200
250
300
GFS, Forward Transconductance (S)
VDS = 10V
20µs PULSE WIDTH
TJ = 25°C
TJ = 175°C
Fig 9. Typical Forward Transconductance vs. Drain Current
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS(th), Gate threshold Voltage (V)
ID = 150µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
Fig. 7 Typical Threshold Voltage vs.
Junction Temperature
AUIRF8736M2TR
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Fig 16. Single Avalanche Event: Pulse Current vs. Pulse Width
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC ) °C/W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS(on)
100µsec
DC
Fig 13. Maximum Safe Operating Area
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
EAS , Single Pulse Avalanche Energy (mJ)
ID
TOP 12A
20A
BOTTOM 85A
Fig 14. Maximum Avalanche Energy vs. Temperature
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02
tav (sec)
0.1
1
10
100
1000
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
AUIRF8736M2TR
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Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 18a, 18b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 16, 17).
t
av = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
Z
thJC(D, tav) = Transient thermal resistance, see Figures 15)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
20
40
60
80
100
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 85A
Fig 17. Maximum Avalanche Energy vs. Temperature
Fig 18a. Unclamped Inductive Test Circuit Fig 18b. Unclamped Inductive Waveforms
Fig 19a. Gate Charge Test Circuit Fig 19b. Gate Charge Waveform
VDD
Fig 20a. Switching Time Test Circuit Fig 20b. Switching Time Waveforms
AUIRF8736M2TR
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
DirectFET® Board Footprint, M4 Outline
(Medium Size Can, 4-Source Pads)
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G
D
S
DD
D
SS
S
G = GATE
D = DRAIN
S = SOURCE
AUIRF8736M2TR
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DirectFET® Outline Dimension, M4 Outline
(Medium Size Can, 4-Source Pads)
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all
recommendations for stencil and substrate designs.
DirectFET® Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
PART NUMBER
LOGO
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
"AU" = GATE AND
AUTOMOTIVE MARKING
CODE
A
B
C
D
E
F
G
H
J
K
L
0.047
0.094
0.156
0.032
0.018
0.024
MAX
0.250
1.10
2.30
3.85
0.78
0.35
0.58
MIN
6.25
4.80
1.20
2.40
3.95
0.82
0.45
0.62
MAX
6.35
5.05
0.090
0.043
0.152
0.031
0.023
0.014
MIN
0.189
0.246
METRIC IMPERIAL
DIMENSIONS
0.78 0.82 0.0320.031
0.0320.78 0.82 0.031
0.015 0.0170.38 0.42
L1 0.1423.50 3.60 0.138
R0.0030.02 0.08 0.001
M
P
0.029
0.007
0.68
0.09
0.74
0.17
0.027
0.003
Dimensions are shown in
millimeters (inches)
0.199
AUIRF8736M2TR
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DirectFET® Tape & Reel Dimension (Showing component orientation)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
LOADED TAPE FEED DIRECTION
A
E
NOTE: CONTROLLING
DIMENSIONS IN MM CODE
A
B
C
D
E
F
G
H
F
B
C
IMPERIAL
MIN
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
1.60
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
METRIC
DIMENSIONS
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
0.063
D
H
G
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as AUIRF8736M2TR). For 1000 parts on 7"
reel, order AUIRF8736M2TR1
B
C
H
G
E
F
A
D
AUIRF8736M2TR
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† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Highest passing voltage.
Qualification Information†
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
Moisture Sensitivity Level Medium Can MSL1
ESD
Machine Model Class M4 (+/- 800V)††
AEC-Q101-002
Human Body Model Class H2 (+/- 4000V)††
AEC-Q101-001
RoHS Compliant Yes
Click on this section to link to the appropriate technical
paper.
Click on this section to link to the DirectFET® Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C measured with thermocouple mounted to top (Drain)
of part.
Repetitive rating; pulse width limited by max. junction
temperature.
Starting TJ = 25°C, L = 0.023mH, RG = 50, IAS = 85A,
Vgs = 10V.
Pulse width 400µs; duty cycle 2%.
Used double sided cooling, mounting pad with large
heatsink.
Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
R
is measured at TJ of approximately 90°C.
AUIRF8736M2TR
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IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
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tions is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Infor-
mation of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or
service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive
business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into
the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR
product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for
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Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring
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IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR
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tion “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will
not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
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