MCP73811/2 Simple, Miniature Single-Cell, Fully Integrated Li-Ion / Li-Polymer Charge Management Controllers Features Description * Complete Linear Charge Management Controller - Integrated Pass Transistor - Integrated Current Sense - Integrated Reverse Discharge Protection * Constant Current / Constant Voltage Operation with Thermal Regulation * High Accuracy Preset Voltage Regulation: + 1% * Voltage Regulation: 4.20V * Selectable Charge Current: - MCP73811: 85 mA / 450 mA * Programmable Charge Current: - MCP73812: 50 mA - 500 mA * Minimum External Components Required: - MCP73811: 2 Ceramic Capacitors - MCP73812: 2 Ceramic Capacitors and 1 Resistor * No Preconditioning * External End-of-Charge Control * Automatic Power-Down when Input Power Removed * Active High Charge Enable * Temperature Range: - -40C to +85C * Packaging: - 5-Lead SOT-23 The MCP73811/2 devices are linear charge management controllers that are designed for use in space limited and cost sensitive applications. The MCP73811/2 provide specific charge algorithms for single cell Li-Ion or Li-Polymer battery to achieve optimal capacity in the shortest charging time possible. Along with its small physical size, the low number of external components required make the MCP73811/2 ideally suited for portable applications. For applications charging from a USB port, the MCP73811 adheres to all the specifications governing the USB power bus. Applications * Low-Cost Lithium-Ion/Lithium-Polymer Battery Chargers * Rechargeable Toys * Electronic Cigarettes * Bluetooth Headsets * USB Chargers (c) 2007 Microchip Technology Inc. The MCP73811/2 employ a constant current/constant voltage charge algorithm. The constant voltage regulation is fixed at 4.20V, with a tight regulation tolerance of 1%. For the MCP73811, the constant current value is selected as 85 mA (low power USB port) or 450 mA (high power USB port) with a digital input signal on the PROG input. For the MCP73812, the constant current value is set with one external resistor. The MCP73811/2 limit the charge current based on die temperature during high power or high ambient conditions. This thermal regulation optimizes the charge cycle time while maintaining device reliability. The MCP73811/2 are fully specified over the ambient temperature range of -40C to +85C. The MCP73811/2 are available in a 5-Lead, SOT-23 package. Package Types 5-Pin SOT-23 CE 1 VSS 2 VBAT 3 5 PROG 4 VDD DS22036B-page 1 MCP73811/2 Typical Applications 450 mA Li-Ion Battery Charger VIN 1 F 4 5 1 VBAT 3 1 F VDD 500 mA Li-Ion Battery Charger 4 V DD VIN 1 F + Single Li-Ion - Cell PROG PROG VSS 2 CE VBAT 3 1 F 1 CE MCP73811 + Single Li-Ion - Cell 5 VSS 2 2 k MCP73812 Functional Block Diagram Direction Control VDD VBAT 6A G=0.001 MCP73812 MCP73811 + CA - 2.7 k PROG 12 k 388.7 k + Reference Generator VA 111 k Direction Control VREF (1.21V) 157.3 k + VBAT CE VSS DS22036B-page 2 - 528.6 k Charge Enable + - (c) 2007 Microchip Technology Inc. MCP73811/2 1.0 ELECTRICAL CHARACTERISTICS Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings VDDN ................................................................................7.0V All Inputs and Outputs w.r.t. VSS ............... -0.3 to (VDD+0.3)V Maximum Junction Temperature, TJ ............ Internally Limited Storage temperature .....................................-65C to +150C ESD protection on all pins Human Body Model (1.5 kW in Series with 100 pF) ...... 4 kV Machine Model (200pF, No Series Resistance) ..............400V DC CHARACTERISTICS Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typ.) + 0.3V] to 6V, TA = -40C to +85C. Typical values are at +25C, VDD = [VREG (typ.) + 1.0V] Parameters Sym Min Typ Max Units Conditions Supply Voltage VDD 3.75 -- 6 V Supply Current ISS -- 1000 1500 A Charging -- 50 100 A Standby (CE = VSS) -- 1.2 5 A Shutdown (VDD < VBAT - 100 mV) -- 4.20 -- V VDD=[VREG(Typ)+1V] IOUT=10 mA TA=-5C to +55C Supply Input Voltage Regulation (Constant Voltage Mode) Regulated Output Voltage VREG VRTOL -1 -- +1 % Line Regulation |(VBAT/VBAT) /VDD| -- 0.09 0.30 %/V Load Regulation |VBAT/VBAT| -- 0.09 0.30 % IOUT=10 mA to 50 mA VDD=[VREG(Typ)+1V] PSRR -- 52 -- dB IOUT=10 mA, 10 Hz to 1 kHz -- 47 -- dB IOUT=10 mA, 10 Hz to 10 kHz -- 22 -- dB IOUT=10 mA, 10 Hz to 1 MHz Output Voltage Tolerance Supply Ripple Attenuation VDD=[VREG(Typ)+1V] to 6V IOUT=10 mA Current Regulation (Fast Charge Constant-Current Mode) -- 85 -- mA MCP73811 - PROG = Low -- 450 -- mA MCP73811 - PROG = High -- 50 -- mA MCP73812 - PROG = 20 k -- 100 -- mA MCP73812 - PROG = 10 k -- 500 -- mA IRTOL -10 -- +10 % RDSON -- 400 -- m VDD = 3.75V, TJ = 105C -- 0.5 2 A Shutdown (VDD < VBAT - 100 mV) Fast Charge Current IREG Regulation Charge Current Tolerance MCP73812 - PROG = 2 k TA=-5C to +55C Pass Transistor ON-Resistance ON-Resistance Battery Discharge Current Output Reverse Leakage IDISCHARGE Current (c) 2007 Microchip Technology Inc. DS22036B-page 3 MCP73811/2 DC CHARACTERISTICS (Continued) Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(typ.) + 0.3V] to 6V, TA = -40C to +85C. Typical values are at +25C, VDD = [VREG (typ.) + 1.0V] Parameters Sym Min Typ Max Units Conditions Charge Enable (CE), PROG Input - MCP73811 Input High Voltage Level VIH 2 -- -- V Input Low Voltage Level VIL -- -- 0.8 V Input Leakage Current ILK -- 0.01 1 A VCE = VDD, VPROG = VDD RPROG 2 -- 20 k MCP73812 PROG Input - MCP73812 Charge Impedance Range Automatic Power Down (Direction Control) Automatic Power Down Entry Threshold VPD VBAT + 10 mV VBAT + 50 mV -- V 2.3V < VBAT < VREG VDD Falling Automatic Power Down Exit Threshold VPDEXIT -- VBAT + 150 mV VBAT + 250 mV V 2.3V < VBAT < VREG VDD Rising Die Temperature TSD -- 150 -- C Die Temperature TSDHYS -- 10 -- C Thermal Shutdown Hysteresis TEMPERATURE SPECIFICATIONS Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG (typ.) + 0.3V] to 6V. Typical values are at +25C, VDD = [VREG (typ.) + 1.0V] Parameters Sym Min Typ Max Units Specified Temperature Range TA -40 -- +85 C Operating Temperature Range TJ -40 -- +125 C Storage Temperature Range TA -65 -- +150 C JA -- 230 -- C/W Conditions Temperature Ranges Thermal Package Resistances Thermal Resistance, 5-Lead, SOT-23 DS22036B-page 4 4-Layer JC51-7 Standard Board, Natural Convection (c) 2007 Microchip Technology Inc. MCP73811/2 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 4.210 4.205 Charge Current (mA) Battery Regulation Voltage (V) Note: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25C, Constant-voltage mode. IOUT = 10 mA 4.200 4.195 4.190 IOUT = 100 mA 4.185 IOUT = 450 mA 4.180 4.175 4.170 4.50 4.75 5.00 5.25 5.50 5.75 6.00 90 89 88 87 86 85 84 83 82 81 80 PROG = Low Temp = +25C 4.5 4.75 455 Charge Current (mA) 460 4.205 IOUT = 10 mA 4.195 4.190 IOUT = 100 mA 4.180 4.175 IOUT = 450 mA 445 440 435 430 4.5 Charge Current (mA) Output Leakage Current (A) 4.00 4.20 Battery Regulation Voltage (V) FIGURE 2-3: Output Leakage Current (IDISCHARGE) vs. Battery Regulation Voltage (VBAT). (c) 2007 Microchip Technology Inc. 4.75 5 5.25 5.5 5.75 6 FIGURE 2-5: Charge Current (IOUT) vs. Supply Voltage (VDD) - MCP73811. 100 3.80 PROG = High Temp = 25C Supply Voltage (V) FIGURE 2-2: Battery Regulation Voltage (VBAT) vs. Ambient Temperature (TA). 3.60 6 450 Ambient Temperature (C) 3.40 5.75 425 80 70 60 50 40 30 20 0 10 -10 -20 -30 4.170 0.40 0.35 +85C 0.30 -40C 0.25 0.20 +25C 0.15 0.10 0.05 0.00 3.00 3.20 5.5 FIGURE 2-4: Charge Current (IOUT) vs. Supply Voltage (VDD) - MCP73811. 4.210 -40 Battery Regulation Voltage (V) FIGURE 2-1: Battery Regulation Voltage (VBAT) vs. Supply Voltage (VDD). 4.185 5.25 Supply Voltage (V) Supply Voltage (V) 4.200 5 95 PROG = Low VDD = 5V 90 85 80 75 70 65 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 Ambient Temperature (C) FIGURE 2-6: Charge Current (IOUT) vs. Ambient Temperature (TA) - MCP73811. DS22036B-page 5 MCP73811/2 Typical Performance Curves (Continued) Note: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25C, Constant-voltage mode. 516 PROG = High VDD = 5V 470 Charge Current (mA) 460 450 440 430 420 410 RPROG = 2 k 514 512 510 508 506 504 502 500 4.50 400 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 4.75 5.00 5.50 5.75 6.00 FIGURE 2-10: Charge Current (IOUT) vs. Supply Voltage (VDD) - MCP73812. 104 550 500 450 400 350 300 250 200 150 100 50 0 Charge Current (mA) RPROG = 10 k 103 102 101 100 99 98 97 Programming Resistor (k) 516 Charge Current (mA) 102 101 100 99 98 97 80 RPROG = 2 k 514 512 510 508 506 504 502 Supply Voltage (V) FIGURE 2-9: Charge Current (IOUT) vs. Supply Voltage (VDD) - MCP73812. DS22036B-page 6 80 70 60 50 40 30 6.00 20 5.75 10 5.50 -10 5.25 -20 5.00 -30 500 4.75 -40 96 4.50 FIGURE 2-11: Charge Current (IOUT) vs. Ambient Temperature (TA) - MCP73812. RPROG = 10 k 103 70 Ambient Temperature (C) FIGURE 2-8: Charge Current (IOUT) vs. Programming Resistor (RPROG) - MCP73812. 104 60 20 50 18 40 16 30 14 20 12 0 10 10 8 -10 6 -20 4 -30 96 2 -40 Charge Current (mA) FIGURE 2-7: Charge Current (IOUT) vs. Ambient Temperature (TA) - MCP73811. Charge Current (mA) 5.25 Supply Voltage (V) Ambient Temperature (C) 0 Charge Current (mA) 480 Ambient Temperature (C) FIGURE 2-12: Charge Current (IOUT) vs. Ambient Temperature (TA) - MCP73812. (c) 2007 Microchip Technology Inc. MCP73811/2 Typical Performance Curves (Continued) Note: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25C, Constant-voltage mode. 0 RPROG = 10 k -10 90 75 60 45 30 15 -30 -40 -50 -60 0.01 155 145 135 0.1 -0.05 6 -0.10 4 -0.15 2 0 -50 80 0.10 12 0.05 10 0.00 8 -0.05 6 -0.10 4 -0.15 2 0 (c) 2007 Microchip Technology Inc. 100 -0.25 -0.30 Time (s) Frequency (kHz) FIGURE 2-15: Power Supply Ripple Rejection (PSRR). 80 1000 60 100 40 0 10 20 -2 1 -0.20 IOUT = 100 mA COUT = 4.7 F, X7R Ceramic Output Ripple (V) -40 14 200 -30 0.1 -0.30 Line Transient Response. 180 Source Voltage (V) Attenuation (dB) VAC = 100 mVp-p IOUT = 10 mA COUT = 4.7 F, X7R Ceramic FIGURE 2-17: 160 FIGURE 2-14: Charge Current (IOUT) vs. Junction Temperature (TJ) - MCP73812. -60 0.01 -0.25 Time (s) Junction Temperature (C) -20 100 60 40 0 20 -2 155 145 135 125 115 105 95 85 75 65 55 45 35 25 0 -0.20 IOUT = 10 mA COUT = 4.7 F, X7R Ceramic Output Ripple (V) 75 0.00 8 200 150 0.05 10 180 225 0.10 12 160 300 -10 1000 14 140 Source Voltage (V) Charge Current (mA) 375 0 100 FIGURE 2-16: Power Supply Ripple Rejection (PSRR). RPROG = 2 k 450 10 120 FIGURE 2-13: Charge Current (IOUT) vs. Junction Temperature (TJ) - MCP73812. 525 1 Frequency (kHz) Junction Temperature (C) 140 125 115 95 105 85 75 65 55 45 35 25 0 -20 VAC = 100 mVp-p IOUT = 100 mA COUT = 4.7 F, X7R Ceramic 120 105 Attenuation (dB) Charge Current (mA) 120 FIGURE 2-18: Line Transient Response. DS22036B-page 7 MCP73811/2 Typical Performance Curves (Continued) Time (s) 1.40 0.10 1.20 0.05 1.00 0.00 0.80 -0.05 0.60 -0.10 0.40 -0.15 -0.20 COUT = 4.7 F, X7R Ceramic 0.00 0 Time (Minutes) Load Transient Response. 0.20 0.0 FIGURE 2-21: Typical Charge Profile (950 mAh) Li-Ion Battery. Output Ripple (V) Output Current (A) FIGURE 2-19: 100 0 200 180 160 140 120 80 100 60 40 0 -0.12 20 -0.05 200 180 -0.10 300 1.0 165 COUT = 4.7 F, X7R Ceramic 0.00 2.0 150 -0.08 135 -0.06 0.05 120 0.10 90 -0.04 105 0.15 400 MCP73812T-420I/OT VDD = 5.0V RPROG = 2 k 3.0 75 -0.02 60 0.00 0.20 500 4.0 45 0.25 5.0 30 0.02 15 0.04 0.30 Battery Voltage (V) Charge Current (mA) 0.35 Output Ripple (V) Output Current (A) Note: Unless otherwise indicated, VDD = [VREG(typ.) + 1V], IOUT = 10 mA and TA= +25C, Constant-voltage mode. -0.25 200 180 160 140 120 100 80 60 40 20 -0.30 0 -0.20 Time (s) FIGURE 2-20: DS22036B-page 8 Load Transient Response. (c) 2007 Microchip Technology Inc. MCP73811/2 3.0 PIN DESCRIPTION The descriptions of the pins are listed in Table 3-1. TABLE 3-1: Pin Number SOT-23-5 1 3.1 PIN FUNCTION TABLES Symbol Function CE Active High Charge Enable 2 VSS Battery Management 0V Reference 3 VBAT Battery Charge Control Output 4 VDD Battery Management Input Supply 5 PROG Current Regulation Set and Charge Control Enable Charge Enable Input (CE) 3.4 Battery Management Input Supply (VDD) A logic High enables battery charging. A logic Low disables battery charging. The charge enable input is compatible with 1.8V logic. A supply voltage of [VREG (typ.) + 0.3V] to 6V is recommended. Bypass to VSS with a minimum of 1 F. 3.2 3.5 Battery Management 0V Reference (VSS) Connect to negative terminal of battery and input supply. 3.3 Battery Charge Control Output (VBAT) Current Regulation Set (PROG) For the MCP73811, the current regulation set input (PROG) functions as a digital input selection. A logic Low selects a 85 mA charge current; a logic High selects a 450 mA charge current. For the MCP73812, the charge current is set by placing a resistor from PROG to VSS. Connect to positive terminal of battery. Drain terminal of internal P-channel MOSFET pass transistor. Bypass to VSS with a minimum of 1 F to ensure loop stability when the battery is disconnected. (c) 2007 Microchip Technology Inc. DS22036B-page 9 MCP73811/2 4.0 DEVICE OVERVIEW The MCP73811/2 are simple, but fully integrated linear charge management controllers. Figure 4-1 depicts the operational flow algorithm. 4.3 PRECONDITIONING The MCP73811/2 does not support preconditioning of deeply depleted cells. 4.4 SHUTDOWN MODE* VDD < VPD Constant Current MODE - Fast Charge During the constant current mode, the selected (MCP73811) or programmed (MCP73812) charge current is supplied to the battery or load. For the MCP73812, the charge current is established using a single resistor from PROG to VSS. The program resistor and the charge current are calculated using the following equation: STANDBY MODE* CE = Low EQUATION 4-1: CONSTANT CURRENT MODE Charge Current = IREG VBAT < VREG * Continuously Monitored 4.1 Flow Chart. Undervoltage Lockout (UVLO) The MCP73811/2 does not have an internal under voltage lockout (UVLO) circuit. 4.2 Where: VBAT = VREG CONSTANT VOLTAGE MODE Charge Voltage = VREG FIGURE 4-1: 1000V I REG = ----------------R PROG Charge Qualification When the input power is applied, the input supply must rise 150 mV above the battery voltage before the MCP73811/2 becomes operational. The automatic power down circuit places the device in a shutdown mode if the input supply falls to within +50 mV of the battery voltage. The automatic circuit is always active. Whenever the input supply is within +50 mV of the voltage at the VBAT pin, the MCP73811/2 is placed in a shutdown mode. RPROG = kilo-ohms IREG = milliamperes Constant current mode is maintained until the voltage at the VBAT pin reaches the regulation voltage, VREG. 4.5 Constant Voltage Mode When the voltage at the VBAT pin reaches the regulation voltage, VREG, constant voltage regulation begins. The regulation voltage is factory set to 4.20V with a tolerance of 1.0%. 4.6 Charge Termination The charge cycle is terminated by removing the battery from the charger, removing input power, or driving the charge enable input (CE) to a logic Low. An automatic charge termination method is not implemented. 4.7 Automatic Recharge The MCP73811/2 does not support automatic recharge cycles since automatic charge termination has not been implemented. In essence, the MCP73811/2 is always in a charge cycle whenever the qualification parameters have been met. During power down condition, the battery reverse discharge current is less than 2 A. For a charge cycle to begin, the automatic power down conditions must be met and the charge enable input must be above the input high threshold. DS22036B-page 10 (c) 2007 Microchip Technology Inc. MCP73811/2 4.8 Thermal Regulation 4.9 The MCP73811/2 limits the charge current based on the die temperature. The thermal regulation optimizes the charge cycle time while maintaining device reliability. Figure 4-2 depicts the thermal regulation for the MCP73811/2. . Charge Current (mA) 525 Thermal Shutdown The MCP73811/2 suspends charge if the die temperature exceeds 150C. Charging will resume when the die temperature has cooled by approximately 10C. The thermal shutdown is a secondary safety feature in the event that there is a failure within the thermal regulation circuitry. RPROG = 2 k 450 375 300 225 150 75 155 145 135 125 115 95 105 85 75 65 55 45 35 25 0 Junction Temperature (C) FIGURE 4-2: Thermal Regulation. (c) 2007 Microchip Technology Inc. DS22036B-page 11 MCP73811/2 5.0 DETAILED DESCRIPTION 5.2 5.1 Analog Circuitry 5.2.1 5.1.1 BATTERY MANAGEMENT INPUT SUPPLY (VDD) The VDD input is the input supply to the MCP73811/2. The MCP73811/2 automatically enters a Power-down mode if the voltage on the VDD input falls to within +50 mV of the battery voltage. This feature prevents draining the battery pack when the VDD supply is not present. 5.1.2 MCP73812 CURRENT REGULATION SET (PROG) For the MCP73812, the charge current regulation can be scaled by placing a programming resistor (RPROG) from the PROG input to VSS. The program resistor and the charge current are calculated using the following equation: Digital Circuitry CHARGE ENABLE (CE) The charge enable input pin (CE) can be used to terminate a charge at any time during the charge cycle, as well as to initiate a charge cycle or initiate a recharge cycle. Driving the input to a logic High enables the device. Driving the input to a logic Low disables the device and terminates a charge cycle. When disabled, the device's supply current is reduced to 50 A, typically. 5.2.2 MCP73811 CURRENT REGULATION SELECT (PROG) For the MCP73811, driving the PROG input to a logic Low selects the low charge current setting (85 mA). Driving the PROG input to a logic High selects the high charge current setting (450 mA). EQUATION 5-1: 1000VI REG = ---------------R PROG Where: 5.1.3 RPROG = kilo-ohms IREG = milliamperes BATTERY CHARGE CONTROL OUTPUT (VBAT) The battery charge control output is the drain terminal of an internal P-channel MOSFET. The MCP73811/2 provides constant current and voltage regulation to the battery pack by controlling this MOSFET in the linear region. The battery charge control output should be connected to the positive terminal of the battery pack. DS22036B-page 12 (c) 2007 Microchip Technology Inc. MCP73811/2 6.0 APPLICATIONS charge algorithm for Lithium-Ion and Lithium-Polymer cells Constant-current followed by Constant-voltage. Figure 6-1 depicts a typical stand-alone application circuit, while Figures 6-2 depict the accompanying charge profile. The MCP73811/2 is designed to operate in conjunction with a host microcontroller or in stand-alone applications. The MCP73811/2 provides the preferred Li-Ion Battery Charger 4 V DD CIN VBAT PROG 3 COUT 5 REGULATED WALL CUBE 1 CE VSS + Single Li-Ion - Cell 2 RPROG MCP73812 FIGURE 6-1: Typical Application Circuit. 5.0 400 MCP73812T-420I/OT VDD = 5.0V RPROG = 2 k 3.0 2.0 300 200 180 165 150 135 120 90 105 75 60 0 45 0.0 30 100 0 1.0 15 Battery Voltage (V) Charge Current (mA) 500 4.0 Time (Minutes) FIGURE 6-2: Typical Charge Profile (950 mAh Li-Ion Battery). 6.1 Application Circuit Design Due to the low efficiency of linear charging, the most important factors are thermal design and cost, which are a direct function of the input voltage, output current and thermal impedance between the battery charger and the ambient cooling air. The worst-case situation is when the device has transitioned from the Preconditioning mode to the Constant-current mode. In this situation, the battery charger has to dissipate the maximum power. A trade-off must be made between the charge current, cost and thermal requirements of the charger. 6.1.1 COMPONENT SELECTION Selection of the external components in Figure 6-1 is crucial to the integrity and reliability of the charging system. The following discussion is intended as a guide for the component selection process. 6.1.1.1 Charge Current The preferred fast charge current for Lithium-Ion cells is at the 1C rate, with an absolute maximum current at the 2C rate. For example, a 500 mAh battery pack has a preferred fast charge current of 500 mA. Charging at this rate provides the shortest charge cycle times without degradation to the battery pack performance or life. (c) 2007 Microchip Technology Inc. DS22036B-page 13 MCP73811/2 6.1.1.2 Thermal Considerations 6.1.1.4 Reverse-Blocking Protection The worst-case power dissipation in the battery charger occurs when the input voltage is at the maximum and the device has transitioned from the Preconditioning mode to the Constant-current mode. In this case, the power dissipation is: The MCP73811/2 provides protection from a faulted or shorted input. Without the protection, a faulted or shorted input would discharge the battery pack through the body diode of the internal pass transistor. EQUATION 6-1: The charge enable input pin (CE) can be used to terminate a charge at any time during the charge cycle, as well as to initiate a charge cycle or initiate a recharge cycle. PowerDissipation = ( V DDMAX -V PTHMIN )xI REGMAX Where: VDDMAX = the maximum input voltage IREGMAX = the maximum fast charge current VPTHMIN = the minimum transition threshold voltage 6.1.1.5 Driving the input to a logic High enables the device. Driving the input to a logic Low disables the device and terminates a charge cycle. When disabled, the device's supply current is reduced to 50 A, typically. 6.2 Power dissipation with a 5V, 10% input voltage source is: EQUATION 6-2: PowerDissipation = ( 5.5V - 2.7V ) x 500 mA = 1.4 W This power dissipation with the battery charger in the SOT-23-5 package will cause thermal regulation to be entered as depicted in Figure 6-3. 6.1.1.3 Charge Inhibit PCB Layout Issues For optimum voltage regulation, place the battery pack as close as possible to the device's VBAT and VSS pins, recommended to minimize voltage drops along the high current-carrying PCB traces. If the PCB layout is used as a heatsink, adding many vias in the heatsink pad can help conduct more heat to the backplane of the PCB, thus reducing the maximum junction temperature. Figures 6-3 and 6-4 depict a typical layout with PCB heatsinking. External Capacitors The MCP73811/2 is stable with or without a battery load. In order to maintain good AC stability in the Constant-voltage mode, a minimum capacitance of 1 F is recommended to bypass the VBAT pin to VSS. This capacitance provides compensation when there is no battery load. In addition, the battery and interconnections appear inductive at high frequencies. These elements are in the control feedback loop during Constant-voltage mode. Therefore, the bypass capacitance may be necessary to compensate for the inductive nature of the battery pack. Virtually any good quality output filter capacitor can be used, independent of the capacitor's minimum Effective Series Resistance (ESR) value. The actual value of the capacitor (and its associated ESR) depends on the output load current. A 1 F ceramic, tantalum or aluminum electrolytic capacitor at the output is usually sufficient to ensure stability for output currents up to a 500 mA. RPROG VSS VBAT CIN VDD MCP73812 FIGURE 6-3: Typical Layout (Top). VSS VBAT FIGURE 6-4: DS22036B-page 14 COUT VDD Typical Layout (Bottom). (c) 2007 Microchip Technology Inc. MCP73811/2 7.0 PACKAGE INFORMATION 7.1 Package Marking Information 5-Pin SOT-23 Example: Standard * XXNN Part Number MCP73811T-420I/OT MCP73812T-420I/OT 1 KSNN Code KSNN KWNN 1 * Custom output voltages available upon request. Contact your local Microchip sales office for more information. Legend: XX...X Y YY WW NNN e3 * Note: Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. (c) 2007 Microchip Technology Inc. DS22036B-page 15 MCP73811/2 5-Lead Plastic Small Outline Transistor (OT) [SOT-23] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging b N E E1 3 2 1 e e1 D A2 A c A1 L L1 Units Dimension Limits Number of Pins MILLIMETERS MIN NOM MAX N 5 Lead Pitch e 0.95 BSC Outside Lead Pitch e1 Overall Height A 0.90 - Molded Package Thickness A2 0.89 - 1.30 Standoff A1 0.00 - 0.15 Overall Width E 2.20 - 3.20 Molded Package Width E1 1.30 - 1.80 Overall Length D 2.70 - 3.10 1.90 BSC 1.45 Foot Length L 0.10 - 0.60 Footprint L1 0.35 - 0.80 Foot Angle 0 - 30 Lead Thickness c 0.08 - 0.26 Lead Width b 0.20 - 0.51 Notes: 1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side. 2. Dimensioning and tolerancing per ASME Y14.5M. BSC: Basic Dimension. Theoretically exact value shown without tolerances. Microchip Technology Drawing C04-091B DS22036B-page 16 (c) 2007 Microchip Technology Inc. MCP73811/2 APPENDIX A: REVISION HISTORY Revision B (September 2007) The following is the list of modifications: 1. 2. 3. 4. 5. 6. 7. Modified "No End-of-Charge Control" bullet to read "External End-of-Charge Control". Deleted No Undervoltage Lockout (UVLO) bullet Replaced Figure 2-21 with new plot and changed figure caption. Deleted Figure 2-22. Replaced Figure 6-2 with new plot and changed figure caption. Deleted Figure 6-3. Updated revision history. Revision A (March 2007) * Original Release of this Document. (c) 2007 Microchip Technology Inc. DS22036B-page 17 MCP73811/2 NOTES: DS22036B-page 18 (c) 2007 Microchip Technology Inc. MCP73811/2 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. -- XXX Device Device: Voltage Options *: X /XX Voltage Temperature Package Options MCP73811T: Li-Ion Charger w/Selectable Charge Current, Tape and Reel MCP73812T: Li-Ion Charger w/Selectable Charge Current, Tape and Reel Examples: a) MCP73811T-420I/OT: 4.2V Charger SOT-23-5 pkg. a) MCP73812T-420I/OT: 4.2V Charger SOT-23-5 pkg. 420 = 4.2V "Standard" *Contact factory for other output voltage options. Temperature: I = -40C to +85C Package Type: OT = Small Outline Transistor (SOT-23), 5-lead (c) 2007 Microchip Technology Inc. DS22036B-page 19 MCP73811/2 NOTES: DS22036B-page 20 (c) 2007 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * Microchip products meet the specification contained in their particular Microchip Data Sheet. * Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. * There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. * Microchip is willing to work with the customer who is concerned about the integrity of their code. * Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer's risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, Accuron, dsPIC, KEELOQ, KEELOQ logo, microID, MPLAB, PIC, PICmicro, PICSTART, PRO MATE, rfPIC and SmartShunt are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. AmpLab, FilterLab, Linear Active Thermistor, Migratable Memory, MXDEV, MXLAB, SEEVAL, SmartSensor and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit, PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Smart Serial, SmartTel, Total Endurance, UNI/O, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2007, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company's quality system processes and procedures are for its PIC(R) MCUs and dsPIC(R) DSCs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified. (c) 2007 Microchip Technology Inc. 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