© by SEMIKRON 0898 B 3 – 49
VRSM VRRM (dv/dt)cr ITRMS (maximum values for continuous operation)
VDRM 2300 A 2800 A
ITAV (sin. 180; Tcase = . . .; DSC)
VVV/
µs 1465 A (58 °C) 1780 A (55 °C)
500
900
1300
1500
1700
1900
2300
2700
2900
400
800
1200
1400
1600
1800
2200
2600
2800
500
500
1000
1000
1000
1000
1000
1000
1000
SKT 1000/04 D
SKT 1000/08 D
SKT 1000/12 E
SKT 1000/14 E
SKT 1000/16 E
SKT 1000/18 E
SKT 1000/22 E L2
SKT 1000/26 E L2
SKT 1000/28 E L2
SKT 1200/04 D
–
SKT 1200/12 E
SKT 1200/14 E
SKT 1200/16 E
SKT 1200/18 E
–
–
–
Symbol Conditions SKT 1000 SKT 1200 Units
ITAV sin. 180; Tcase = 85 °C; DSC 1000 1200 A
ITSM
i2t
Tvj = 25 °C; 10 ms
Tvj = 125 °C; 10 ms
Tvj = 25 °C; 8,3 ... 10 ms
Tvj = 125 °C; 8,3 ... 10 ms
19 000
16 500
1 800
1 360
30 000
25 500
4 500
3 250
A
A
kA2s
kA2s
tgd
tgr
Tvj = 25 °C IG = 1 A
diG/dt = 1 A/µs
VD = 0,67 . VDRM
typ. 1
typ. 2 µs
µs
(di/dt)cr
IH
IL
tq
f = 50 ... 60 Hz
Tvj = 25 °C; typ./max.
Tvj = 25 °C; RG = 33 Ω; typ./max.
Tvj = 125 °C; typ.
125
250 / 500
0,5 / 2
100 ... 250
A/µs
mA
A
µs
VT
VT(TO)
rT
Tvj = 25 °C; IT = 3600 A; max.
Tvj = 125 °C
Tvj = 125 °C
2,0
1,14
0,243
1,65
0,95
0,18
V
V
mΩ
IDD; IRD Tvj = 125 °C; VRD = VRRM
VDD = VDRM 100 mA
VGT
IGT
VGD
IGD
Tvj = 25 °C
Tvj = 25 °C
Tvj = 125 °C
Tvj = 125 °C
5
250
0,25
10
V
mA
V
mA
Rthjc
Rthch
Tvj
Tstg
cont.;
sin. 180; DSC/SSC
rec. 120; DSC/SSC
DSC/SSC
0,021
0,0225 / 0,054
0,027 / 0,060
0,005 / 0,010
– 40 ... + 125
– 40 ... + 130
°C/W
°C/W
°C/W
°C/W
°C
°C
F
w
SI units
US units 22 ... 25
5000 ... 5600
550
kN
lbs.
g
Case B 14
Thyristors
SKT 1000
SKT 1200
Features
•Hermetic metal cases with
ceramic insulators
•Capsule packages for double
sided cooling
•International standard cases
•Off-state and reverse voltages
up to 2800 V
•Amplifying gate
Typical Applications
•DC motor control
(e. g. for machine tools)
•Controlled rectifiers
(e. g. for battery charging)
•AC controllers
(e. g. for temperature control)
© by SEMIKRONB 3 – 50
© by SEMIKRON B 3 – 51
© by SEMIKRONB 3 – 52
Fig. 7 b Power dissipation vs. on-state current Fig. 8 Surge overload current vs. time
Fig. 6 b On-state characteristics Fig. 7 a Power dissipation vs. on-st ate current
Fig. 9 Gate trigger char act eristics
© by SEMIKRON B 3 – 53
