BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 5 – 2
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PNP MEDIUM POWER TRANSISTORS IN SOT223
Features
BVCEO > -45V, -60V & -80V
I
C = -1A High Continuous Collector Current
I
CM = -2A Peak Pulse Current
2W Power Dissipation
Low Saturation Voltage VCE(sat) < -500mV @ -0.5A
Gain Groups 10 and 16
Complementary NPN types: BCP54, 55 and 56
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (approximate)
Applications
Medium Power Switching or Amplification Applications
AF Driver and Output Stages
Ordering Information (Notes 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
BCP51TA AEC-Q101 BCP 51 7 12 1,000
BCP5110TA AEC-Q101 BCP 5110 7 12 1,000
BCP5116TA AEC-Q101 BCP 5116 7 12 1,000
BCP5116TC AEC-Q101 BCP 5116 13 12 4,000
BCP52TA AEC-Q101 BCP 52 7 12 1,000
BCP5210TA AEC-Q101 BCP 5210 7 12 1,000
BCP5216TA AEC-Q101 BCP 5216 7 12 1,000
BCP53TA AEC-Q101 BCP 53 7 12 1,000
BCP53QTA Automotive BCP 53 7 12 1,000
BCP5310TA AEC-Q101 BCP 5310 7 12 1,000
BCP5316TA AEC-Q101 BCP 5316 7 12 1,000
BCP5316TC AEC-Q101 BCP 5316 13 12 4,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
BCP = Product Type Marking Code, Line 1.
xxxx = Product Type Marking Code, Line 2 as follows:
BCP51 = 51 BCP52 = 52 BCP53 = 53
BCP5110 = 5110 BCP5210 = 5210 BCP5310 = 5310
BCP5116 = 5116 BCP5216 = 5216 BCP5316 = 5316
Top View Device Symbol
SOT223
C
E
B
xxxx
BCP
Top View
Pin-Out
BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 5 – 2
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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol BCP51 BCP52 BCP53 Unit
Collector-Base Voltage VCBO -45 -60 -100 V
Collector-Emitter Voltage VCEO -45 -60 -80 V
Emitter-Base Voltage VEBO -5 V
Continuous Collector Current IC -1 A
Peak Pulse Collector Current ICM -2
Continuous Base Current IB -100 mA
Peak Pulse Base Current IBM -200
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6) PD 2 W
Thermal Resistance, Junction to Ambient (Note 6) RθJA 62 C/W
Thermal Resistance, Junction to Leads (Note 7) RθJL 19.4 C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 C
ESD Ratings (Note 8)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For a device mounted with the collector lead on 50mm x 50mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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Datasheet Number: DS35366 Rev. 5 – 2
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Thermal Characteristics and Derating Information
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
100
120
140
160
0 20406080100120140160
0.0
0.5
1.0
1.5
2.0 50mm x 50mm
1oz Cu
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60 50mm x 50mm 1oz Cu
Tamb = 25°C
Pulse Power Dissipation
Pulse Width (s)
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
50mm x 50mm 1oz Cu
Tamb = 25°C
Single pulse
Maximum Power (W)
BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 5 – 2
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base
Breakdown Voltage
BCP51
BVCBO
-45
— — V
IC = -100µA
BCP52 -60
BCP53 -100
Collector-Emitter
Breakdown Voltage (Note 9)
BCP51
BVCEO
-45
— — V
IC = -10mA
BCP52 -60
BCP53 -80
Emitter-Base Breakdown Voltage BVEBO -5 — — V
IE = -10µA
Collector Cut-off Current ICBO — —
-0.1
-20 μA VCB = -30V
VCB = -30V, TA = +150°C
Emitter Cut-off Current IEBO — —
-20 nA
VEB = -4V
Static Forward Current Transfer Ratio (Note 9)
All versions
hFE
25
40
25
—
—
—
—
250
— —
IC = -5mA, VCE = -2V
IC = -150mA, VCE = -2V
IC = -500mA, VCE = -2V
10 gain grp 63 — 160 IC = -150mA, VCE = -2V
16 gain grp 100 — 250 IC = -150mA, VCE = -2V
Collector-Emitter Saturation Voltage (Note 9) VCE
(
sat
)
— —
-0.5 V
IC = -500mA, IB = -50mA
Base-Emitter Turn-On Voltage (Note 9) VBE
(
on
)
— —
-1.0 V
IC = -500mA, VCE = -2V
Transition Frequency fT 150 — — MHz
IC = -50mA, VCE = -10V
f = 100MHz
Output Capacitance Cobo — —
25 pF
VCB = -10V, f = 1MHz
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
0
0.2
0.4
0.6
0.8
1.0
01 2 34 5
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I,
C
O
LLE
C
T
O
R
C
U
R
R
EN
T
(A)
C
I = 2mA
B
I = 4mA
B
I = 6mA
B
I = 8mA
B
I = 10mA
B
Fig. 1 Typical Collector Current
vs. Collector-Emitter Voltage
0
100
200
300
400
500
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
Fig. 2 Typical DC Current Gain vs. Collector Current
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = -5V
CE
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Datasheet Number: DS35366 Rev. 5 – 2
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BCP 51/ 52/ 53
0
0.2
0.4
0.6
0.8
1.0
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT(A)
C
-V , B
A
SE-E
M
I
T
T
E
R
T
U
R
N
-
O
N
V
O
L
T
A
G
E (V)
BE(ON)
Fig 3 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = -2V
CE
0
0.1
0.2
0.3
0.4
0.5
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
-V ,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
0
0.2
0.4
0.6
0.8
1.0
1.2
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
-V , BASE-EMI
T
T
E
R
SA
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E (V)
BE(SAT)
Fig. 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
I / I = 10
CB
0
50
100
150
200
250
300
020406080100
-I , COLLECTOR CURRENT (mA)
C
f,
G
AI
N
-BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current
V = -5V
CE
f = 100MHz
0
20
40
60
80
100
120
140
160
010203040
V , REVERSE VOLTAGE (V)
R
CAPACITANCE(pF)
Fig. 7 Typical Capacitance Characteristics
C
obo
C
ibo
f = 1MHz
BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 5 – 2
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A1A
7°
7°
D
b
e
e1
b1
C
E1
L
0°-10°
Q
E
0.25
Seating
Plane
Gauge
Plane
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT223
Dim Min Max Typ
A 1.55 1.65 1.60
A1 0.010 0.15 0.05
b 0.60 0.80 0.70
b1 2.90 3.10 3.00
C 0.20 0.30 0.25
D 6.45 6.55 6.50
E 3.45 3.55 3.50
E1 6.90 7.10 7.00
e - - 4.60
e1 - - 2.30
L 0.85 1.05 0.95
Q 0.84 0.94 0.89
All Dimensions in mm
Dimensions Value (in mm)
X1 3.3
X2 1.2
Y1 1.6
Y2 1.6
C1 6.4
C2 2.3
X2
C1
C2
X1
Y2
Y1
BCP 51 / 52 / 53
Datasheet Number: DS35366 Rev. 5 – 2
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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