TPC816A C9G - TAIWAN SEMICONDUCTOR MANUFACTURING

TPC816 SERIES

Taiwan Semiconductor

1 Version:B1612

200mW, 4 PIN DIP Phototransistor Photocoupler

FEATURES

● Current transfer ratio

(CTR: MIN.80% at IF=5mA, VCE=5V)

● High isolation voltage between input and output

(Viso=5000V rms)

● High collector-emitter voltage (VCEO:70V)

● Compliant to RoHS directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

APPLICATIONS

● Programmable controllers

● System appliances, measuring instruments

● Signal transmission between circuits of different potentials

and impedances

MECHANICAL DATA

● Case: DIP-4 , DIP-4M , SOP-4

● Molding compound: UL flammability classification

rating 94V-0

● Moisture sensitivity level: level 1, per J-STD-020

● Packing code with suffix "G" means green compound

(halogen-free)

● Terminal: Matte tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 1A whisker test

● Polarity: Indicated by cathode band

KEY PARAMETERS

PARAMETER

VALUE

UNIT

CTR

80-600

%

VCEO

70

V

Ptot

200

mW

IC

50

mA

Viso

5000

Vrms

Package

DIP-4

DIP-4M

SOP-4

Configuration

Single Dice

TPC816 SERIES

Taiwan Semiconductor

2 Version:B1612

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

PARAMETER

SYMBOL

PART NUMBER

UNIT

Input

Forward current

IF

50

mA

Peak forward current (Note 1)

IFM

1

A

Reverse voltage

VR

6

V

Power dissipation

P

70

mW

Output

Collector-emitter voltage

VCEO

70

V

Emitter-collector voltage

VECO

6

V

Collector current

IC

50

mA

Collector power dissipation

PC

150

mW

Total power dissipation

Ptot

200

mW

Isolation voltage (Note 2)

Viso

5000

Vrms

Operating temperature

Topr

-30 to +100

°C

Storage temperature

Tstg

-55 to +125

°C

Soldering temperature (Note 3)

Tsol

260

°C

Notes:

1. Pulse width≦100ms，Duty ratio：0.001

2. 40 to 60% RH，AC for 1 minute

3. For 10s

ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

MIN

TYP

MAX

UNIT

Input

Forward voltage

IF=20mA

VF

1.2

1.4

V

Peak forward voltage

IFM=0.5A

VFM

3.0

V

Reverse current

VR=4V

IR

10

μA

Terminal capacitance

V=0, f=1kHz

Ct

30

250

pF

Output

Collector dark current

VCE=20V,IF=0

ICEO

10-7

A

Transfer

Characteristics

Current transfer ration

(Note 1)

IF=5mA, VCE=5V

CTR

80

600

%

Collector-emitter

saturation voltage

IF=20mA, IC=1mA

VCE(sat)

0.1

0.2

V

Isolation resistance

DC500V,

40 to 60%RH

RISO

5x1010

1011

Ω

Floating capacitance

V=0, f=1MHz

Cf

0.6

1.0

pF

Cut-off frequency

VCE=5V, IC=2mA,

RL=100Ω, -3dB

fc

80

KHz

Response

time

Rise time

VCE=2V, IC=2mA,

RL=100Ω

tr

4

18

μs

Fall time

tf

3

18

μs

Notes:

1. Classification table of current transfer ratio is shown below

TPC816 SERIES

Taiwan Semiconductor

3 Version:B1612

RANK TABLE OF CURRENT TRANSFER RATIO, CTR

RANK MARK

MIN (%)

MAX (%)

A

80

160

B

130

260

C

200

400

D

300

600

ORDERING INFORMATION

PART NO.

(Note 1&2)

PACKING

CODE

PACKING CODE

SUFFIX

PACKAGE

PACKING

TPC816x

C9

G

DIP-4

100 / TUBE

TPC816Mx

C9

DIP-4M

(Leads with 0.4" spacing)

100 / TUBE

TPC816S1x

RA

SOP-4

2K / 13" Reel

Notes:

1. “x” defines CTR rank from “A” to “D”

2. Whole series with green compound

EXAMPLE

EXAMPLE P/N

PART NO.

PACKING CODE

SUFFIX

DESCRIPTION

TPC816A C9G

TPC816A

C9

G

Green compound

TPC816 SERIES

Taiwan Semiconductor

4 Version:B1612

CHARACTERISTICS CURVES

(TA = 25°C unless otherwise noted)

Fig. 1 Forward Current vs.

Ambient Temperature

Fig.2 Collector Power Dissipation vs.

Ambient Temperature

Fig.3 Peak Forward Current vs.

Duty Ratio

Fig.4 Forward Current vs.

Forward Voltage

0

10

20

30

40

50

60

-30 -15 015 30 45 60 75 90 105 120

0

50

100

150

200

-30 -15 015 30 45 60 75 90 105 120

1

10

100

1000

10000

0.0001 0.001 0.01 0.1 1

0.01

0.1

1

10

100

1000

0 0.5 1 1.5 2 2.5 3 3.5

-25°C

0°C

25°C

50°C

75°C

Collector Power Dissipation, Pc (mW)

Ambient Temperature, Ta (°C)

Peak Forward Current IFM (mA)

Duty Ratio

Forward Current IF(mA)

Forward Voltage VF (V)

Ambient Temperature, Ta (°C)

IF, Instantaneous Forward Current (mA)

TPC816 SERIES

Taiwan Semiconductor

5 Version:B1612

CHARACTERISTICS CURVES

(TA = 25°C unless otherwise noted)

Fig. 5 Current Transfer Ratio vs.

Forward Current

Fig.6 Collector Current vs.

Collector-Emitter Voltage

Fig.7 Relative Current Transfer Ratio vs.

Ambient Temperature

Fig.8 Collector-emitter Saturation Voltage vs

Ambient Temperature

0

20

40

60

80

100

120

140

160

180

200

110 100

VCE=5V

0

10

20

30

40

50

60

0 1 2 3 4 5 6 7 8 9

5mA

10mA

15mA

20mA

25mA

IF=30mA

0

50

100

150

-30 030 60 90 120

IF=5mA

V

CE

=5V

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

-30 030 60 90 120

IF=20mA

IC=1mA

Collector Current Ic(mA)

Forward Current IF(mA)

Ambient Temperature Ta(°C)

Collector-Emitter Saturation

Voltage VCE(sat) (A)

Ambient Temperature Ta(°C)

Collector-Emitter Voltage VCE(V)

Current Transfer Ratio (%)

Relative Current Transfer Ratio (%)

TPC816 SERIES

Taiwan Semiconductor

6 Version:B1612

CHARACTERISTICS CURVES

(TA = 25°C unless otherwise noted)

Fig. 9 Collector Dark Current vs.

Ambient Temperature

Fig.10 Response Time vs.

Load Resistance

Fig.11 Frequency Response

Fig.12 Collector-Emitter Saturation Voltage vs

Forward Current

1.E-10

1.E-09

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

-30 030 60 90

VCE=20V

0.1

1

10

100

1000

0.01 0.1 1 10 100

ts

td

tf

tr

IC=2mA

VCE=2V

-24

-22

-20

-18

-16

-14

-12

-10

-8

-6

-4

-2

0

2

4

0.1 1 10 100 1000

RL=10kΩ 1kΩ

100Ω

IC=2mA

VCE=5V

0

1

2

3

4

5

6

0 2 4 6 8 10 12 14 16 18 20

IF=20mA

IC=1mA

IC=0.5mA

1mA

3mA

5mA

7mA

Response Time (μs)

Ambient Temperature Ta(°C)

Voltage Gain Av(dB)

Frequency f(kHz)

Collector-Emitter Saturation Voltage VCE(sat)

Forward Current IF(mA)

Load Resistance RL(kΩ)

Collector Dark Current ICEO(A)

TPC816 SERIES

Taiwan Semiconductor

7 Version:B1612

TEST CIRCUIT RESPONSE TIME

TEST CIRCUIT FOR FREQUENCY RESPONSE

TPC816 SERIES

Taiwan Semiconductor

8 Version:B1612

PACKAGE OUTLINE DIMENSION

DIP-4

DIM.

Unit(mm)

Min

Max

A

6.40

6.60

B

4.50

4.70

C

7.90

8.30

D

3.28

3.68

E

2∘

8∘

F

1.25 typ.

H

2.70

2.90

J

0.23

0.26

K

8.86

9.31

L

0.50 typ.

M

2.44

2.64

N

0.40 typ.

DIP-4M (Leads with 0.4" spacing)

DIM.

Unit(mm)

Min

Max

A

6.40

6.60

B

4.50

4.70

C

7.90

8.30

D

3.28

3.68

F

1.25 typ.

G

0.40 typ.

J

0.23

0.26

K

9.86

10.46

L

0.50 typ.

M

2.44

2.64

N

2.40

2.90

TPC816 SERIES

Taiwan Semiconductor

9 Version:B1612

PACKAGE OUTLINE DIMENSION

MARKING

DIM.

Unit(mm)

Min

Max

A

6.40

6.60

B

4.50

4.70

C

7.90

8.30

D

3.28

3.68

F

1.25 typ.

G

0.40 typ.

H

0.00

0.20

J

0.90

1.20

K

9.80

10.30

L

1.25 typ.

M

2.49

2.69

SOP-4

Notes：

816: Product type

B: CTR rank mark

YWW: Date code

TPC816 SERIES

Taiwan Semiconductor

10 Version:B1612

Notice

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,

assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, to

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sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,

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merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify TSC for any damages resulting from such improper use or sale.