BD676A - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

  !

  

. . . for use as output devices in complementary general–purpose amplifier applica-

tions.

•High DC Current Gain —

hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc

•Monolithic Construction

•BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A,

677, 677A, 679, 679A, 681

•BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATING

ÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎ

BD676

BD676A

ÎÎÎÎ

BD678

BD678A

ÎÎÎ

BD680

BD680A

ÎÎÎÎ

BD682

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎ

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎ

Collector Current

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

4.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

0.1

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎ

Total Device Dissipation

@ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

0.32

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperating Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎÎÎ

–55 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

θJC

ÎÎÎÎÎÎ

3.13

ÎÎÎ

C/W

5.0

015 30 45 60 75 105 135 150 165

Figure 1. Power Temperature Derating

TC, CASE TEMPERATURE (

PD, POWER DISSIPATION (WATTS)

12090



SEMICONDUCTOR TECHNICAL DATA Order this document

by BD676/D

 Motorola, Inc. 1995















4.0 AMPERE

DARLINGTON

POWER TRANSISTORS

PNP SILICON

45, 60, 80, 100 VOLTS

40 WATTS

CASE 77–08

TO–225AA TYPE

REV 7

      

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Breakdown Voltage(1) BD676, 676A

(IC = 50 mAdc, IB = 0) BD678, 678A

BD680, 680A

BD682

ÎÎÎÎ

BVCEO

ÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

500

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = Rated BVCEO, IE = 0)

(VCB = Rated BVCEO. IE = 0, TC = 100°C)

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

0.2

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain(1)

(IC = 1.5 Adc, VCE = 3.0 Vdc) BD676, 678, 680, 682

(IC = 2.0 Adc, VCE = 3.0 Vdc) BD676A, 678A, 680A

ÎÎÎÎ

hFE

ÎÎÎÎ

750

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage(1)

(IC = 1.5 Adc, IB = 30 mAdc) BD678, 680, 682

(IC = 2.0 Adc, IB = 40 mAdc) BD676A, 678A, 680A

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.5

2.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage(1)

(IC = 1.5 Adc, VCE = 3.0 Vdc) BD678, 680, 682

(IC = 2.0 Adc, VCE = 3.0 Vdc) BD676A, 678A, 680A

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

1.0

ÎÎÎÎ

—

ÎÎÎ

—

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

Figure 2. DC Safe Operating Area

5.0

1.0 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

2.0

1.0

0.5

0.05 2.0 5.0 10 50 100

BONDING WIRE LIMIT

THERMAL LIMIT at TC = 25

SECONDARY BREAKDOWN LIMIT

0.2

0.1

IC, COLLECTOR CURRENT (AMP)

TC = 25

CBD676, 676A

BD678, 678A

BD680, 680A

BD682

There are two limitations on the power handling ability of a

transistor average junction temperature and secondary

breakdown. Safe operating area curves indicate IC – VCE lim-

its of the transistor that must be observed for reliable opera-

tion; e.g., the transistor must not be subjected to greater

dissipation than the curves indicate.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the limita-

tions imposed by secondary breakdown.

Figure 3. Darlington Circuit Schematic

BASE

PNP

BD676, 676A

BD678, 678A

BD680, 680A

BD682

COLLECTOR

EMITTER

[

8.0 k

[

120

      

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 77–08

TO–225AA TYPE

ISSUE V

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–B–

–A– M

1 32

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.055 1.15 1.39

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 ––– 1.02 –––

_ _

      

4 Motorola Bipolar Power Transistor Device Data

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BD676/D

*BD676/D*

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