IRF9630, SiHF9630
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S16-0754-Rev. D, 02-May-16 2Document Number: 91084
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Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA -62
°C/WCase-to-Sink, Flat, Greased Surface RthCS 0.50 -
Maximum Junction-to-Case (Drain) RthJC -1.7
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = -250 μA -200 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = -1 mA - -0.24 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 μA -2.0 - -4.0 V
Gate-Source Leakage IGSS V
GS = ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current IDSS
VDS = -200 V, VGS = 0 V - - -100 μA
VDS = -160 V, VGS = 0 V, TJ = 125 °C - - -500
Drain-Source On-State Resistance RDS(on) V
GS = -10 V ID = -3.9 A b - - 0.80
Forward Transconductance gfs VDS = -50 V, ID = -3.9 A b 2.8 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V,
VDS = -25 V,
f = 1.0 MHz, see fig. 5
- 700 -
pFOutput Capacitance Coss - 200 -
Reverse Transfer Capacitance Crss -40-
Total Gate Charge Qg
VGS = -10 V
ID = -6.5 A,
VDS = -160 V,
see fig. 6 and 13 b
--29
nC Gate-Source Charge Qgs --5.4
Gate-Drain Charge Qgd --15
Turn-On Delay Time td(on)
VDD = -100 V, ID = -6.5 A,
Rg = 12 , RD = 15, see fig. 10 b
-12-
ns
Rise Time tr -27-
Turn-Off Delay Time td(off) -28-
Fall Time tf -24-
Internal Drain Inductance LD Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance LS-7.5-
Gate Input Resistance Rgf = 1 MHz, open drain 0.6 - 3.7
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS
MOSFET symbol
showing the
integral reverse
p -n junction diode
---6.5
A
Pulsed Diode Forward Current a ISM ---26
Body Diode Voltage VSD TJ = 25 °C, IS = -6.5 A, VGS = 0 V b---6.5V
Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = -6.5 A, dI/dt = 100 A/μs b - 200 300 ns
Body Diode Reverse Recovery Charge Qrr -1.92.9μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G