MIC4421/4422 Micrel, Inc.
August 2005 1 M9999-081005
MIC4421/4422
9A-Peak Low-Side MOSFET Driver
Bipolar/CMOS/DMOS Process
General Description
MIC4421 and MIC4422 MOSFET drivers are rugged, ef-
ficient, and easy to use. The MIC4421 is an inverting driver,
while the MIC4422 is a non-inverting driver.
Both versions are capable of 9A (peak) output and can drive
the largest MOSFETs with an improved safe operating mar-
gin. The MIC4421/4422 accepts any logic input from 2.4V to
VS without external speed-up capacitors or resistor networks.
Proprietary circuits allow the input to swing negative by as
much as 5V without damaging the part. Additional circuits
protect against damage from electrostatic discharge.
MIC4421/4422 drivers can replace three or more discrete
components, reducing PCB area requirements, simplifying
product design, and reducing assembly cost.
Modern Bipolar/CMOS/DMOS construction guarantees
freedom from latch-up. The rail-to-rail swing capability of
CMOS/DMOS insures adequate gate voltage to the MOS-
FET during power up/down sequencing. Since these devices
are fabricated on a self-aligned process, they have very low
crossover current, run cool, use little power, and are easy
to drive.
Features
• BiCMOS/DMOS Construction
• Latch-Up Proof: Fully Isolated Process is Inherently
Immune to Any Latch-up.
• Input Will Withstand Negative Swing of Up to 5V
• Matched Rise and Fall Times ............................... 25ns
• High Peak Output Current ...............................9A Peak
• Wide Operating Range .............................. 4.5V to 18V
• High Capacitive Load Drive ........................... 47,000pF
• Low Delay Time .............................................30ns Typ.
• Logic High Input for Any Voltage from 2.4V to VS
• Low Equivalent Input Capacitance (typ) ................. 7pF
• Low Supply Current .............. 450µA With Logic 1 Input
• Low Output Impedance .........................................1.5Ω
• Output Voltage Swing to Within 25mV of GND or VS
Applications
• Switch Mode Power Supplies
• Motor Controls
• Pulse Transformer Driver
• Class-D Switching Amplifiers
• Line Drivers
• Driving MOSFET or IGBT Parallel Chip Modules
• Local Power ON/OFF Switch
• Pulse Generators
Functional Diagram
IN
OUT
MIC4421
INVERTING
MIC4422
NONINVERTING
0.1mA
0.3m
A
2kΩ
VS
GND
Micrel, Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 474-1000 • http://www.micrel.com
MIC4421/4422 Micrel, Inc.
M9999-081005 2 August 2005
Ordering Information
Part Number
Standard PbFree Configuration Temp. Range Package
MIC4421BM MIC4421YM Inverting –40ºC to +85ºC 8-pin SOIC
MIC4421BN MIC4421YN Inverting –40ºC to +85ºC 8-pin DIP
MIC4421CM MIC4421ZM Inverting –0ºC to +70ºC 8-pin SOIC
MIC4421CN MIC4421ZN Inverting –0ºC to +70ºC 8-pin DIP
MIC4421CT MIC4421ZT Inverting –0ºC to +70ºC 5-pin TO-220
MIC4422BM MIC4422YM Non-inverting –40ºC to +85ºC 8-pin SOIC
MIC4422BN MIC4422YN Non-inverting –40ºC to +85ºC 8-pin DIP
MIC4422CM MIC4422ZM Non-inverting –0ºC to +70ºC 8-pin SOIC
MIC4422CN MIC4422ZN Non-inverting –0ºC to +70ºC 8-pin DIP
MIC4422CT MIC4422ZT Non-inverting –0ºC to +70ºC 5-pin TO-220
Pin Configurations
1
2
3
4
8
7
6
5
V S
OUT
OUT
GND
V S
IN
NC
GND
Plastic DIP (N)
SOIC (M)
5 OUT
4 GND
3 VS
2 GND
1 IN
TO-220-5 (T)
Pin Description
Pin Number Pin Number Pin Name Pin Function
TO-220-5 DIP, SOIC
1 2 IN Control Input
2, 4 4, 5 GND Ground: Duplicate pins must be externally connected together.
3, TAB 1, 8 VS Supply Input: Duplicate pins must be externally connected together.
5 6, 7 OUT Output: Duplicate pins must be externally connected together.
3 NC Not connected.
MIC4421/4422 Micrel, Inc.
August 2005 3 M9999-081005
Electrical Characteristics: (TA = 25°C with 4.5 V ≤ VS
≤ 18 V unless otherwise specified.)
Symbol Parameter Conditions Min Typ Max Units
INPUT
VIH Logic 1 Input Voltage 2.4 1.3 V
VIL Logic 0 Input Voltage 1.1 0.8 V
VIN Input Voltage Range –5 VS+0.3 V
IIN Input Current 0 V ≤ VIN ≤ VS –10 10 µA
OUTPUT
VOH High Output Voltage See Figure 1 VS–.025 V
VOL Low Output Voltage See Figure 1 0.025 V
RO Output Resistance, IOUT = 10 mA, VS = 18 V 0.6 Ω
Output High
RO Output Resistance, IOUT = 10 mA, VS = 18 V 0.8 1.7 Ω
Output Low
IPK Peak Output Current VS = 18 V (See Figure 6) 9 A
IDC Continuous Output Current 2 A
IR Latch-Up Protection Duty Cycle ≤ 2% >1500 mA
Withstand Reverse Current t ≤ 300 µs
SWITCHING TIME (Note 3)
tR Rise Time Test Figure 1, CL = 10,000 pF 20 75 ns
tF Fall Time Test Figure 1, CL = 10,000 pF 24 75 ns
tD1 Delay Time Test Figure 1 15 60 ns
tD2 Delay Time Test Figure 1 35 60 ns
POWER SUPPLY
IS Power Supply Current VIN = 3 V 0.4 1.5 mA
VIN = 0 V 80 150 µA
VS
Operating Input Voltage 4.5 18 V
Operating Ratings
Junction Temperature ................................................ 150°C
Ambient Temperature
C Version .................................................... 0°C to +70°C
B Version ................................................ –40°C to +85°C
Thermal Resistance
5-Pin TO-220 (θJC) ............................................... 10°C/W
Absolute Maximum Ratings (Notes 1, 2 and 3)
Supply Voltage .............................................................. 20V
Input Voltage ...................................VS + 0.3V to GND – 5V
Input Current (VIN > VS) .............................................. 50 mA
Power Dissipation, TA ≤ 25°C
PDIP .................................................................... 960mW
SOIC ..................................................................1040mW
5-Pin TO-220 .............................................................. 2W
Power Dissipation, TCASE ≤ 25°C
5-Pin TO-220 ......................................................... 12.5W
Derating Factors (to Ambient)
PDIP ................................................................ 7.7mW/°C
SOIC ................................................................8.3mW/°C
5-Pin TO-220 .................................................... 17mW/°C
Storage Temperature ................................ –65°C to +150°C
Lead Temperature (10 sec) ....................................... 300°C
MIC4421/4422 Micrel, Inc.
M9999-081005 4 August 2005
Figure 1. Inverting Driver Switching Time
Electrical Characteristics: (Over operating temperature range with 4.5V ≤ VS
≤ 18V unless otherwise specified.)
Symbol Parameter Conditions Min Typ Max Units
INPUT
VIH Logic 1 Input Voltage 2.4 1.4 V
VIL Logic 0 Input Voltage 1.0 0.8 V
VIN Input Voltage Range –5 VS+0.3 V
IIN Input Current 0V ≤ VIN ≤ VS –10 10 µA
OUTPUT
VOH High Output Voltage Figure 1 VS–.025 V
VOL Low Output Voltage Figure 1 0.025 V
RO Output Resistance, IOUT = 10mA, VS = 18V 0.8 3.6 Ω
Output High
RO Output Resistance, IOUT = 10mA, VS = 18V 1.3 2.7 Ω
Output Low
SWITCHING TIME (Note 3)
tR Rise Time Figure 1, CL = 10,000pF 23 120 ns
tF Fall Time Figure 1, CL = 10,000pF 30 120 ns
tD1 Delay Time Figure 1 20 80 ns
tD2 Delay Time Figure 1 40 80 ns
POWER SUPPLY
IS Power Supply Current VIN = 3V 0.6 3 mA
VIN = 0V 0.1 0.2
VS
Operating Input Voltage 4.5 18 V
Note 1: Functional operation above the absolute maximum stress ratings is not implied.
Note 2: Static-sensitive device. Store only in conductive containers. Handling personnel and equipment should be grounded to
prevent damage from static discharge.
Note 3: Switching times guaranteed by design.
Test Circuits
IN
MIC4421
OUT
15000pF
VS = 18V
0.1µF 4.7µF
0.1µF
IN
MIC4422
OUT
15000pF
VS = 18V
0.1µF 4.7µF
0.1µF
tD1
90%
10%
tF
10%
0V
5V
tD2
tR
VS
OUT PUT
INPUT 90%
0V
tP W ≥ 0.5µs
2.5V
tPW
90%
10%
tR
10%
0V
5V
tF
VS
OUT PUT
INPUT 90%
0V
tP W ≥ 0.5µs
tD1
tD2
tPW
2.5V
Figure 2. Noninverting Driver Switching Time
MIC4421/4422 Micrel, Inc.
August 2005 5 M9999-081005
4 6 8 10 12 14 16 18
220
200
180
160
140
120
100
80
60
40
0
SUPPLY VOLTAGE (V)
RISE TIME (ns)
Rise Time
vs. Supply Voltage
20
22,000pF
10,000pF
47,000pF
4 6 8 10 12 14 16 18
220
200
180
160
140
120
100
80
60
40
0
SUPPLY VOLTAGE (V)
FALL TIME (ns)
Fall Time
vs. Supply Voltage
20
22,000pF
10,000pF
47,000pF
60
50
40
30
20
10
0
TEMPERATURE (°C)
TIME (ns)
Rise and Fall Times
vs. Temperature
-40 0 40 80 120
CL = 10,000pF
VS = 18V
tFALL
tRISE
100 1000 10k 100k
300
250
200
150
100
50
0
CAPACITIVE LOAD (pF)
RISE TIME (ns)
Rise Time
vs. Capacitive Load
18V
10V
5V
100 1000 10k 100k
300
250
200
150
100
50
0
CAPACITIVE LOAD (pF)
FALL TIME (ns)
Fall Time
vs. Capacitive Load
18V
10V
5V
4 6 8 10 12 14 16 18
10-7
10-8
10-9
VOLTAGE (V)
CROSSOVER ENERGY (A•s)
Crossover Energy
vs. Supply Voltage
PER TRANSITION
100 1000 10k 100k
75
30
0
CAPACITIVE LOAD (pF)
SUPPLY CURRENT (mA)
Supply Current
vs. Capacitive Load
15
45
60
VS = 5V
50kH
z
1 MHz
200kHz
100 1000 10k 100k
220
160
100
40
0
CAPACITIVE LOAD (pF)
SUPPLY CURRENT (mA)
Supply Current
vs. Capacitive Load
20
60
80
120
140
180
200
VS = 18V
50kH
z
200kHz
1 MHz
100 1000 10k 100k
150
60
0
CAPACITIVE LOAD (pF)
SUPPLY CURRENT (mA)
Supply Current
vs. Capacitive Load
30
90
120
VS = 12V
50kH
z
1 MHz
200kHz
Typical Characteristics
10k 100k 1M 10M
120
100
40
0
FREQUENCY (Hz)
SUPPLY CURRENT (mA)
Supply Current
vs. Frequency
20
60
80
VS = 12V
0.1µF
0.01µF
1000pF
10k 100k 1M 10M
60
50
20
0
FREQUENCY (Hz)
SUPPLY CURRENT (mA)
Supply Current
vs. Frequency
10
30
40
VS = 5V
0.1µF
0.01µF
1000pF
10k 100k 1M 10M
180
160
100
40
0
FREQUENCY (Hz)
SUPPLY CURRENT (mA)
Supply Current
vs. Frequency
20
60
80
120
140
VS = 18V
0.1µF
0.01µF
1000pF
MIC4421/4422 Micrel, Inc.
M9999-081005 6 August 2005
4 6 8 10 12 14 16 18
50
40
30
20
0
SUPPLY VOLTAGE (V)
TIME (ns)
Propagation Delay
vs. Supply Voltage
10
tD2
tD1
0 2 4 6 8 10
120
110
100
70
60
50
40
30
20
10
0
INPUT (V)
TIME (ns)
Propagation Delay
vs. Input Amplitude
80
90
tD2
tD1
VS = 10V
-40 0 40 80 120
1000
100
10
TEMPERATURE (°C)
QUIESCENT SUPPLY CURRENT (µA)
Quiescent Supply Current
vs. Temperature
INPUT = 0
INPUT = 1
VS = 18V
4 6 8 10 12 14 16 18
2.4
2.2
2.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
SUPPLY VOLTAGE (V)
HIGH-STATE OUTPUT RESISTANCE (Ω)
High-State Output Resist.
vs. Supply Voltage
1.6
1.8
TJ = 25°C
TJ = 150°C
4 6 8 10 12 14 16 18
2.4
2.2
2.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
SUPPLY VOLTAGE (V)
LOW-STATE OUTPUT RESISTANCE (Ω)
Low-State Output Resist.
vs. Supply Voltage
1.6
1.8
TJ = 25°C
TJ = 150°C
-40 0 40 80 120
50
40
30
20
10
0
TEMPERATURE (°C)
TIME (ns)
Propagation Delay
vs. Temperature
tD2
tD1
Typical Characteristics
MIC4421/4422 Micrel, Inc.
August 2005 7 M9999-081005
Applications Information
Supply Bypassing
Charging and discharging large capacitive loads quickly
requires large currents. For example, charging a 10,000pF
load to 18V in 50ns requires 3.6A.
The MIC4421/4422 has double bonding on the supply pins,
the ground pins and output pins. This reduces parasitic
lead inductance. Low inductance enables large currents to
be switched rapidly. It also reduces internal ringing that can
cause voltage breakdown when the driver is operated at or
near the maximum rated voltage.
Internal ringing can also cause output oscillation due to
feedback. This feedback is added to the input signal since it
is referenced to the same ground.
Figure 3. Direct Motor Drive
Figure 4. Self Contained Voltage Doubler
30
29
28
27
26
25
0 50 100 150 200 250 300 350
mA
12 Ω LIN
E
OUTPUT VOLTAGE vs LOAD CURRENT
VOLTS
MIC4421
1µF
50V
MKS2
UN ITED CHEMC ON SX E
0.1µF
WIMA
MKS2
1
86, 7
5
4
0.1µF
50V
5.6 kΩ
560 Ω
+15
560µF 50V
BYV 10 (x 2)
100µF 50V
(x2) 1N4448
2
+
+
+
To guarantee low supply impedance over a wide frequency
range, a parallel capacitor combination is recommended for
supply bypassing. Low inductance ceramic disk capacitors
with short lead lengths (< 0.5 inch) should be used. A 1µF low
ESR film capacitor in parallel with two 0.1µF low ESR ceramic
capacitors, (such as AVX RAM Guard®), provides adequate
bypassing. Connect one ceramic capacitor directly between
pins 1 and 4. Connect the second ceramic capacitor directly
between pins 8 and 5.
Grounding
The high current capability of the MIC4421/4422 demands
careful PC board layout for best performance. Since the
MIC4421 is an inverting driver, any ground lead impedance
will appear as negative feedback which can degrade switching
speed. Feedback is especially noticeable with slow-rise time
inputs. The MIC4421 input structure includes about 200mV
of hysteresis to ensure clean transitions and freedom from
oscillation, but attention to layout is still recommended.
Figure 5 shows the feedback effect in detail. As the MIC4421
input begins to go positive, the output goes negative and
several amperes of current flow in the ground lead. As little
as 0.05Ω of PC trace resistance can produce hundreds of
millivolts at the MIC4421 ground pins. If the driving logic is
referenced to power ground, the effective logic input level is
reduced and oscillation may result.
To insure optimum performance, separate ground traces
should be provided for the logic and power connections. Con-
necting the logic ground directly to the MIC4421 GND pins
will ensure full logic drive to the input and ensure fast output
switching. Both of the MIC4421 GND pins should, however,
still be connected to power ground.
MIC4421/4422 Micrel, Inc.
M9999-081005 8 August 2005
Table 1: MIC4421 Maximum
Operating Frequency
VS Max Frequency
18V 220kHz
15V 300kHz
10V 640kHz
5V 2MHz
Conditions: 1. θJA = 150°C/W
2. TA = 25°C
3. CL = 10,000pF
dissipation limit can easily be exceeded. Therefore, some
attention should be given to power dissipation when driving
low impedance loads and/or operating at high frequency.
The supply current vs. frequency and supply current vs
capacitive load characteristic curves aid in determining
power dissipation calculations. Table 1 lists the maximum
safe operating frequency for several power supply volt-
ages when driving a 10,000pF load. More accurate power
dissipation figures can be obtained by summing the three
dissipation sources.
Given the power dissipation in the device, and the thermal
resistance of the package, junction operating temperature
for any ambient is easy to calculate. For example, the
thermal resistance of the 8-pin plastic DIP package, from
the data sheet, is 130°C/W. In a 25°C ambient, then, using
a maximum junction temperature of 150°C, this package
will dissipate 960mW.
Accurate power dissipation numbers can be obtained by
summing the three sources of power dissipation in the
device:
• Load Power Dissipation (PL)
• Quiescent power dissipation (PQ)
• Transition power dissipation (PT)
Calculation of load power dissipation differs depending on
whether the load is capacitive, resistive or inductive.
Resistive Load Power Dissipation
Dissipation caused by a resistive load can be calculated
as:
PL = I2 RO D
where:
I = the current drawn by the load
RO = the output resistance of the driver when the output
is high, at the power supply voltage used. (See data
sheet)
D = fraction of time the load is conducting (duty cycle)
Figure 5. Switching Time Degradation Due to
Negative Feedback
MIC4421
1
86, 7
5
4
+18
0.1µF
0.1µF
TEK CURRENT
PROBE 6302
2,500 pF
POLYCARBONATE
5.0V
0 V
18 V
0 V
300 mV
6 AMPS
PC TRACE RESISTANCE = 0.05Ω
LOGIC
GROUND
POWE
R
GROUND
WIMA
MKS-2
1 µF
Input Stage
The input voltage level of the MIC4421 changes the quies-
cent supply current. The N channel MOSFET input stage
transistor drives a 320µA current source load. With a logic
“1” input, the maximum quiescent supply current is 400µA.
Logic “0” input level signals reduce quiescent current to
80µA typical.
The MIC4421/4422 input is designed to provide 300mV of
hysteresis. This provides clean transitions, reduces noise
sensitivity, and minimizes output stage current spiking
when changing states. Input voltage threshold level is ap-
proximately 1.5V, making the device TTL compatible over
the full temperature and operating supply voltage ranges.
Input current is less than ±10µA.
The MIC4421 can be directly driven by the TL494,
SG1526/1527, SG1524, TSC170, MIC38C42, and similar
switch mode power supply integrated circuits. By offloading
the power-driving duties to the MIC4421/4422, the power
supply controller can operate at lower dissipation. This can
improve performance and reliability.
The input can be greater than the VS supply, however, cur-
rent will flow into the input lead. The input currents can be
as high as 30mA p-p (6.4mARMS) with the input. No damage
will occur to MIC4421/4422 however, and it will not latch.
The input appears as a 7pF capacitance and does not
change even if the input is driven from an AC source.
While the device will operate and no damage will occur up
to 25V below the negative rail, input current will increase
up to 1mA/V due to the clamping action of the input, ESD
diode, and 1kΩ resistor.
Power Dissipation
CMOS circuits usually permit the user to ignore power
dissipation. Logic families such as 4000 and 74C have out-
puts which can only supply a few milliamperes of current,
and even shorting outputs to ground will not force enough
current to destroy the device. The MIC4421/4422 on the
other hand, can source or sink several amperes and drive
large capacitive loads at high frequency. The package power
MIC4421/4422 Micrel, Inc.
August 2005 9 M9999-081005
Transition Power Dissipation
Transition power is dissipated in the driver each time its
output changes state, because during the transition, for a
very brief interval, both the N- and P-channel MOSFETs in
the output totem-pole are ON simultaneously, and a current
is conducted through them from VS to ground. The transition
power dissipation is approximately:
PT = 2 f VS (A•s)
where (A•s) is a time-current factor derived from the typical
characteristic curve “Crossover Energy vs. Supply Volt-
age.”
Total power (PD) then, as previously described is just
PD = PL + PQ + PT
Definitions
CL = Load Capacitance in Farads.
D = Duty Cycle expressed as the fraction of time the
input to the driver is high.
f = Operating Frequency of the driver in Hertz
IH = Power supply current drawn by a driver when both
inputs are high and neither output is loaded.
IL = Power supply current drawn by a driver when both
inputs are low and neither output is loaded.
ID = Output current from a driver in Amps.
PD = Total power dissipated in a driver in Watts.
PL = Power dissipated in the driver due to the driver’s
load in Watts.
PQ = Power dissipated in a quiescent driver in Watts.
PT = Power dissipated in a driver when the output
changes states (“shoot-through current”) in Watts.
NOTE: The “shoot-through” current from a dual
transition (once up, once down) for both drivers is
stated in Figure 7 in ampere-nanoseconds. This
figure must be multiplied by the number of repeti-
tions per second (frequency) to find Watts.
RO = Output resistance of a driver in Ohms.
VS = Power supply voltage to the IC in Volts.
Capacitive Load Power Dissipation
Dissipation caused by a capacitive load is simply the energy
placed in, or removed from, the load capacitance by the
driver. The energy stored in a capacitor is described by the
equation:
E = 1/2 C V2
As this energy is lost in the driver each time the load is charged
or discharged, for power dissipation calculations the 1/2 is
removed. This equation also shows that it is good practice
not to place more voltage in the capacitor than is necessary,
as dissipation increases as the square of the voltage applied
to the capacitor. For a driver with a capacitive load:
PL = f C (VS)2
where:
f = Operating Frequency
C = Load Capacitance
VS = Driver Supply Voltage
Inductive Load Power Dissipation
For inductive loads the situation is more complicated. For
the part of the cycle in which the driver is actively forcing
current into the inductor, the situation is the same as it is in
the resistive case:
PL1 = I2 RO D
However, in this instance the RO required may be either
the on resistance of the driver when its output is in the high
state, or its on resistance when the driver is in the low state,
depending on how the inductor is connected, and this is still
only half the story. For the part of the cycle when the induc-
tor is forcing current through the driver, dissipation is best
described as
PL2 = I VD (1 – D)
where VD is the forward drop of the clamp diode in the driver
(generally around 0.7V). The two parts of the load dissipation
must be summed in to produce PL
PL = PL1 + PL2
Quiescent Power Dissipation
Quiescent power dissipation (PQ, as described in the input
section) depends on whether the input is high or low. A low
input will result in a maximum current drain (per driver) of
≤ 0.2mA; a logic high will result in a current drain of ≤ 3.0mA.
Quiescent power can therefore be found from:
PQ = VS [D IH + (1 – D) IL]
where:
IH = quiescent current with input high
IL = quiescent current with input low
D = fraction of time input is high (duty cycle)
VS = power supply voltage
MIC4421/4422 Micrel, Inc.
M9999-081005 10 August 2005
MIC4421
1
86, 7
5
4
+18
V
0.1µF
0.1µF
TEK CURRENT
PROBE 6302
10,000 pF
POLYCARBONATE
5.0V
0 V
18 V
0 V
WIMA
MK22
1 µF
2
Figure 6. Peak Output Current Test Circuit
MIC4421/4422 Micrel, Inc.
August 2005 11 M9999-081005
Package Information
0.370 (9.40)
0.125 (3.18)
PIN 1
INCH (MM)
0.018 (0.57)
0.100 (2.54)
0.013 (0.330)
0.010 (0.254)
0.300 (7.62)
0.245 (6.22)
0.0375 (0.952)
0.130 (3.30)
8-Pin Plastic DIP (N)
45°
0°–8°
0.228 (5.79)
0.189 (4.8)
PLANE
MAX )
0.010 (0.25)
0.007 (0.18)
0.045 (1.14)
0.0040 (0.102)
0.013 (0.33)
0.150 (3.81)
TYP
PIN 1
INCHES (MM)
0.016 (0.40)
8-Pin SOIC (M)
MIC4421/4422 Micrel, Inc.
M9999-081005 12 August 2005
0.004 (0.10)
0.035 (0.89)
0.021 (0.53)
0.012 (0.03) R
0.0256 (0.65) TYP
0.012 (0.30) R
5°
0° MIN
0.112 (2.84)
0.116 (2.95)
0.012 (0.03)
0.007 (0.18)
0.005 (0.13)
0.038 (0.97)
0.032 (0.81)
INCH (MM)
0.187 (4.74)
8-Pin MSOP (MM)
0.018 ±0.008
(0.46 ±0.20)
0.268 REF
(6.81 REF)
0.032 ±0.005
(0.81 ±0.13)
0.550 ±0.010
(13.97 ±0.25)
7°
Typ.
SEATING
PLANE
0.578 ±0.018
(14.68 ±0.46)
0.108 ±0.005
(2.74 ±0.13)
0.050 ±0.005
(1.27 ±0.13)
0.150 D ±0.005
(3.81 D ±0.13)
0.400 ±0.015
(10.16 ±0.38)
0.177 ±0.008
(4.50 ±0.20)
0.103 ±0.013
(2.62 ±0.33)
0.241 ±0.017
(6.12 ±0.43)
0.067 ±0.005
(1.70 ±0.127)
inch
(mm)
Dimensions:
5-Lead TO-220 (T)
MICREL INC. 2180 FORTUNE DRIVE SAN JOSE, CA 95131 USA
TEL + 1 (408) 944-0800 FAX + 1 (408) 474-1000 WEB http://www.micrel.com
This information furnished by Micrel in this data sheet is believed to be accurate and reliable. However no responsibility is assumed by Micrel for its use.
Micrel reserves the right to change circuitry and specifications at any time without notification to the customer.
Micrel Products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product can
reasonably be expected to result in personal injury. Life support devices or systems are devices or systems that (a) are intended for surgical implant into
the body or (b) support or sustain life, and whose failure to perform can be reasonably expected to result in a significant injury to the user. A Purchaser's
use or sale of Micrel Products for use in life support appliances, devices or systems is a Purchaser's own risk and Purchaser agrees to fully indemnify
Micrel for any damages resulting from such use or sale.
© 2004 Micrel, Inc.