tm
March 2009
FDS6679AZ P-Channel PowerTrench® MOSFET
©2009 Fairchild Semiconductor Corporation
FDS6679AZ Rev. B2
www.fairchildsemi.com1
FDS6679AZ
P-Channel PowerTrench® MOSFET
-30V, -13A, 9mΩ
General Description
This P-Channel MOSFET is producted using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
Features
Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 6kV typical (note 3)
High performance trench technology for extremely low
rDS(on)
High power and current handing capability
RoHS Compliant
S
D
S
S
SO-8
D
D
D
G
1
7
5
2
8
4
6 3
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage -30 V
VGS Gate to Source Voltage ±25 V
ID
Drain Current -Continuous (Note 1a) -13 A
-Pulsed -65
PD
Power Dissipation for Single Operation (Note 1a) 2.5
W (Note 1b) 1.2
(Note 1c) 1.0
TJ, TSTG Operating and Storage Temperature -55 to +150 °C
RθJA Thermal Resistance , Junction to Ambient (Note 1a) 50 °C/W
RθJC Thermal Resistance , Junction to Case (Note 1) 25 °C/W
Device Marking Device Reel Size Tape Width Quantity
FDS6679AZ FDS6679AZ 13’’ 12mm 2500 units
FDS6679AZ P-Channel PowerTrench® MOSFET
www.fairchildsemi.com2©2009 Fairchild Semiconductor Corporation
FDS6679AZ Rev. B2
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -30 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250µA, referenced to
25°C -20 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = -24V, VGS=0V -1 µA
IGSS Gate to Source Leakage Current VGS = ±25V, VDS=0V ±10 µA
On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA-1 -1.9 -3 V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to
25°C 6.5 mV/°C
rDS(on) Drain to Source On Resistance
VGS = -10V, ID = -13A 7.7 9.3
mΩ
VGS = -4.5V, ID = -11A 11.8 14.8
VGS = -10V, ID = -13A,
TJ = 125°C 10.7 13.4
gFS Forward Transconductance VDS = -5V, ID = -13A 55 S
(Note 2)
Dynamic Characteristics
Ciss Input Capacitance VDS = -15V, VGS = 0V,
f = 1MHz
2890 3845 pF
Coss Output Capacitance 500 665 pF
Crss Reverse Transfer Capacitance 495 745 pF
Switching Characteristics (Note 2)
td(on) Turn-On Delay Time
VDD = -15V, ID = -1A
VGS = -10V, RGS = 6Ω
13 24 ns
trRise Time 15 27 ns
td(off) Turn-Off Delay Time 210 336 ns
tfFall Time 92 148 ns
QgTotal Gate Charge VDS = -15V, VGS = -10V,
ID = -13A 68 96 nC
QgTotal Gate Charge VDS = -15V, VGS = -5V,
ID = -13A
38 54 nC
Qgs Gate to Source Gate Charge 10 nC
Qgd Gate to Drain Charge 17 nC
Drain-Source Diode Characteristic
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -2.1A -0.7 -1.2 V
trr Reverse Recovery Time IF = -13A, di/dt = 100A/µs 40 ns
Qrr Reverse Recovery Charge IF = -13A, di/dt = 100A/µs -31 nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design.
Scale 1 : 1 on letter size paper
2: Pulse Test:Pulse Width <300µs, Duty Cycle <2.0%
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
a) 50°C/W when
mounted on a 1 in2
pad of 2 oz copper
b)105°C/W when
mounted on a .04 in2
pad of 2 oz copper
minimun pad
c) 125°C/W when
mounted on a
FDS6679AZ P-Channel PowerTrench® MOSFET
www.fairchildsemi.com3©2009 Fairchild Semiconductor Corporation
FDS6679AZ Rev. B2
Typical Characteristics TJ = 25°C unless otherwise noted
Figure 1. On Region Characteristics
01234
0
10
20
30
40
50
60
70
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = - 5V
VGS = - 4V
VGS = - 3V
VGS = - 3.5V
VGS = - 4.5V
VGS = - 10V
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Normalized
0 10203040506070
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT(A)
VGS = - 10V
VGS = - 5V
VGS = - 4.5V
VGS = - 4V
VGS = - 3.5V
On-Resistance vs Drain
Current and Gate Voltage
Figure 3.
-80 -40 0 40 80 120 160
0.6
0.8
1.0
1.2
1.4
1.6
ID = -13A
VGS = -10V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPERATURE (oC)
Normalized On Resistance vs Junction
Temperature
Figure 4.
3.04.56.07.59.0
0
10
20
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 150oC
TJ = 25oC
ID = -13A
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
-VGS, GATE TO SOURCE VOLTAGE (V)
10
On-Resistance vs Gate to Source
Voltage
Figure 5. Transfer Characteristics
2.0 2.5 3.0 3.5 4.0 4.5
0
10
20
30
40
50
60
70
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = -55oC
TJ = 25oC
TJ = 150oC
-ID, DRAIN CURRENT (A)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1E-3
0.01
0.1
1
10
100
TJ = -55oC
TJ = 25oC
TJ = 150oC
VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode Forward
Voltage vs Source Current
FDS6679AZ P-Channel PowerTrench® MOSFET
www.fairchildsemi.com4©2009 Fairchild Semiconductor Corporation
FDS6679AZ Rev. B2
Figure 7.
0 1530456075
0
2
4
6
8
10
VDD = -20V
VDD = -10V
-VGS, GATE TO SOURCE VOLTAGE(V)
Qg, GATE CHARGE(nC)
VDD = -15V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
10000
f = 1MHz
VGS = 0V
CAPACITANCE (pF)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
30
Capacitance vs Drain to Source Voltage
Figure 9. Ig vs VGS
0 5 10 15 20 25 30 35
1E-4
1E-3
0.01
0.1
1
10
100
1000
TJ = 150oC
TJ = 25oC
-Ig(uA)
-VGS(V)
Figure 10.
10-2 10-1 100101102
1
10
TJ = 25oC
TJ = 125oC
-IAS, AVALANCHE CURRENT(A)
20
tAV, TIME IN AVALANCHE(ms)
Unclamped Inductive Switching
Capability
Figure 11.
25 50 75 100 125 150
0
2
4
6
8
10
12
14
16
VGS = -10V
VGS = -4.5V
-ID, DRAIN CURRENT (A)
TA, AMBIENT TEMPERATURE (oC)
Maximum Continuous Drain Current vs
Ambient Temperature
Figure 12. Forward Bias Safe Operating Area
0.01 0.1 1 10 100
0.01
0.1
1
10
100
100 us
1 s
10 s
DC
100 ms
10 ms
1 ms
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
200
Typical Characteristics TJ = 25°C unless otherwise noted
FDS6679AZ P-Channel PowerTrench® MOSFET
www.fairchildsemi.com5©2009 Fairchild Semiconductor Corporation
FDS6679AZ Rev. B2
Figure 13.
10
-4
10
-3
10
-2
10
-1
11010
2
10
3
0.5
1
10
10
2
10
3
10
4
SINGLE PULSE
R
θ
JA
= 125
o
C/W
T
A
= 25
o
C
V
GS
= -10 V
P
(
PK
)
, PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Single Pulse Maximum Power Dissipation
Figure 14.
10
-4
10
-3
10
-2
10
-1
11010
2
10
3
10
-4
10
-3
10
-2
10
-1
1
SINGLE PULSE
R
θ
JA
= 125
o
C/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θ
JA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Junction-to-Ambient Transient Thermal Response Curve
Typical Characteristics TJ = 25°C unless otherwise noted
www.fairchildsemi.com
6
FDS6679AZ P-Channel PowerTrench® MOSFET
©2009 Fairchild Semiconductor Corporation
FDS6679AZ Rev. B2
Rev. I39
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™ *
™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW /W /kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
tm
®
tm
tm
Datasheet Identification Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
