MDM1200H45E2-H - Hitachi

DIODE MODULE Spec.No.SR2-SP-09005 R4

P1

MDM1200H45E2-H

Preliminary

Specification

FEATURES

∗ Low Reverse Recovery Loss diode module.

∗ Low noise recovery: Ultra soft fast recovery diode.

∗ High reverse recovery capability:

Super HiRC Structure.

∗ High reliability, high durability diodes.

∗ Isolated heat sink (terminal to base).

ABSOLUTE MAXIMUM RATINGS

(TC=25

℃

)

Item Symbol Unit MDM1200H45E2-H

Repetitive Peak Reverse Voltage V

RRM

V 4,500

AC peak I

MFpeak

1,200

Forward Current 1ms I

Fpulse

A 2,400

Junction Temperature Tj

℃

-40

～

+125

Storage Temperature Tstg

℃

-40

～

+125 (1)

Terminals-base V

ISO

8,400 (AC 1 minute)

Isolation Test

Voltage Terminal 1-Terminal 2

V

ISO T-T

V

RMS

8,400 (AC 1 minute)

Terminals (M8) - 10 (2)

Screw Torque Mounting (M6) - N·m 6 (3)

Notes: (1) Terminal temperature shall not exceed the specified temperature in any operation

.

(2) Recommended Value 9±1N·m (3) Recommended Value 5.5±0.5N·m

ELECTRICAL CHARECTERISTICS

Item Symbol

Unit

Min.

Typ.

Max.

Test Conditions

Repetitive Reverse Current I

RRM

mA - 2.0

25 VAK=4,500V, Tj=125

℃

Forward Voltage Drop V

F

V TBD

4.2

4.7

IF=1,200A, Tj=125

℃

Reverse Recovery Time trr µs - 0.9

1.8

Reverse Recovery Loss E

rr(10%)

J/P - 2.7

4.0

V

CC

=2,600V, IF=1,200A, Ls=180nH

Tj=125

o

C Rg=3.3

Ω

(4)

PACKAGE CHARECTERISTICS

Item Symbol

Unit

Min.

Typ.

Max.

Test Conditions

Terminal Resistance R

CE

m

Ω

- 0.3

- per arm

Terminal Stray Inductance Ls

CE

nH - 42 - per arm

Thermal Impedance Rth(j-c)

K/W

- - 0.017

Junction to case (per arm)

Comparative tracking index CTI - 600

-

Contact Thermal Impedance

Rth(c-f)

K/W

- 0.007

-

Case to fin (λgrease=1W/(m

･

K),

Heat-sink flatness ≤50um)

Notes:(4) Counter arm; MBN1200H45E2-H VGE=+/-15V

R

G

value is the test condition’s value for evaluation of the switching times, not recommended value.

Please, determine the suitable R

G

value after the measurement of switching waveforms

(overshoot voltage, etc.) with appliance mounted.

* Please contact our representatives at order.

* For improvement, specifications are subject to change without notice.

* For actual application, please confirm this spec sheet is the newest revision.

CIRCUIT DIAGRAM

C(K)

E(A)

C(K)

E(A)

IMFpeak=1200A

IMF(RMS)<450A

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DIODE MODULE Spec.No.SR2-SP-09005 R4

P2

MDM1200H45E2-H

Preliminary

Specification

MBN1200H45E2-H

Vcc

Ls

L

LOAD

DUT

Rg

G/D

Fig.2 Definition of stray inductance

Fig.3 Definition of switching loss

Ic

t

0

VL

tL

Vce

t=t

L

Ls=

V

L

dIc

d

ｔ

(

)

Fig.1 Switching test circuit

0.1IF

t3 t4

Vce

0.1Vce

0.5Irm

Irm

-Ic

trr

t2t1

t

0

IF

t2

t1

Err(10%)=

∫

IF

･

Vce dt

Err(Full)=

∫

IF

･

Vce dt

t4

t3

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DIODE MODULE Spec.No.SR2-SP-09005 R4

P3

MDM1200H45E2-H

Preliminary

Specification

STATIC CHARACTERISTICS

TYPICAL

0

200

400

600

800

1000

1200

1400

1600

1800

2000

0.0 1.0 2.0 3.0 4.0 5.0 6.0

Forward Voltage VF (V)

Forward Current IF (A)

Forward Voltage of diode

Tj=25℃ Tj=125℃

DYNAMIC CHARACTERISTICS

TYPICAL

0.0

1.0

2.0

3.0

4.0

0 200 400 600 800 1000 1200 1400

Forward Current IF (A)

Reverse Recovery Loss Err (J)

Vcc=2600V

L=180nH

Tj=125

℃

counter arm;

MBN1200H45E2-H

VGE=+/-15V

RG=3.3

Ω

Recovery Loss vs. Forward Current

Err(10%)

Err(full)

TYPICAL

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0 200 400 600 800 1000 1200 1400

Forward Current IF (A)

Reverse Recovery Time trr (us)

Vcc=2600V

L=180nH

Tj=125

℃

counter arm;

MBN1200H45E2-H

VGE=+/-15V

RG=3.3

Ω

Recovery Time vs. Forward Current

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DIODE MODULE Spec.No.SR2-SP-09005 R4

P4

MDM1200H45E2-H

Preliminary

Specification

TRANSIENT THERMAL IMPEDANCE

0.0001

0.001

0.01

0.1

0.001 0.01 0.1 1 10

Time : t(s)

Transient Thermal Impedance Curve

Maximum

Transient thermal impedance : Zth(j-c) (K/W)

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DIODE MODULE Spec.No.SR2-SP-09005 R4

P5

MDM1200H45E2-H

Preliminary

Specification

OUTLINE DRAWING

Unit in mm

Weight: 1050(g)

Negative environmental impact material

Please note the following negative environmental impact materials are contained in the

product in order to keep product characteristic and reliability level.

Material Contained part

Lead (Pb) and its compounds Solder

48.5

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DIODE MODULE Spec.No.SR2-SP-09005 R4

P6

MDM1200H45E2-H

Preliminary

Specification

HITACHI POWER SEMICONDUCTORS



For inquiries relating to the products, please contact nearest overseas representatives which is located

“Inquiry” portion on the top page of a home page.

Hitachi power semiconductor home page address http://www.hitachi.co.jp/products/power/pse/

Notices

NoticesNotices

Notices

1. The information given herein, including the specifications and dimensions, is subject to

change without prior notice to improve product characteristics. Before ordering,

purchasers are advised to contact Hitachi sales department for the latest version of this

data sheets.

2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure

before use.

3. In cases where extremely high reliability is required(such as use in nuclear power control,

aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel

control equipment and various kinds of safety equipment), safety should be ensured by

using semiconductor devices that feature assured safety or by means of users’ fail-safe

precautions or other arrangement. Or consult Hitachi’s sales department staff.

4. In no event shall Hitachi be liable for any damages that may result from an accident or

any other cause during operation of the user’s units according to this data sheets. Hitachi

assumes no responsibility for any intellectual property claims or any other problems that

may result from applications of information, products or circuits described in this data

sheets.

5. In no event shall Hitachi be liable for any failure in a semiconductor device or any

secondary damage resulting from use at a value exceeding the absolute maximum rating.

6. No license is granted by this data sheets under any patents or other rights of any third

party or Hitachi, Ltd.

7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,

without the expressed written permission of Hitachi, Ltd.

8. The products (technologies) described in this data sheets are not to be provided to any

party whose purpose in their application will hinder maintenance of international peace

and safety not are they to be applied to that purpose by their direct purchasers or any

third party. When exporting these products (technologies), the necessary procedures are

to be taken in accordance with related laws and regulations.

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