2SK1151(L)(S), 2SK1152(L)(S) Silicon N-Channel MOS FET ADE-208-1245 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline DPAK-1 4 4 1 1 2 3 2 3 D 1. Gate 2. Drain 3. Source 4. Drain G S 2SK1151(L)(S), 2SK1152(L)(S) Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage 2SK1151 Symbol Ratings Unit VDSS 450 V 2SK1152 500 Gate to source voltage VGSS Drain current ID Drain peak current I D(pulse)* Body to drain diode reverse drain current I DR 2 1 30 V 1.5 A 6 A 1.5 A Channel dissipation Pch* 20 W Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C 2 2SK1151(L)(S), 2SK1152(L)(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Drain to source 2SK1151 V(BR)DSS 450 breakdown voltage 2SK1152 500 Typ Max Unit Test conditions -- -- V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 30 -- -- V I G = 100 A, VDS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 25 V, VDS = 0 Zero gate voltage 2SK1151 I DSS -- -- 100 A VDS = 360 V, VGS = 0 drain current 2SK1152 Gate to source cutoff voltage VDS = 400 V, VGS = 0 VGS(off) 2.0 -- 3.0 Static Drain to source 2SK1151 RDS(on) -- 3.5 5.5 on stateresistance -- 4.0 6.0 2SK1152 V I D = 1 mA, VDS = 10 V I D = 1 A, VGS = 10 V *1 Forward transfer admittance |yfs| 0.6 1.1 -- S I D = 1 A, VDS = 20 V *1 Input capacitance Ciss -- 160 -- pF VDS = 10 V, VGS = 0, Output capacitance Coss -- 45 -- pF f = 1 MHz Reverse transfer capacitance Crss -- 5 -- pF Turn-on delay time t d(on) -- 5 -- ns I D = 1 A, VGS = 10 V, Rise time tr -- 10 -- ns RL = 30 Turn-off delay time t d(off) -- 20 -- ns Fall time tf -- 10 -- ns Body to drain diode forward voltage VDF -- 1.0 -- V I F = 1.5 A, VGS = 0 Body to drain diode reverse recovery time t rr -- 220 -- ns I F = 1.5 A, VGS = 0, diF/dt = 100 A/s Note: 1. Pulse test 3 2SK1151(L)(S), 2SK1152(L)(S) Maximum Safe Operation Area Power vs. Temperature Derating O pe s ra tio n (T C 0.1 = ) ot Sh 0.3 (1 Drain Current ID (A) C s m s m 10 Channel Dissipation Pch (W) D s 0 1 = 10 1.0 10 PW 20 10 3 O a pe by rea rat R is ion DS lim in (o i t n) ted his 10 30 25 C ) 2SK1151 0.03 Ta = 25C 2SK1152 0.01 0 50 100 Case Temperature TC (C) 150 1 Typical Output Characteristics Drain Current ID (A) 1.6 15 V Pulse Test Typical Transfer Characteristics 2.0 5V 6V 10 V 4.5 V 1.2 0.8 4V 0.4 1.2 0.8 75C 4 -25C 0.4 VGS = 3.5 V 0 VDS = 20 V Pulse Test 1.6 Drain Current ID (A) 2.0 10 1,000 100 Drain to Source Voltage VDS (V) 4 8 12 16 Drain to Source Voltage VDS (V) TC = 25C 20 0 2 4 6 8 Gate to Source Voltage VGS (V) 10 2SK1151(L)(S), 2SK1152(L)(S) Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) () Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (V) 20 Pulse Test 16 12 2A 8 1A 4 ID = 0.5 A 0 4 8 12 16 Gate to Source Voltage VGS (V) 20 100 50 10 Forward Transfer Admittance yfs (S) Static Drain-Source on State Resistance RDS (on) () ID = 2 A 4 VGS = 10 V Pulse Test 1A 0.5 A 2 0 -40 0 40 80 120 Case Temperature TC (C) 15 V 5 2 1 0.05 0.1 0.2 0.5 1.0 2 Drain Current ID (A) 5 Forward Transfer Admittance vs. Drain Current 10 6 VGS = 10 V 20 Static Drain to Source on State Resistance vs. Temperature 8 Pulse Test 160 5 2 VDS = 20 V Pulse Test -25C 1.0 TC = 25C 0.5 75C 0.2 0.1 0.05 0.1 0.5 1.0 0.2 2 Drain Current ID (A) 5 5 2SK1151(L)(S), 2SK1152(L)(S) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 500 1,000 di/dt = 100A/s, Ta = 25C VGS = 0 Pulse Test 200 100 50 VGS = 0 f = 1 MHz Ciss Capacitance C (pF) Reverse Recovery Time trr (ns) 1,000 100 Coss 10 20 10 0.05 Crss 0.1 0.2 0.5 1.0 2 Reverse Drain Current IDR (A) 1 5 0 10 20 30 40 Drain to Source Voltage VDS (V) Switching Characteristics Dynamic Input Characteristics 500 100 20 VGS 8 200 VDD = 400 V 250 V 100 V 100 2 ID = 1.5 A 4 6 8 Gate Charge Qg (nc) 4 0 10 50 Switching Time t (ns) 12 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) 16 400 V 300 0 6 * 250 V VDS VGS = 10 V VDD = 30 V PW = 2 s, duty < 1% * 100 V 400 50 td (off) 20 tf 10 td (on) 5 tr 2 1 0.05 0.1 0.2 0.5 1.0 2 Drain Current ID (A) 5 2SK1151(L)(S), 2SK1152(L)(S) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 2.0 Pulse Test 1.6 1.2 0.8 0.4 5 V,10 V VGS=0, -10V Normalized Transient Thermal Impedance S (t) 0 0.4 0.8 1.2 1.6 Source to Drain Voltage VSD (V) 2.0 Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C D=1 1.0 0.5 0.3 0.2 0.1 0.05 0.02 ch-c(t) = S (t) * ch-c ch-c = 6.25C/W, TC = 25C 0.1 0.03 PDM D = PW T e ls 0.01 ot Pu h S 1 0.01 10 PW T 100 1m 10 m 100 m Pulse Width PW (s) 1 10 Switching Time Test Circuit Wavewforms Vin Monitor 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 10 % 50 Vin = 10 V . 30 V VDD = . td (on) 90 % tr 90 % td (off) tf 7 2SK1151(L)(S), 2SK1152(L)(S) Package Dimensions As of January, 2001 1.7 0.5 Unit: mm 2.3 0.2 0.55 0.1 5.5 0.5 6.5 0.5 5.4 0.5 2.29 0.5 16.2 0.5 1.15 0.1 0.8 0.1 3.1 0.5 1.2 0.3 2.29 0.5 0.55 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) 8 DPAK (L)-(1) -- Conforms 0.42 g 2SK1151(L)(S), 2SK1152(L)(S) As of January, 2001 2.3 0.2 0.55 0.1 (4.9) (5.3) 6.5 0.5 5.4 0.5 1.2 Max 5.5 0.5 1.7 0.5 Unit: mm 0 - 0.25 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 0.55 0.1 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (S)-(1),(2) -- Conforms 0.28 g 9 2SK1151(L)(S), 2SK1152(L)(S) As of January, 2001 (0.1) 2.3 0.2 0.55 0.1 (5.1) (5.1) (0.1) 6.5 0.5 5.4 0.5 1.2 Max 5.5 0.5 1.5 0.5 Unit: mm 0 - 0.25 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 0.55 0.1 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) 10 DPAK (S)-(3) -- Conforms 0.28 g 2SK1151(L)(S), 2SK1152(L)(S) Cautions 1. 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