2SK1152(L)(S) - Renesas Technology / Hitachi Semiconductor

2SK1151(L)(S), 2SK1152(L)(S)

Silicon N-Channel MOS FET

ADE-208-1245 (Z)

1st. Edition

Mar. 2001

Application

High speed power switching

Features

• Low on-resistance

• High speed switching

• Low drive current

• No secondary breakdown

• Suitable for switching regulator and DC-DC converter

Outline

123

DPAK-1

1. Gate

2. Drain

3. Source

4. Drain

2SK1151(L)(S), 2SK1152(L)(S)

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage 2SK1151 VDSS 450 V

2SK1152 500

Gate to source voltage VGSS ±30 V

Drain current ID1.5 A

Drain peak current ID(pulse)*16A

Body to drain diode reverse drain current IDR 1.5 A

Channel dissipation Pch*220 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. PW 10 µs, duty cycle 1%

2. Value at TC = 25°C

2SK1151(L)(S), 2SK1152(L)(S)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Drain to source 2SK1151 V(BR)DSS 450 — — V ID = 10 mA, VGS = 0

breakdown voltage 2SK1152 500

Gate to source breakdown

voltage V(BR)GSS ±30 — — V IG = ±100 µA, VDS = 0

Gate to source leak current IGSS — — ±10 µA VGS = ±25 V, VDS = 0

Zero gate voltage 2SK1151 IDSS — — 100 µA VDS = 360 V, VGS = 0

drain current 2SK1152 VDS = 400 V, VGS = 0

Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V ID = 1 mA, VDS = 10 V

Static Drain to source 2SK1151 RDS(on) — 3.5 5.5 ID = 1 A, VGS = 10 V *1

on stateresistance 2SK1152 — 4.0 6.0

Forward transfer admittance |yfs| 0.6 1.1 — S ID = 1 A, VDS = 20 V *1

Input capacitance Ciss — 160 — pF VDS = 10 V, VGS = 0,

Output capacitance Coss — 45 — pF f = 1 MHz

Reverse transfer capacitance Crss — 5 — pF

Turn-on delay time td(on) —5 —nsI

= 1 A, VGS = 10 V,

Rise time tr— 10 — ns RL = 30

Turn-off delay time td(off) —20—ns

Fall time tf—10—ns

Body to drain diode forward

voltage VDF — 1.0 — V IF = 1.5 A, VGS = 0

Body to drain diode reverse

recovery time trr — 220 — ns IF = 1.5 A, VGS = 0,

diF/dt = 100 A/µs

Note: 1. Pulse test

2SK1151(L)(S), 2SK1152(L)(S)

Power vs. Temperature Derating

Channel Dissipation Pch (W)

50 100 150

Case Temperature T

(°C)

Maximum Safe Operation Area

1 10 1,000

Drain to Source Voltage VDS (V)

0.1

0.03

1 ms

100

Ta = 25°C

DC Operation (T

= 25°C)

PW = 10ms (1 Shot)

2SK1151

2SK1152

Drain Current ID (A)

0.01

100 µs

0.3

1.0

10 µs

Operation in this

area is limited

by R

DS (on)

Typical Output Characteristics

2.0

1.6

1.2

0.8

04 8 12 16 20

Pulse Test

0.4

Drain Current ID (A)

= 3.5 V

6 V

Drain to Source Voltage VDS (V)

4 V

4.5 V

10 V

5 V

15 V

Typical Transfer Characteristics

1.6

1.2

0.8

0.4

0246810

Gate to Source Voltage VGS (V)

2.0

Drain Current ID (A)

VDS = 20 V

Pulse Test

–25°C

TC = 25°C

75°C

2SK1151(L)(S), 2SK1152(L)(S)

04 8 12 16 20

Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

1 A

ID = 0.5 A

Drain to Source Saturation Voltage

VDS (on) (V)

Pulse Test

2 A

100

10.1 0.2 0.5 1.0 5

Drain Current ID (A)

0.05

Static Drain to Source on State

Resistance vs. Drain Current

Pulse Test

15 V

VGS = 10 V

Static Drain to Source on State Resistance

RDS (on) (Ω)

00 40 80 120 160

Case Temperature TC (°C)

–40

Static Drain to Source on State

Resistance vs. Temperature

VGS = 10 V

Pulse Test

Static Drain-Source on State Resistance

RDS (on) (Ω)

ID = 2 A

0.5 A

1 A

Forward Transfer Admittance

vs. Drain Current

1.0

0.5

0.05 0.1 0.2 1.0 2 5

Drain Current ID (A)

0.1

0.2

0.5

VDS = 20 V

Pulse Test

75°C

–25°C

Forward Transfer Admittance yfs (S)

TC = 25°C

2SK1151(L)(S), 2SK1152(L)(S)

Body to Drain Diode Reverse

Recovery Time

di/dt = 100A/µs, Ta = 25°C

VGS = 0

Pulse Test

Reverse Drain Current IDR (A)

Reverse Recovery Time trr (ns)

1,000

500

100

200

0.05 0.1 0.2 0.5 1.0 2 5

Typical Capacitance

vs. Drain to Source Voltage

1,000

100

10 1020304050

Drain to Source Voltage VDS (V)

Capacitance C (pF)

Coss

Ciss

Crss

VGS = 0

f = 1 MHz

Dynamic Input Characteristics

500

400

300

200

100

0246810

Gate Charge Qg (nc)

Drain to Source Voltage VDS (V)

Gate to Source Voltage VGS (V)

400 V

100 V

VDS

ID = 1.5 A

VGS

250 V

VDD = 400 V

250 V

100 V

Switching Characteristics

100

Switching Time t (ns)

0.05 0.1 0.2 0.5 1.0 2 5

Drain Current ID (A)

VGS = 10 V VDD = 30 V

PW = 2 µs, duty < 1%

td (on)

td (off)

•

2SK1151(L)(S), 2SK1152(L)(S)

Reverse Drain Current vs.

Source to Drain Voltage

2.0

1.6

1.2

0.8

0.4

00.4 0.8 1.2 1.6 2.0

Source to Drain Voltage VSD (V)

Reverse Drain Current IDR (A)

Pulse Test

5 V,10 V

VGS=0, –10V

1.0

0.1

0.03

0.01

0.3

10 µ100 µ1 m 10 m 100 m 1 10

Pulse Width PW (s)

θch–c(t) = γS (t) · θch–c

θch–c = 6.25°C/W, TC = 25°C

PDM

D = T

Normalized Transient Thermal Impedance vs. Pulse Width

Normalized Transient Thermal Impedance γS (t)

TC = 25°C

0.05

0.02

0.2

0.1

0.5

D = 1

1 Shot Pulse

0.01

Vin Monitor

Vout Monitor

50 Ω

Vin = 10 V

D.U.T

VDD = 30 V

Switching Time Test Circuit

Vin 10 %

90 %

10 %

td (on) td (off)

trtf

Vout 10 %

Wavewforms

2SK1151(L)(S), 2SK1152(L)(S)

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

DPAK (L)-(1)

—

Conforms

0.42 g

6.5 ± 0.5 2.3 ± 0.2

0.55 ± 0.1

1.2 ± 0.3

0.55 ± 0.1

5.5 ± 0.5 1.7 ± 0.5

16.2 ± 0.5

3.1 ± 0.5

5.4 ± 0.5

1.15 ± 0.1

2.29 ± 0.5 2.29 ± 0.5

0.8 ± 0.1

As of January, 2001

Unit: mm

2SK1151(L)(S), 2SK1152(L)(S)

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

DPAK (S)-(1),(2)

—

Conforms

0.28 g

As of January, 2001

Unit: mm

6.5 ± 0.5

5.4 ± 0.5 2.3 ± 0.2

0.55 ± 0.1

0 – 0.25

0.55 ± 0.1

1.7 ± 0.5

5.5 ± 0.5

2.5 ± 0.5

1.15 ± 0.1

0.8 ± 0.1

2.29 ± 0.5

1.2 Max

(4.9)

(5.3)

2SK1151(L)(S), 2SK1152(L)(S)

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

DPAK (S)-(3)

—

Conforms

0.28 g

As of January, 2001

Unit: mm

6.5 ± 0.5

5.4 ± 0.5 2.3 ± 0.2

0.55 ± 0.1

0 – 0.25

0.55 ± 0.1

1.5 ± 0.5

5.5 ± 0.5

2.5 ± 0.5

1.15 ± 0.1

0.8 ± 0.1

2.29 ± 0.5

1.2 Max

(5.1)

(0.1)(0.1)

2SK1151(L)(S), 2SK1152(L)(S)

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for maximum rating, operating supply voltage range, heat radiation characteristics, installation

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failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

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