D45C Series PNP POWER TRANSISTORS COMPLEMENTARY TO THE D44C SERIES -30 - -80 VOLTS -4 AMP, 30 WATTS The General Electric D45C is a power transistor designed for various specific and general purpose applications, such as: couroror output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0 MHz; series, shunt and switching ease regulators; low and high frequency inverters/converters; and many others. EMITTER CASE STYLE TQ-220AB DIMENSIONS ARE IN INCHES AND (MILLIMETERS) Features: s04i10.26) 191295) 7012.78) SE PNP complement to D44C NPN fr sseores fT 014.32) be aa ot . ' , - e Very Low collector saturation voltage (-0.5V typ. @ -3.0A I<) ay aese7a| 2416. - cas e Excellent linearity t ' regeciahase * Fast Switching aiaeel i 078 ala 4 | y + .130(3.3) Rig TERM.1 .B00(12.7)MIN. TERM.2 055(1.39 TERM.3 sees a He a (twee [TeRM1 | TeRM2 | TeRM3 | TaB | [ro-220-a8| BASE | COLLECTOR | EMITTER | COLLECTOR | maximum ratings (T, = 25C) (unless otherwise specified) RATING SYMBOL D45C1,2,3 | D45C4,5,6 | D45C7, 8,9 | D45C10, 11, 12 | UNITS Collector-Emitter Voltage VCEO -30 ~45 -60 ~80 Volts Collector-Emitter Voltage VCES -40 -55 -70 -90 Volts Emitter Base Voltage VEBO -5 -5 -5 5 Volts Collector Current Continuous lo -4 -4 -4 ~4 A Peak(1) Icom -6 -6 -6 -6 Base Current Continuous Ip 2 2 2 2 A Total Power Dissipation @ Ta = 25C Pp 1.67 1.67 1.67 1.67 Watts @To= 26C 30 30 30 30 ee lature Range. Junction Ty, Tstg -55 to +150 | -55to +150 | -55 to +150 -55 to +150 C thermal characteristics Thermal Resistance, Junction to Ambient RgJa 75 75 75 75 C/W Thermal Resistance, Junction to Case Rgc 4.2 4.2 4.2 4.2 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds Te +260 +260 +260 +260 Cc (1) Pulse Test Pulse Width = 300ms Duty Cycle < 2%. 411electrical characteristics (To = 25C) (unless otherwise specified) [ CHARACTERISTIC -{symBoL | MIN | TYP | MAX | UNIT | off characteristics Collector-Emitter Sustaining Voltage D45C1, 2,3 VCEO(sus) ~30 _ Volts (I = -100mA) D45C4, 5, 6 ~45 _ D45C7, 8,9 ~60 _ _ D45C10, 11, 12 ~80 _ _ Collector Cutoff Current (VcE = Rated VcEs) IcES _- = -10 HA Emitter Cutoff Current (Vep = 5V) lEBO _- -100 HA second breakdown | Second Breakdown with Base Forward Biased | FBSOA_ | SEE FIGURE 3 | on characteristics DC Current Gain D45C1, 4, 7, 10 here 25 _ (Ig = -0.2A, Voge = -1V) D45C2, 5, 8, 11 40 - 120 D45C3, 6, 9, 12 40 120 (Io =-1A, Voge = -1V) D45C1, 4, 7, 10 hee 10 c c D45C2, 5, 8, 11 20 _ _ (Ic = -2A, Voge = -1V) D45C3, 6, 9, 12 hee 20 Collector-Emitter Saturation Voltage (Ic =-1A, Ip =-50mA) D45C2, 5, 8, 11 Vck(sat) ~0.5 Volts D45C3, 6, 9, 12 _ -0.5 (Io =-1A, lg = -100mA) D43C1, 4, 7, 10 -0.5 Base-Emitter Saturation Voltage (Ig =-1A, Ig = -100mA) VBE(sat) 1.3 Volts dynamic characteristics Collector Capacitance (Vop = -10V, f = MH) CcBo 125 pF Current-Gain Bandwidth Product (Ic = -20MA, Voce = -4V) fr 40 MHz switching characteristics Resistive Load Delay * Io = ~1A, Igq = Ipo = -0.1A, tg + ty _ 50 ~ ns Storage Time ts 500 -- Voc = -1A, tp = 25 psec Fall Time ce peer ty 50 (1) Pulse Test PW = 300ms Duty Cycle < 2%. 412ic - COLLECTOR CURRENT - AMPERES -1 T, 26C Voge 44 VOLT cet e-5 VOLTS 04562,3,5,6,8,9,11,12 w=y, Ig-COLLECTOR CURRENT~ AMPERES FIG.1 TYPICAL hee VS. Ic ty SEC PULSES 104 SEC PULSES 100 SEC PULSES 10004 SEC PULSES MAX. DC POWER DISSIPATION AT 70C CASE FORWARD BIASED OPERATION DUTY CYCLE < 50% To 70C VCES MAX. D45C1, 2, 3 VCES MAX. D45C4, 5, 6 Voces MAX. D45C7, 8,9 VES MAX. D45C10, 11, 12 1 2 4 6-8 -10 -20 Voce - COLLECTOR TO EMITTER VOLTAGE - VOLTS FIG.3 SAFE REGION OF OPERATION -40 -60 -80 -100 TRANSIENT THERMAL IMPEDANCE - C/WATT FIG. 4 413 SATURATION VOLTAGE S-VOLTS -.01 1 2 . ame Ty 7150 T, 28C 02 D4 0608-01 - 160 Ie7 COLLECTOR CURRENT- AMPERES FIG.2 TYPICAL SATURATION VOLTAGE CHARACTERISTICS VoE = -10V Ic = -500 mA 10? TIME - SECONDS MAXIMUM TRANSIENT THERMAL IMPEDANCE