BC807W / BC808W BC807W / BC808W Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren fur die Oberflachenmontage PNP PNP Version 2010-05-21 20.1 0.3 10.1 Type Code 1 1.250.1 2.10.1 3 2 1.3 Dimensions - Mae [mm] 1=B 2=E 3=C Power dissipation - Verlustleistung 200 mW Plastic case Kunststoffgehause SOT-323 Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25C) Grenzwerte (TA = 25C) BC807W BC808W Collector-Emitter-volt. - Kollektor-Emitter-Spannung E-B short - VCES 50 V 30 V Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open - VCEO 45 V 25 V Emitter-Base-voltage - Emitter-Basis-Spannung C open - VEBO 5V Power dissipation - Verlustleistung Ptot 200 mW 1) Collector current - Kollektorstrom (dc) - IC 500 mA Peak Collector current - Kollektor-Spitzenstrom - ICM 1A IEM 1A - IBM 200 mA Tj TS -55...+150C -55...+150C Peak Emitter current - Emitter-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. 100 160 250 - - - 250 400 600 40 - - - - 0.7 V 2 DC current gain - Kollektor-Basis-Stromverhaltnis ) - VCE = 1 V, - IC = 100 mA Group -16 Group -25 Group -40 hFE hFE hFE - VCE = 1 V, - IC = 500 mA all groups hFE 2 Collector-Emitter saturation voltage - Kollektor-Emitter-Sattigungsspg. ) - IC = 500 mA, - IB = 50 mA 1 2 - VCEsat Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% (c) Diotec Semiconductor AG http://www.diotec.com/ 1 BC807W / BC808W Characteristics (Tj = 25C) Kennwerte (Tj = 25C) Min. Typ. Max. - VBE - - 1.2 V - ICB0 - ICB0 - - - - 100 nA 5 A - IEB0 - - 100 nA fT - 80 MHz - CCBO - - 10 pF Base-Emitter-voltage - Basis-Emitter-Spannung 2) - VCE = 1 V, - IC = 500 mA Collector-Base cutoff current - Kollektor-Basis-Reststrom - VCB = 20 V, (E open) - VCB = 20 V, Tj = 150C, (E open) Emitter-Base cutoff current - Emitter-Basis-Reststrom - VEB = 5 V, (C open) Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 50 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE =ie = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft < 625 K/W 1) RthA Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren BC817W / BC818W Marking of available current gain groups per type BC807-16 = 5A or 5CR BC808-16 = 5E or 5CR Stempelung der lieferbaren Stromverstarkungsgruppen pro BC807-25 = 5B or 5CS BC808-25 = 5F or 5CS Typ BC807-40 = 5C or 5CT BC808-40 = 5G or 5CT 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] Power dissipation versus ambient temperature ) Verlustleistung in Abh. von d. Umgebungstemp.1) 1 2 1 2 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG