BC807W / BC808W
BC807W / BC808W
PNP Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage PNP
Version 2010-05-21
Dimensions - Maße [mm]
1 = B 2 = E 3 = C
Power dissipation – Verlustleistung 200 mW
Plastic case
Kunststoffgehäuse
SOT-323
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C)
BC807W BC808W
Collector-Emitter-volt. – Kollektor-Emitter-Spannung E-B short - VCES 50 V 30 V
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open - VCEO 45 V 25 V
Emitter-Base-voltage – Emitter-Basis-Spannung C open - VEBO 5 V
Power dissipation – Verlustleistung Ptot 200 mW 1)
Collector current – Kollektorstrom (dc) - IC500 mA
Peak Collector current – Kollektor-Spitzenstrom - ICM 1 A
Peak Emitter current – Emitter-Spitzenstrom IEM 1 A
Peak Base current – Basis-Spitzenstrom - IBM 200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- VCE = 1 V, - IC = 100 mA Group -16
Group -25
Group -40
hFE
hFE
hFE
100
160
250
–
–
–
250
400
600
- VCE = 1 V, - IC = 500 mA all groups hFE 40 – –
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)
- IC = 500 mA, - IB = 50 mA - VCEsat – – 0.7 V
1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG http://www.diotec.com/ 1
1.3
0.3
1.25
±0.1
1
±0.1
2
±0.1
2.1
±0.1
Type
Code
3
21
BC807W / BC808W
Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C)
Min. Typ. Max.
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
- VCE = 1 V, - IC = 500 mA - VBE – – 1.2 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 20 V, (E open)
- VCB = 20 V, Tj = 150°C, (E open)
- ICB0
- ICB0
–
–
–
–
100 nA
5 µA
Emitter-Base cutoff current – Emitter-Basis-Reststrom
- VEB = 5 V, (C open) - IEB0 – – 100 nA
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 50 MHz fT– 80 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz CCBO – – 10 pF
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA < 625 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren BC817W / BC818W
Marking of available current gain groups per type
Stempelung der lieferbaren Stromverstärkungsgruppen pro
Typ
BC807-16 = 5A or 5CR
BC807-25 = 5B or 5CS
BC807-40 = 5C or 5CT
BC808-16 = 5E or 5CR
BC808-25 = 5F or 5CS
BC808-40 = 5G or 5CT
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2http://www.diotec.com/ © Diotec Semiconductor AG
[%]
P
tot
120
100
80
60
40
20
0
[°C]
T
A
150100
50
0
Power dissipation versus ambient temperature )
Verlustleistung in Abh. von d. Umgebungstemp. )
1
1
