SILICON PLANAR BSX20 EPITAXIAL TRANSISTORS NPN TO-18 APPLICATIONS High Speed Saturated Switching Applications ABSOLUTE MAXIMUM RATINGS {DESCRIPTION SYMBOL VALUE UNIT | Collector -Base Voltage VCBO 40 Vv Collector -Emitter Voltage VCES 40 Vv Collector -Emitter Voltage VCEO 15 Vv Emitter -Base Voltage VEBO 4.5 Vv Collector Peak Current (t=10us) ICM 0.5 A Power Dissipation@ Ta=25 degC Ptot 0.36 WwW @Tc=25 deg C 1.20 W Operating And Storage Junction Tj, Tstg -65 to +200 deg C Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 146 deg C/W Junction to Ambient Rth(j-a) 486 deg C/W ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) {DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT | Collector-Cut off Current ICBO VCB=20V, IE=0 - 400 nA VCB=20V, IE=0, Ta=150 deg C - 30 uA ICES VCE=15V, VBE=0, Ta=55 deg C - 400 nA VCE=40V, VBE=0 - 1.0 uA ICEX VCE=15V, VBE=-3V , Ta=55 deg C - 600 nA Emitter-Cut off Current IEBO VEB=4.5V, IC=0 - 10 uA Base-Cut off Current IBEX VCE=15V, VBE=-3V , Ta=55 deg C - 600 nA Collector -Emitter (sus) Voltage VCER (sus)* IC=10mA, RBE=10 ohms 20 - Collector -Emitter Voltage VCEO* IC=10mA, IB=0 15 - V Collector Emitter Saturation Voltage VCE(Sat)* = IC=10mA,IB=1mA - 0.25 Vv IC=100mA,iB=10mMA - 0.60 Vv IC=10mA,IB=0.3mMA - 0.30 Vv Base Emitter on Voltage VBE(on) IC=30uA, VCE=20V, Ta=100deg C 0.35 - Vv Base Emitter Saturation Voltage VBE(Sat)* IC=10mA,!IB=1mA 0.70 0.85 V IC=100mA,iB=10mMA - 1.50 Vv DC Current hFE* IC=10mA, VCE=1V 40 120 IC=100mA, VCE=2V 20 - IC=10mA, VCE=1V, Ta= -55 deg C 20 - contd...2ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) BSX20 [DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT | Transition Frequency ft VCE=10V,IC=10mA 500 - MHZ Emitter Base Capacitance Cebo IC=0, VEB=1V - 4.5 pF Collector Base Capacitance Cho IE=0, VCB=5V - 4.0 pF Storage Time ts IC=10mA, VCC=10V - 13 ns 1B1=-IB2=10mA Turn-on Time ton IC=10mA, VCC=3V, IB1=3mA - 12 ns IC=100mA, VCC=6V, IB1=40mA - 7.0 ns Turn-off Time toff IC=10mA, VCC=3V - 18 ns 1B1=3mA, IB2= -1.5mA IC=100mA, VCC=6V - 21 ns *Pulsed : Pulse duration=300us, duty cycle=T% 08042000NK/SG IB1=40mA, IB2= -20mA