PUMH10,115 - NXP - Pdf.Support

1. Product profile

1.1 General description

NPN/NPN Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)

plastic packages.

1.2 Features and benefits

1.3 Applications

Low current peripheral driver

Control of IC inputs

Replaces general-purpose transistors in digital applications

1.4 Quick reference data

PEMH10; PUMH10

NPN/NPN resistor-equipped transistors;

R1 = 2.2 k, R2 = 47k

Rev. 3 — 20 December 2011 Product data sheet

Table 1. Product overview

Type number Package NPN/PNP

complement PNP/PNP

complement Package

configuration

NXP JEITA

PEMH10 SOT666 - PEMD10 PEMB10 ultra small and flat lead

PUMH10 SOT363 SC-88 PUMD10 PUMB10 very small

100 mA output current capability Reduces component count

Built-in bias resistors Reduces pick and place costs

Simplifies circuit design AEC-Q101 qualified

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transis tor

VCEO collector-emitter voltage open base - - 50 V

IOoutput current - - 100 mA

R1 bias resistor 1 (input) 1.54 2.20 2.86 k

R2/R1 bias resistor ratio 17 21 26

Product data sheet Rev. 3 — 20 December 2011 2 of 15

NXP Semiconductors PEMH10; PUMH10

NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

2. Pinning information

3. Ordering information

4. Marking

[1] * = placeholder for manufacturing site code.

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

1 GND (emitter) TR1

2 input (base) TR1

3 output (collector) TR2

4 GND (emitter) TR2

5 input (base) TR2

6 output (collector) TR1

001aab555

6 45

1 32

65 4

123

TR1 TR2

R2 R1

sym063

Table 4. Orderin g information

Type number Package

Name Description Version

PEMH10 - plastic surface-mounted package; 6 leads SOT666

PUMH10 SC-88 plastic surface-mounted package; 6 leads SOT363

Table 5. Marking codes

Type number Marking code[1]

PEMH10 10

PUMH10 H*0

Product data sheet Rev. 3 — 20 December 2011 3 of 15

NXP Semiconductors PEMH10; PUMH10

NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Reflow soldering is the only recommended soldering method.

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transis tor

VCBO collector-base voltage open emitter - 50 V

VCEO collector-emitter voltage open base - 50 V

VEBO emitter-base voltage open collector - 5 V

VIinput voltage

positive - +12 V

negative - 5V

IOoutput current - 100 mA

ICM peak collector current - 100 mA

Ptot total power dissipation Tamb 25 C[1]

PEMH10 (SOT666) [2] -200mW

PUMH10 (SOT363) - 200 mW

Per device

Ptot total power dissipation Tamb 25 C[1]

PEMH10 (SOT666) [2] -300mW

PUMH10 (SOT363) - 300 mW

Tjjunction temperature - 150 C

Tamb ambient temperature 65 +150 C

Tstg storage temperature 65 +150 C

Product data sheet Rev. 3 — 20 December 2011 4 of 15

NXP Semiconductors PEMH10; PUMH10

NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

SOT363 and SOT666; FR4 PCB, standard footprint

Fig 1. Per device: Power derating curve

Tamb (°C)

-75 17512525 75-25

006aac749

200

100

300

400

Ptot

(mW)

Table 7. Thermal characteris tics

Symbol Parameter Conditions Min Typ Max Unit

Per transis tor

Rth(j-a) thermal resistance from

junction to ambient in free air [1]

PEMH10 (SOT666) [2] --625K/W

PUMH10 (SOT363) - - 625 K/W

Per device

Rth(j-a) thermal resistance from

junction to ambient in free air [1]

PEMH10 (SOT666) [2] --417K/W

PUMH10 (SOT363) - - 417 K/W

Product data sheet Rev. 3 — 20 December 2011 5 of 15

NXP Semiconductors PEMH10; PUMH10

NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for

PEMH10 (SOT666); typical values

FR4 PCB, standard footprint

Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for

PUMH10 (SOT363); typical values

006aac751

10-5 1010-2

10-4 102

10-1 tp (s)

10-3 103

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75 0.5

0.33 0.2

0.1

0.05

0.02 0.01

006aac750

10-5 1010-2

10-4 102

10-1 tp (s)

10-3 103

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75 0.5

0.33

0.2

0.1 0.05

0.02 0.01

Product data sheet Rev. 3 — 20 December 2011 6 of 15

NXP Semiconductors PEMH10; PUMH10

NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

7. Characteristics

[1] Characteristics of built-in transistor.

Table 8. Characteristics

Tamb =25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per transis tor

ICBO collector-base

cut-off current VCB =50V; I

E= 0 A - - 100 nA

ICEO collector-emitter

cut-off current VCE =30V; I

B= 0 A - - 100 nA

VCE =30V; I

B=0A;

Tj= 150 C--5A

IEBO emitter-base

cut-off current VEB =5V; I

C= 0 A - - 180 A

hFE DC current gain VCE =5V; I

C= 10 mA 100 - -

VCEsat collector-emitter

saturation voltage IC=5mA; I

B= 0.25 mA - - 100 mV

VI(off) off-state input

voltage VCE =5V; I

C=100A-0.60.5V

VI(on) on-state input

voltage VCE = 0.3 V; IC=5mA 1.1 0.75 - V

R1 bias resistor 1 (inp u t) 1.54 2.20 2.86 k

R2/R1 bias resistor ratio 17 21 26

Cccollector capacitance VCB =10V; I

E=i

e=0A;

f=1MHz --2.5pF

fTtransition frequency VCB =5V; I

C=10mA;

f = 100 MHz [1] - 230 - MHz

Product data sheet Rev. 3 — 20 December 2011 7 of 15

NXP Semiconductors PEMH10; PUMH10

NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

VCE =5V

(1) Tamb = 100 C

(2) Tamb =25C

(3) Tamb =40 C

IC/IB=20

(1) Tamb = 100 C

(2) Tamb =25C

(3) Tamb =40 C

Fig 4. DC current gain as a function of collector

current; typical values Fig 5. Collector- emitter saturatio n voltage as a

function of collector current; typical values

VCE =0.3V

(1) Tamb =40 C

(2) Tamb =25C

(3) Tamb = 100 C

VCE =5V

(1) Tamb =40 C

(2) Tamb =25C

(3) Tamb = 100 C

Fig 6. On-state input voltage as a function of

collector current; typical valu es Fig 7. Off-state input voltage as a function of

collector current; typical values

IC (mA)

10-1 102

101

006aac805

102

103

hFE

(1)

(2)

(3)

006aac810

IC (mA)

10-1 102

101

10-1

VCEsat

(V)

10-2

(1)

(2)

(3)

006aac811

IC (mA)

10-1 102

101

VI(on)

(V)

10-1

(1)

(2)

(3)

006aac812

IC (mA)

10-1 101

VI(off)

(V)

10-1

(1)

(2)

(3)

Product data sheet Rev. 3 — 20 December 2011 8 of 15

NXP Semiconductors PEMH10; PUMH10

NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

f = 1 MHz; Tamb =25CV

CE =5V; T

amb =25C

Fig 8. Collector capacitance as a function of

collector-base voltage; typical values Fig 9. Transition frequency as a function of collector

current; typical values of built-in transistor

VCB (V)

0504020 3010

006aac813

(pF)

006aac757

IC (mA)

10-1 102

101

102

103

(MHz)

Product data sheet Rev. 3 — 20 December 2011 9 of 15

NXP Semiconductors PEMH10; PUMH10

NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

9. Package outline

Fig 10. Package outline PEMH10 (SOT666)

Fig 11. Package outline PUMH10 (SOT363/SC-88)

Dimensions in mm 04-11-08

1.7

1.5

1.7

1.5

1.3

1.1

0.18

0.08

0.27

0.17

0.5

pin 1 index

123

456

0.6

0.5

0.3

0.1

06-03-16Dimensions in mm

0.25

0.10

0.3

0.2

pin 1

index

1.3

0.65

2.2

2.0 1.35

1.15

2.2

1.8 1.1

0.8

0.45

0.15

132

465

Product data sheet Rev. 3 — 20 December 2011 10 of 15

NXP Semiconductors PEMH10; PUMH10

NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

[2] T1: normal taping

[3] T2: reverse taping

11. Soldering

Table 9. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

3000 4000 8000 10000

PEMH10 SOT666 2 mm pitch, 8 mm tape and reel - - -315 -

4 mm pitch, 8 mm tape and reel - -115 - -

PUMH10 SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135

4 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165

Reflow soldering is the only recommended soldering method.

Fig 12. Reflow soldering footprint PEMH10 (SOT666)

solder lands

placement area

occupied area

solder paste

sot666_fr

2.75

2.45

2.1

1.6

0.4

(6×)

0.55

(2×)

0.25

(2×)

0.6

(2×)

0.65

(2×)

0.3

(2×)

0.325

(4×)

0.45

(4×)

0.5

(4×)

0.375

(4×)

1.72

1.7

1.0750.538

Dimensions in mm

Product data sheet Rev. 3 — 20 December 2011 11 of 15

NXP Semiconductors PEMH10; PUMH10

NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

Fig 13. Reflow soldering footprint PUMH10 (SOT363/SC-88)

Fig 14. Wave soldering footprint PUMH10 (SOT363/SC-88)

solder lands

solder resist

occupied area

solder paste

sot363_fr

2.65

2.35 0.4 (2×)

0.6

(2×)

0.5

(4×)

0.5

(4×)

0.6

(4×)

0.6

(4×)

1.5

1.8

Dimensions in mm

sot363_fw

solder lands

solder resist

occupied area

preferred transport

direction during soldering

5.3

1.3 1.3

1.5

0.3

1.5

4.5

2.45

2.5

Dimensions in mm

Product data sheet Rev. 3 — 20 December 2011 12 of 15

NXP Semiconductors PEMH10; PUMH10

NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PEMH10_ PUMH10 v.3 20111220 Product data sheet - PEMH10_ PUMH10 v.2

Modifications: •The format of this document has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

•Section 1 “Product profile”: updated

•Section 4 “Marking”: updated

•Table 7 “Thermal characteristics”: updated according to the latest measurements

•Table 8 “Characteristics”: ICEO upd ated according to the latest measurements, fT added,

Vi(off) redefined to VI(off) off-state input voltage, Vi(on) redefined to VI(on) on-state input

voltage.

•Figure 1 to 9: added

•Section 8 “Test information”: added

•Figure 10 and 11: replaced by minimized package outline drawings

•Section 10 “Packing information”: added

•Section 11 “Soldering”: added

•Section 13 “Legal information”: updated

PEMH10_ PUMH10 v.2 20031020 Product data sheet - PEMH10 v.1

PUMH10 v.1

PEMH10 v.1 20011022 Preliminary specification - -

PUMH10 v.1 20000801 Product specification -

Product data sheet Rev. 3 — 20 December 2011 13 of 15

NXP Semiconductors PEMH10; PUMH10

NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short dat a sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specificatio n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those descri bed in the

Product data sheet.

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Limited warr a nty and liability — Information in this document is believed to

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Notwithstanding any damages that customer might incur for any reason

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limitation specifications and product descriptions, at any time and with out

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malfunction of an NXP Semiconductors product can reasonably be expected

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risk.

Applications — Applications that are described herein for any of these

products are for il lustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or cu stomer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

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damage, costs or problem which is based on any weakness or default in the

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customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

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products are sold subject to the general terms and conditions of commercial

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conveyance or implication of any license under any copyri ghts, patent s or

other industrial or intellectual property rights.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 3 — 20 December 2011 14 of 15

NXP Semiconductors PEMH10; PUMH10

NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PEMH10; PUMH10

NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 20 December 2011

Document identifier: PEMH10_PUMH10

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 8

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Packing information . . . . . . . . . . . . . . . . . . . . 10

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

14 Contact information. . . . . . . . . . . . . . . . . . . . . 14

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15