VISHAY
BAS70 to BAS70-06
Document Number 85702
Rev. 1.5, 08-Jul-04
Vishay Semiconductors
www.vishay.com
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Top View
Top View
BAS70-05 BAS70-06
BAS70-04BAS70
Small Signal Schottky Diodes, Single & Dual
Features
• These diodes feature very low turn-on voltage and
fast switching.
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges.
Mechanical Da ta
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Device on fiberglass substrate, see layout on next page
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Device on fiberglass substrate, see layout on next page
Part O rdering code Marking Remarks
BAS70 BAS70-GS18 or BAS70-GS08 73 Tape and Reel
BAS70-04 BAS70-04-GS18 or BAS70-04-GS08 74 Tape and Reel
BAS70-05 BAS70-05-GS18 or BAS70-05-GS08 75 Tape and Reel
BAS70-06 BAS70-06-GS18 or BAS70-06-GS08 76 Tape and Reel
Parameter Test condition Symbol Value Unit
Repetitive peak reverse voltage VRRM = VRWM = VR70 V
Forw ard contin uous current Tamb = 25 °C IF2001) mA
Surge forward current tp < 1 s, Tamb = 25 °C IFSM 6001) mA
Power dissipation1) Tamb = 25 °C Ptot 2001) mW
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambient air RthJA 4301) °C
Junction temperature Tj150 °C
Storage temperature range TS- 55 to +150 °C
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2Document Number 85702
Rev. 1.5, 08-Jul-04
VISHAY
BAS70 to BAS70-06
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
1) Pulse test; tp ≤ 300 µs
Layout for RthJA test
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
Parameter Test condition Symbol Min Typ. Max Unit
Reverse breakdown voltage IR = 10 µA (pulsed) V(BR) 70 V
Leakage current VR = 50 V IR20 100 nA
Forward voltage IF = 1.0 mA VF410 mV
Forward voltage1) IF = 15 mA, VF1000 mV
Diode capacitance VR = 0 V, f = 1 MHz Ctot 1.5 2 pF
Reverse recovery time IF = 10 mA, IR = 10 mA,
Irr = 1 mA, RL = 100 Ωtrr 5ns
17451
15 (0.59)
12 (0.47)
0.8 (0.03)
5 (0.2)
7.5 (0.3)
3 (0.12)
1 (0.4)
1 (0.4)
2 (0.8)
2 (0.8)
1.5 (0.06)
5.1 (0.2)
VISHAY
BAS70 to BAS70-06
Document Number 85702
Rev. 1.5, 08-Jul-04
Vishay Semiconductors
www.vishay.com
3
Package Dimensions in mm (Inches)
2.0 (0.079)
0.9 (0.035)
0.95 (0.037)0.95 (0.037)
0.52 (0.020)
12
3
17418
2.8 (.110)
3.1 (.122)
0.4 (.016)
0.95 (.037)0.95 (.037)
0.1 (.004) max.
1.20(.047)
1.43 (.056)
0.4 (.016)0.4 (.016)
0.098 (.005)
0.175 (.007)
0.95 (.037)
1.15 (.045)
2.35 (.092)
2.6 (.102)
ISO Method E
Mounting Pad Layout
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4Document Number 85702
Rev. 1.5, 08-Jul-04
VISHAY
BAS70 to BAS70-06
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
