Rev.3.00 Apr 18, 2005 page 1 of 4
1SS83
Silicon Epitaxial Planar Diode for High Voltage Switching
REJ03G0563-0300
(Previous: ADE-208-150B)
Rev.3.00
Apr 18, 2005
Features
High reverse voltage. (VR = 250 V)
High reliability with glass seal.
Ordering Information
Type No.
Cathode band
2nd band
3rd band
Package Name
Package Code
(Previous Code)
1SS83 Verdure Light Blue Light Blue DO-35 GRZZ0002ZB-A
(DO-35)
Pin Arrangement
12
Cathode band
2nd band
1. Cathode
2. Anode
3rd band
1SS83
Rev.3.00 Apr 18, 2005 page 2 of 4
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Peak reverse voltage VRM *1 300 V
Reverse voltage VR 250 V
Average rectified current IO 200 mA
Peak forward current IFM 625 mA
Non-Repetitive peak forward surge current IFSM *2 1 A
Power dissipation Pd 400 mW
Junction temperature Tj 175 °C
Storage temperature Tstg 65 to +175 °C
Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic.
2. Within 1s forward surge current.
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
IR1200 nA VR = 250 V Reverse current
IR2100 µA VR = 300 V
Forward voltage VF1.0 V IF = 100 mA
Capacitance C 1.5 pF VR = 0 V, f = 1 MHz
Reverse recovery time trr100 ns IF = IR = 30 mA, Irr = 3 mA, RL = 100
1SS83
Rev.3.00 Apr 18, 2005 page 3 of 4
Main Characteristic
1.0 10
10
1.0
0.1 100
f = 1MHz
050 200150 250100 300
Ta = 25°C
Ta = 75°C
Ta = 50°C
Ta = -25
°
C
Ta = 25
°C
Ta = 125
°C
Ta = 75
°
C
0 0.2 0.80.6 1.00.4 1.2
10
-1
10
-2
10
-3
10
-4
Fig.1 Forward current vs. Forward voltage
Forward voltage V
F
(V)
Forward current I
F
(A)
10
-5
10
-6
10
-7
10
-8
10
-9
Reverse current I
R
(A)
Fig.2 Reverse current vs. Reverse voltage
Reverse voltage V
R
(V)
Fig.3 Capacitance vs. Reverse voltage
Reverse voltage V
R
(V)
Capacitance C (pF)
1SS83
Rev.3.00 Apr 18, 2005 page 4 of 4
Package Dimensions
LEL
Min Nom Max
φb-0.5
φD-2.0
E--4.2
L26.0 - -
-
-
φbφD
Dimension in Millimeters
Reference
Symbol
SC-40 0.13g
MASS[Typ.]
DO-35 / DO-35VGRZZ0002ZB-A
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