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The RF MOSFET Line: Broadband Power FET
4W, to 500MHz, 28V M/A-COM Products
Released - Rev. 07.07
MRF160
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and prod uct information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Designed primarily for wideband large–s ignal output and
driver from 30–500 MHz.
N–Channel enhancement mode MOSFET
• Guaranteed 28 V, 500 MHz performance
Output power = 4.0 W
Gain = 16 dB (min.)
Efficiency = 55% (t yp.)
• Excellent thermal stability, ideally suited for Class A op eration
• Facilitates manual gain control, ALC and modulation techniques
• 100% Tested for load mismat ch at all phase angles with 30:1 VSWR
• Low Crss – 0.8 pF Typical at VDS = 28 V
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