Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current VCES 1200 V T C = 80 C IC,nom. 15 A T C = 25 C IC 35 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, T C = 80C ICRM 30 A Gesamt-Verlustleistung total power dissipation T C=25C, Transistor Ptot 145 W VGES +/- 20V V IF 15 A IFRM 30 A I2t 93 A2s VISOL 2,5 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, T Vj = 125C Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. Charakteristische Werte / Characteristic values min. typ. max. - 2,1 2,6 V - 2,4 2,9 V VGE(th) 4,5 5,5 6,5 V Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage IC = 15A, VGE = 15V, Tvj = 25C VCE sat IC = 15A, VGE = 15V, Tvj = 125C Gate-Schwellenspannung gate threshold voltage IC = 0,6mA, VCE = VGE, T vj = 25C Gateladung gate charge VGE = -15V...+15V QG - 0,16 - C Eingangskapazitat input capacitance f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cies - 1 - nF Ruckwirkungskapazitat reverse transfer capacitance f = 1MHz,Tvj = 25C,VCE = 25V, VGE = 0V Cres - 0,07 - nF VCE = 1200V, VGE = 0V, Tvj = 25C ICES - 2 76 A - 200 - A - - 400 nA Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 1200V, VGE = 0V, Tvj = 125C Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25C prepared by: Mark Munzer date of publication: 09.09.1999 approved by: M. Hierholzer revision: 2 1(8) http://store.iiic.cc/ IGES Seriendatenblatt_BSM15GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Charakteristische Werte / Characteristic values min. Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) VGE = 15V, RG = 56, T vj = 25C td,on VGE = 15V, RG = 56, T vj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 15A, VCC = 600V Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 15A, VCC = 600V VGE = 15V, RG = 56, T vj = 25C tr VGE = 15V, RG = 56, T vj = 125C VGE = 15V, RG = 56, T vj = 25C td,off VGE = 15V, RG = 56, T vj = 125C Fallzeit (induktive Last) fall time (inductive load) VGE = 15V, RG = 56, T vj = 25C Einschaltverlustenergie pro Puls turn-on energy loss per pulse IC = 15A, VCC = 600V, VGE = 15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC = 15A, VCC = 600V, VGE = 15V RG = 56, T vj = 125C, LS = 140nH RG = 56, T vj = 125C, LS = 140nH - 0,07 - s - 0,08 - s - 0,05 - s - 0,05 - s - 0,3 - s - 0,34 - s tf - 0,03 - s - 0,05 - s Eon - 2 - mWs Eoff - 1,5 - mWs ISC - 130 - A LsCE - 60 - nH RCC`+EE` - 5,9 - m min. typ. max. - 1,8 2,3 V - 1,7 2,2 V - 14 - A - 18 - A - 1,5 - As - 3,4 - As - 0,6 - mWs - 1,3 - mWs tP 10sec, VGE 15V, RG = 56 T Vj125C, VCC=900V, VCEmax=VCES -LsCE *dI/dt Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip max. IC = 15A, VCC = 600V VGE = 15V, RG = 56, T vj = 125C Kurzschluverhalten SC Data typ. IC = 15A, VCC = 600V T C=25C Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 15A, VGE = 0V, Tvj = 25C VF IF = 15A, VGE = 0V, Tvj = 125C IF = 15A, - diF/dt = 380A/sec VR = 600V, VGE = -15V, Tvj = 25C IRM VR = 600V, VGE = -15V, Tvj = 125C Sperrverzogerungsladung recovered charge IF = 15A, - diF/dt = 380A/sec VR = 600V, VGE = -15V, Tvj = 25C Qr VR = 600V, VGE = -15V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 15A, - diF/dt = 380A/sec VR = 600V, VGE = -15V, Tvj = 25C VR = 600V, VGE = -15V, Tvj = 125C 2(8) http://store.iiic.cc/ Erec Seriendatenblatt_BSM15GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,86 K/W - - 1,50 K/W RthCK - 0,02 - K/W Hochstzulassige Sperrschichttemperatur maximum junction temperature T vj - - 150 C Betriebstemperatur operation temperature T op -40 - 125 C Lagertemperatur storage temperature T stg -40 - 150 C 6 Nm Innerer Warmewiderstand thermal resistance, junction to case Transistor / transistor, DC Ubergangs-Warmewiderstand thermal resistance, case to heatsink pro Modul / per module Paste = 1 W/m * K / grease = 1 W/m * K RthJC Diode/Diode, DC Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation AL2O3 CTI comperative tracking index 225 terminals M5 Anzugsdrehmoment f. mech. Befestigung mounting torque M1 3 M2 Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight G Nm 180 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) http://store.iiic.cc/ Seriendatenblatt_BSM15GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) VGE = 15V 30 25 Tj = 25C Tj = 125C IC [A] 20 15 10 5 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) IC = f (VCE) Tvj = 125C 30 25 VGE = 17V VGE = 15V VGE = 13V VGE = 11V 20 IC [A] VGE = 9V VGE = 7V 15 10 5 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) http://store.iiic.cc/ Seriendatenblatt_BSM15GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Ubertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 30 25 Tj = 25C Tj = 125C IC [A] 20 15 10 5 0 5 6 7 8 9 10 11 12 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) IF = f (VF) 30 25 Tj = 25C Tj = 125C IF [A] 20 15 10 5 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) http://store.iiic.cc/ Seriendatenblatt_BSM15GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=15V, Rgon = Rgoff =56 , VCE = 600V, Tj = 125C 6 Eoff 5 Eon Erec E [mJ] 4 3 2 1 0 0 5 10 15 20 25 30 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=15V , IC = 15A , VCE = 600V , Tj = 125C 9 Eoff 7,5 Eon Erec E [mJ] 6 4,5 3 1,5 0 0 60 120 180 240 300 360 420 480 RG [ ] 6(8) http://store.iiic.cc/ Seriendatenblatt_BSM15GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) 10 ZthJC [K / W] 1 Zth:Diode Zth:IGBT 0,1 0,01 0,001 0,01 0,1 1 10 100 t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec] : Diode 1 2 3 4 388 326,8 118,7 26,5 0,048 0,049 0,055 1,149 164,3 438,7 778,6 118,4 0,003 0,018 0,043 0,312 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) VGE = 15V, Rg = 56 Ohm, Tvj= 125C 35 30 IC [A] 25 IC,Modul 20 IC,Chip 15 10 5 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7(8) http://store.iiic.cc/ Seriendatenblatt_BSM15GD120DLC-E3224.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM15GD120DLC E3224 8(8) http://store.iiic.cc/ Seriendatenblatt_BSM15GD120DLC-E3224.xls Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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