© Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 9
1Publication Order Number:
MMBTA92LT1/D
MMBTA92L, SMMBTA92L,
MMBTA93L
High Voltage Transistors
PNP Silicon
Features
AECQ101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol 92 93 Unit
CollectorEmitter Voltage VCEO 300 200 Vdc
CollectorBase Voltage VCBO 300 200 Vdc
EmitterBase Voltage VEBO 5.0 5.0 Vdc
Collector Current — Continuous IC500 mAdc
DEVICE MARKING
MMBTA92L, SMMBTA92L = 2D; MMBTA93LT1 = 2E
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient RqJA 556 °C/W
Total Device Dissipation (Note 2)
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance, Junction to Ambient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
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Device Package Shipping
ORDERING INFORMATION
MMBTA92LT1G SOT23
(PbFree)
SOT23 (TO236AF)
CASE 318
STYLE 6
3000 / Tape & Reel
MARKING
DIAGRAM
2x MG
G
2x = Specific Device Code
M = Date Code*
G= PbFree Package
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
MMBTA92LT3G SOT23
(PbFree)
10000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(*Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
MMBTA93LT1G SOT23
(PbFree)
3000 / Tape & Reel
SMMBTA92LT1G SOT23
(PbFree)
3000 / Tape & Reel
SMMBTA92LT3G SOT23
(PbFree)
10000 / Tape & Reel
MMBTA92L, SMMBTA92L, MMBTA93L
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0) MMBTA92, SMMBTA92
MMBTA93
V(BR)CEO
300
200
Vdc
CollectorBase Breakdown Voltage
(IC = 100 mAdc, IE = 0) MMBTA92, SMMBTA92
MMBTA93
V(BR)CBO
300
200
Vdc
EmitterBase Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO 5.0 Vdc
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0) MMBTA92, SMMBTA92
(VCB = 160 Vdc, IE = 0) MMBTA93
ICBO
0.25
0.25
mAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO 0.1 mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc) Both Types
(IC = 10 mAdc, VCE = 10 Vdc) Both Types
(IC = 30 mAdc, VCE = 10 Vdc) MMBTA92, SMMBTA92
MMBTA93
hFE
25
40
25
25
CollectorEmitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc) MMBTA92, SMMBTA92
MMBTA93
VCE(sat)
0.5
0.5
Vdc
BaseEmitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VBE(sat) 0.9 Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT50 MHz
CollectorBase Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) MMBTA92, SMMBTA92
MMBTA93
Ccb
6.0
8.0
pF
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
300
0.1 1.0 10
250
200
150
0
hFE, DC CURRENT GAIN
TJ = +125°C
25°C
-55°C
VCE = 10 Vdc
100
50
100
MMBTA92L, SMMBTA92L, MMBTA93L
http://onsemi.com
3
Figure 2. Capacitance
IC, COLLECTOR CURRENT (mA)
150
90
70
50
30
10
TJ = 25°C
VCE = 20 Vdc
F = 20 MHz
f, CURRENT-GAIN — BANDWIDTH (MHz)
T
1
Figure 3. CurrentGain Bandwidth
130
21
C, CAPACITANCE (pF)
VR, REVERSE VOLTAGE (VOLTS)
0.1
100
0.1
10
1.0 10 1000
Cib @ 1MHz
100
1.0
Ccb @ 1MHz
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.4
0.0
1.2
1.0
0.8
0.6
0.4
0.2
100100.1 1.0
110
3579 1917151311
VBE(on) @ 25°C, VCE = 10 V
VCE(sat) @ 25°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ -55°C, IC/IB = 10
VBE(sat) @ 125°C, IC/IB = 10
VBE(sat) @ -55°C, IC/IB = 10
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ -55°C, VCE = 10 V
Figure 4. “ON” Voltages
Figure 5. Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (V)
1000101
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
10 ms
1.0 s
1
100
MMBTA92L, SMMBTA92L, MMBTA93L
http://onsemi.com
4
PACKAGE DIMENSIONS
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOT23 (TO236)
CASE 31808
ISSUE AP
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q°°°°
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MMBTA29LT1/D
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