© 2018 IXYS CORPORATION, All Rights Reserved DS100457D(6/18)
IXFA26N50P3
IXFP26N50P3
IXFQ26N50P3
IXFH26N50P3
Polar3TM HiperFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 500 V
VDGR TJ= 25C to 150C, RGS = 1M500 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C 26 A
IDM TC= 25C, Pulse Width Limited by TJM 78 A
IATC= 25C13 A
EAS TC= 25C 300 mJ
dv/dt IS IDM, VDD VDSS, TJ 150°C 35 V/ns
PDTC= 25C 500 W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb
MdMounting Torque (TO-220, TO-3P & TO-247) 1.13 / 10 Nm/lb.in
Weight TO-263 2.5 g
TO-220 3.0 g
TO-3P 5.5 g
TO-247 6.0 g
VDSS = 500V
ID25 = 26A
RDS(on)
250m
Features
Fast Intrinsic Rectifier
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 500 V
VGS(th) VDS = VGS, ID = 4mA 3.0 5.0 V
IGSS VGS = 30V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS = 0V 25 A
TJ = 125C 750 A
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 250 m
G = Gate D = Drain
S = Source Tab = Drain
TO-247 (IXFH)
G
S
DD (Tab)
TO-3P (IXFQ)
D
G
SD (Tab)
TO-263 (IXFA)
G
D (Tab)
S
D (Tab)
S
GD
TO-220 (IXFP)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA26N50P3 IXFP26N50P3
IXFQ26N50P3 IXFH26N50P3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 14 23 S
RGi Gate Input Resistance 2.1
Ciss 2220 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 280 pF
Crss 8 pF
Co(er) 108 pF
Co(tr) 185 pF
td(on) 21 ns
tr 7 ns
td(off) 38 ns
tf 5 ns
Qg(on) 42 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 11 nC
Qgd 15 nC
RthJC 0.25 C/W
RthCS TO-220 0.50 C/W
TO-3P & TO-247 0.25 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3(External)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
ISVGS = 0V 26 A
ISM Repetitive, pulse Width Limited by TJM 104 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 250 ns
QRM 0.9 nC
IRM 10.2 A
IF = 13A, -di/dt = 100A/μs
VR = 100V
© 2018 IXYS CORPORATION, All Rights Reserved
IXFA26N50P3 IXFP26N50P3
IXFQ26N50P3 IXFH26N50P3
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
4
8
12
16
20
24
28
01234567
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
10
20
30
40
50
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0
4
8
12
16
20
24
28
0246810121416
V
DS
- Volts
I
D
- Amperes
4V
6V
5V
V
GS
= 10V
7V
Fig. 4. R
DS(on)
Normalized to I
D
= 13A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 26A
I
D
= 13A
Fig. 5. R
DS(on)
Normalized to I
D
= 13A Value vs.
Drain Current
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
3.8
0 5 10 15 20 25 30 35 40 45 50 55
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
4
8
12
16
20
24
28
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA26N50P3 IXFP26N50P3
IXFQ26N50P3 IXFH26N50P3
Fig. 7. Input Admittance
0
5
10
15
20
25
30
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125
o
C
25
o
C
- 40
o
C
Fig. 8. Transconductance
0
5
10
15
20
25
30
35
40
45
0 5 10 15 20 25 30
I
D
- Amperes
g
f s - Siemens
T
J
= - 40
o
C
125
o
C
25
o
C
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
10
20
30
40
50
60
70
80
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V
SD
- Volts
I
S
- Amperes
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 250V
I
D
= 13A
I
G
= 10mA
Fig. 11. Capacitance
1
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Output Capacitance Stored Energy
0
2
4
6
8
10
12
14
0 50 100 150 200 250 300 350 400 450 500
V
DS
- Volts
E
OSS
- MicroJoules
© 2018 IXYS CORPORATION, All Rights Reserved IXYS REF: F_26N50P3(W6) 5-19-17-B
IXFA26N50P3 IXFP26N50P3
IXFQ26N50P3 IXFH26N50P3
Fig. 14. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 13. Forward-Bias Safe Operating Area
0.1
1
10
100
10 100 1,000
V
DS
- Volts
I
D
- Am pe res
T
J
= 150
o
C
T
C
= 25
o
C
Sin
g
le Pulse
1ms
100μs
R
DS(on)
Limit 25μs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA26N50P3 IXFP26N50P3
IXFQ26N50P3 IXFH26N50P3
TO-247 Outline
1 - Gate
2,4 - Drain
3 - Source
TO-263 Outline
1 - Gate
2,4 - Drain
3 - Source
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
TO-3P Outline
1 - Gate
2,4 - Drain
3 - Source
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evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
